Abstract: An optical waveguide circuit substrate includes a circuit board and an optical waveguide structure disposed on a lower surface of the circuit board. A plurality of pads are disposed on an upper surface of the circuit board. The optical waveguide structure includes a first cladding layer, a second cladding layer, a core layer and a reflective layer. The core layer has an imprinted opening of which an aperture gradually increases from the first cladding layer to the second cladding layer. A first portion of the second cladding layer fills the imprinted opening and has a connection surface. The reflective layer is located between the core layer and the first portion, and an angle between the reflective layer and the connection surface is in a range from 44 degrees to 46 degrees. An orthographic projection of the reflective layer on the upper surface is located between the pads.

Abstract: Package structures and methods for forming the same are provided. The package structure includes an integrated circuit die and a package layer surrounding the integrated circuit die. The package structure also includes a redistribution structure over the package layer and electrically connected to the integrated circuit die. The redistribution structure includes a passivation layer and a conductive layer formed in the passivation layer. The integrated circuit die further includes a connector formed over the conductive layer and covered a top surface of the passivation layer. In addition, a bottom surface of the connector and a top surface of the connector are both wider than a neck portion of the connector.

Abstract: An electronic device with a fan assembly is disclosed. The fan assembly includes an impeller and an insert separated from the impeller by a gap. The fan assembly increases airflow by rotationally driving the impeller. For a sufficient rotational speed of the impeller, the airflow reaches a level that provides a force that displaces the insert. The displacement may include movement and/or compression of the insert. As a result of the displacement, the gap between the impeller and the insert increases. The increased gap reduces the pressure and associated noise that is otherwise caused by the airflow. When the rotational speed of the impeller reduces or ceases, the insert returns to its initial position. In this manner, the fan assembly includes a self-adjusting gap that changes based on the airflow.

Abstract: A transmission mechanism includes first and second transmission, first and second shafts, a clutch, and a one-way bearing. In the first gear, power is output through the first driving transmission and the one-way bearing; and in the second gear, the power is output through the clutch, the second driving transmission and the one-way bearing.

Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

Abstract: A polishing pad conditioning apparatus includes a base, a fiber, and a polymer protruding from a surface of the base and encompassing the fiber.

Abstract: Package structures and methods for forming the same are provided. The method includes forming a redistribution structure embedded in a passivation layer over a carrier substrate and bonding an integrated circuit die to the redistribution structure through first connectors. The method further includes removing the carrier substrate to expose a bottom portion of the redistribution structure and removing the bottom portion of the redistribution structure to form an opening in the passivation layer. The method further includes forming a second connector over the redistribution structure. In addition, the second connector includes an extending portion extending into the opening in the passivation layer.

Abstract: A touch panel includes a substrate, a touch sensing electrode, a peripheral conductive trace, a protective layer, and a conductive layer. The substrate has a display area and a peripheral area. The touch sensing electrode is disposed in the display area. The peripheral conductive trace is disposed in the peripheral area. The touch sensing electrode is electrically connected to the peripheral conductive trace. The touch sensing electrode and the peripheral conductive trace at least include metal nanowires. The protective layer is disposed on the touch sensing electrode, and the conductive layer is disposed on the peripheral conductive trace.

Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

Abstract: A transmission interface circuit includes a power supply port, a first power path, first data transmission path, second power path and controller. The first power port is coupled to the storage device to provide the storage device with power. The first data transmission path is coupled between the storage device and the electronic device to perform data transmission between the storage device and the electronic device. The second power port is coupled to the electronic device to provide the electronic device with power. The controller respectively control enables or disables the first power path, the second power path and the first data transmission path according to the information transmitted from the electronic device.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A touch panel stackup comprises a substrate having a substantially transparent first region and a substantially opaque second region, a sensing electrode detecting a tactile signal, a conductive circuit electrically coupled with the sensing electrode, and a masking element configured on the second region of the substrate, wherein the sensing electrode, the conductive circuit, and the masking element are integrally formed on the substrate.

Abstract: The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.

Abstract: An ultrasonic linear actuation device includes a mover and a plurality of stator sets. The mover includes at least one mover rack. The plurality of stator sets is located in correspondence with the mover. Each of the plurality of stator sets includes an actuating component and a plurality of stator racks. The actuating component is used for stimulating corresponding one of the plurality of stator sets to generate standing-wave oscillations in an oscillation direction, such that the plurality of stator racks of each of the plurality of stator sets can engage the at least one mover rack of the mover to allow the stator racks to mesh the corresponding mover rack and thus to displace the mover in a moving direction.

Abstract: Package structures and methods for forming the same are provided. The method includes forming a redistribution structure embedded in a passivation layer over a carrier substrate and bonding an integrated circuit die to the redistribution structure through first connectors. The method further includes removing the carrier substrate to expose a bottom portion of the redistribution structure and removing the bottom portion of the redistribution structure to form an opening in the passivation layer. The method further includes forming a second connector over the redistribution structure. In addition, the second connector includes an extending portion extending into the opening in the passivation layer.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A dual-shaft gearbox mechanism includes a hollow shaft motor, first and second gear sets, first and second shafts, a clutch and a unidirectional assembly. When the dual-shaft gearbox mechanism is in a first gear, power is outputted via the first gear set and the unidirectional assembly. When the dual-shaft gearbox mechanism is in a second gear, power is outputted via the clutch and the second gear set.