Abstract: A semiconductor structure includes an array of active patterns, a peripheral pattern around the array of active patterns, and at least a branch pattern connected to an inner edge of the peripheral pattern. The active patterns respectively extend along a first direction and are arranged end-to-end along the first direction and side-by-side along a second direction that is different form the first direction. The branch pattern extends along the first direction. An end portion of the branch pattern and an end portion of one of the active patterns that is immediately side-by-side next to the branch pattern are flush along the second direction.

Abstract: An aluminum battery packaging film includes a heat-sealing layer, wherein a material of the heat-sealing layer includes modified polyethylene terephthalate, polycarbonate, polyimide, or a combination thereof.

Abstract: A resonant energy stabilizer contains: a body, a lid, a mineral crystal, the current amplifier, and a medium frequency current device. The body includes an accommodation chamber. The lid includes an accommodating room. The mineral crystal includes a recess configured to accommodate a sapphire for producing far-infrared waves of electrostatic pulse. The recess is surrounded by a white crystal, a citrine and a green crystal which are surrounded by multiple titanium crystals, and a first magnetite is located above the white crystal, the citrine and the green crystal. The current amplifier includes multiple plasma pieces stacked together to increase a distance of the far-infrared waves of the electrostatic pulse, and each plasma piece has a copper coil layer, a red brass patch, and a red copper sheet. The medium frequency current device includes multiple second magnetites, an input segment, a central processing unit, a booster, and an output segment.

Abstract: A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, a third semiconductor element, and a fourth semiconductor element. A first terminal of the first semiconductor element receives a bias voltage. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to a first data node in the memory cell circuit. A second terminal of the third semiconductor element is adapted to receive a reference voltage. A control terminal of the third semiconductor element receives an inverted signal of the computing word-line. A first terminal of the fourth semiconductor element is coupled to a first computing bit-line. A second terminal of the fourth semiconductor element is coupled to a second computing bit-line.

Abstract: A command transforming method, applied to a command transforming system comprising a first transceiving interface and a second transceiving interface, comprising: receiving at least one command transmitted from a first device via the first transceiving interface; determining a first sequence rule of the first device and a second sequence rule of a second device, wherein the first sequence rule means if the first device is required to process the command in sequence and the second sequence rule means if the second device is required to process the command in sequence; transmitting the command to the second device via the second transceiving interface; processing the command by the second device according to the second sequence rule and transmitting a response corresponding to the command to the second transceiving interface by the second device; and transmitting the response to the first device according to the first sequence rule.

Abstract: A unit circuit constituting each stage of a shift register serving as a gate driver of a display device charges an internal node to an H level via a transistor T2 when an output signal G(n?4) of a preceding stage turns to the H level and sets the internal node to an L level via a transistor T3 when an output signal G(n+8) of a succeeding stage turns to the H level. Each of the unit circuits of last eight stages in the gate driver is provided with a transistor T4 including a gate terminal to which the signal G(n?4) is applied and a drain terminal connected to the internal node. A signal is applied to a source terminal of the transistor T4, the signal being at the H level during a period when the internal node of any of the last eight stages is to be set to the H level, and being the L level during the other periods. This suppresses a voltage fluctuation generated in the internal node when a stabilization circuit does not normally function.

Abstract: An artificial intelligence (AI)-based constrained random verification (CRV) method for a design under test (DUT) includes: receiving a series of constraints; obtaining a limited constraint range according to the series of constraints; generating a series of stimuli according to the limited constraint range; and verifying the DUT by the series of stimuli; wherein at least one of the step of obtaining the limited constraint range according to the series of constraints and the step of generating the series of stimuli according to the limited constraint range employs an AI algorithm.

Abstract: An optoelectronic package structure is provided. The optoelectronic package structure includes a carrier and a photonic component. The carrier includes an upper surface and a first lateral surface. The photonic component is disposed over an upper surface of the carrier and includes an optical portion. The carrier includes a recessed portion recessed from the first lateral surface of the carrier, and the optical portion of the photonic component is located within the recessed portion of the carrier from a top view perspective.

Abstract: A semiconductor device includes a substrate, a 2-D material channel layer, a 2-D material passivation layer, source/drain contacts, and a gate structure. The 2-D material channel layer is over the substrate, wherein the 2-D material channel layer is made of graphene. The 2-D material passivation layer is over the 2-D material channel layer, wherein the 2-D material passivation layer is made of transition metal dichalcogenide (TMD). The source/drain contacts are over the 2-D material passivation layer. The gate structure is over the 2-D material passivation layer and between the source/drain contacts.

Abstract: A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, and a third semiconductor element. A first terminal of the first semiconductor element is coupled to a first computing bit-line. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to the memory cell circuit. A first terminal of the second semiconductor element is coupled to a second terminal of the first semiconductor element. A first terminal of the third semiconductor element is coupled to a second terminal of the second semiconductor element. A second terminal of the third semiconductor element is coupled to a second computing bit-line. A control terminal of the third semiconductor element receives a bias voltage.

Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.

Abstract: A resonant energy stabilizer contains: a body, a lid, a mineral crystal, the current amplifier, and a medium frequency current device. The body includes an accommodation chamber. The lid includes an accommodating room. The mineral crystal includes a recess configured to accommodate a sapphire for producing far-infrared waves of electrostatic pulse. The recess is surrounded by a white crystal, a citrine and a green crystal which are surrounded by multiple titanium crystals, and a first magnetite is located above the white crystal, the citrine and the green crystal. The current amplifier includes multiple plasma pieces stacked together to increase a distance of the far-infrared waves of the electrostatic pulse, and each plasma piece has a copper coil layer, a red brass patch, and a red copper sheet. The medium frequency current device includes multiple second magnetites, an input segment, a central processing unit, a booster, and an output segment.

Abstract: A method is provided for fabricating a semiconductor wafer having a device side, a back side opposite the device side and an outer periphery edge. Suitably, the method includes: forming a top conducting layer on the device side of the semiconductor wafer; forming a passivation layer over the top conducting layer, the passivation layer being formed so as not to extend to the outer periphery edge of the semiconductor wafer; and forming a protective layer over the passivation layer, the protective layer being spin coated over the passivation layer so as to have a smooth top surface at least in a region proximate to the outer periphery edge of the semiconductor wafer.

Abstract: A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

Abstract: Example implementations relate to electrical traces on panels. In some examples, a display can include an on-cell touch (OCT) panel, a cover panel, and an electrical trace located on the cover panel, where the cover panel is a glass panel and the electrical trace is to transmit a signal from a component to a processor.

Abstract: Provided is a testing method including: disposing a wafer on a working platform of a testing device; and moving a circuit board of the testing device relative to the working platform by a movement assembly of the testing device so as to allow at least two testing ports of the circuit board to test two chips of the wafer, respectively. Further, the two testing ports have different testing functions. Therefore, during the wafer testing process, a single testing device can perform multiple testing operations.

Abstract: A data feature augmentation system and method for a low-precision neural network are provided. The data feature augmentation system includes a first time difference unit. The first time difference unit includes a first sample-and-hold circuit and a subtractor. The first sample-and-hold circuit is used for receiving an input signal and obtaining a first signal according to the input signal. The first signal is related to a first leakage rate of the first sample-and-hold circuit and the first signal is the signal generated by delaying the input signal by one time unit. The subtractor is used for performing subtraction on the input signal and the first signal to obtain a time difference signal. The input signal and the time difference signal are inputted to the low-precision neural network.

Abstract: A power backplane assembly is adapted to be connected to a power supply. The power supply outputs a first voltage. The power backplane assembly includes a backplane body, a conversion circuit board, and an output circuit board. The backplane body is for plugging in the power supply. The conversion circuit board is electrically connected to the backplane body. The backplane body is adapted to deliver the first voltage to the conversion circuit board. The conversion circuit board converts the first voltage into a second voltage. The output circuit board is electrically connected to the conversion circuit board and includes a first output connector and a second output connector. The first output connector is configured to output the first voltage, and the second output connector is at least configured to output the second voltage. A power supply module which has the power backplane assembly is also provided.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper electrode layer is etched to define an upper electrode and to expose a part of the capacitor dielectric layer. A spacer structure is formed over horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and also along sidewalls of the upper electrode. The spacer structure is etched to remove the spacer structure from over the horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and to define a spacer. The capacitor dielectric layer and the lower electrode layer are etched according to the spacer to define a capacitor dielectric and a lower electrode.

Abstract: A fitness equipment control system is provided. The system includes a receiver and a mobile apparatus, and performs the operations: generating a first control signal based on a training course of a user; transmitting the first control signal to the receiver to make the receiver generates a signal which is readable by the fitness equipment according to the first control signal and transmit the readable signal to the fitness equipment; receiving at least one physiological signal from at least one of the wearable devices worn by the user; based on the training course and the at least one physiological signal, generating a second control signal; and when the second control signal is generated, transmitting the second control signal to the receiver, wherein the receiver generates a signal which is readable by the fitness equipment according to the second control signal and transmits it to the fitness equipment.