Abstract: A backlight module comprises a back plate, a reflective sheet arranged on the back plate and forming a plurality of openings, a plurality of light-emitting elements located in the plurality of openings, at least one optical element arranged on the reflective sheet, and at least a supporting element configured between the back plate and the reflective sheet. The supporting element can move along with the reflective sheet. The supporting element has a base portion and a supporting portion extending from the base portion towards the optical element. The base portion of the supporting element is located between the back plate and the reflective sheet. The supporting portion of the supporting element passes through the reflective sheet to support the optical element. The supporting element is not a fixed design and can move along with the reflective sheet.

Abstract: Examples pertaining to improvement on user equipment (UE) uplink latency in wireless communications are described. When an apparatus is in a special mode, a processor of the apparatus transmits to a network a request for permission to perform an uplink (UL) transmission for a plurality of times. The processor then receives from the network a grant. In response to receiving the grant, the processor performs the UL transmission to the network. In transmitting the request for the plurality of times, the processor transmits the request for the plurality of times at a frequency higher than a frequency at which the request to perform UL transmissions is transmitted to the network when the apparatus is in a normal operational mode.

Abstract: A device for transferring electronic component, comprising: an energy source used to project an energy beam; a first frame used to carry a carrier loaded with electronic component; a second frame used to carry a substrate for receiving the aforesaid electronic component; a beam splitting element arranged between the first frame and the energy source; and a focusing device arranged between the first frame and the beam splitting element. The present invention also relates to a method of transferring electronic component. The device for transferring electronic component and the method for transferring electronic component of the present invention can be applied in the manufacturing process of display.

Abstract: A method for manufacturing a semiconductor device includes preparing an electrically conductive structure including a plurality of electrically conductive features, conformally forming a thermally conductive dielectric capping layer on the electrically conductive structure, conformally forming a dielectric coating layer on the thermally conductive dielectric capping layer, filling a sacrificial material into recesses among the electrically conductive features, recessing the sacrificial material to form sacrificial features in the recesses, forming a sustaining layer over the dielectric coating layer to cover the sacrificial features, and removing the sacrificial features to form air gaps covered by the sustaining layer. The thermally conductive dielectric capping layer has a thermal conductivity higher than that of the dielectric coating layer.

Abstract: The present disclosure provides a wafer. The wafer includes a die, a scribe line adjacent to the die, and a test circuit adjacent to the scribe line. The test circuit includes a first switch, a second switch, and a third switch. The first switch has a first node coupled to a first device-under-test and a second node coupled to a first signal supply node. The second switch has a first node coupled to the second DUT and a second node coupled to the first signal supply node. The third switch has a first node directly coupled to the first DUT and the second DUT. The third switch has a second node coupled to a second signal supply node. The third switch selectively couples both of the first DUT and the second DUT to the second signal supply node.

Abstract: A method for forming an interconnect structure is described. In some embodiments, the method includes forming a conductive layer, removing portions of the conductive layer to form a via portion extending upward from a bottom portion, forming a sacrificial layer over the via portion and the bottom portion, recessing the sacrificial layer to a level substantially the same or below a level of a top surface of the bottom portion, forming a first dielectric material over the via portion, the bottom portion, and the sacrificial layer, and removing the sacrificial layer to form an air gap adjacent the bottom portion.

Abstract: An optical lens assembly includes a glass lens element. The glass lens element has a refractive power, an optical surface of the glass lens element is non-planar, an anti-reflective membrane layer is formed on the optical surface, and the anti-reflective membrane layer includes a nanostructure layer and a structure connection film. The nanostructure layer has a plurality of ridge-like protrusions extending non-directionally from the optical surface, and a material of the nanostructure layer includes aluminum oxide. The structure connection film is disposed between the optical surface and the nanostructure layer, the structure connection film includes at least one silicon dioxide layer, the at least one silicon dioxide layer contacts a bottom of the nanostructure layer physically, and a thickness of the at least one silicon dioxide layer is greater than or equal to 20 nm and less than or equal to 150 nm.

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

Abstract: The present disclosure related to a wiper including a buckling seat (10), an elastic arm (20), a scrapping strip (40) and an end sleeve (50). The elastic arm (20) is connected to the buckling seat (10) and has an end part (21) with a buckling hole (22), and one side of the elastic arm (20) has a bottom surface (23). The scrapping strip (40) is disposed on the bottom surface (23) of the elastic arm (20). The end sleeve (50) has a buckling hook (51) buckled with the buckling hole (22). Accordingly, the wiper may be easily assembled and the scrapping strip (40) may be effectively fastened.

Abstract: A heat dissipation device is provided and includes a vapor chamber unit, a heat pipe set provided on an outer surface of the vapor chamber unit, a first fin set provided on the outer surface of the vapor chamber unit and sleeving the heat pipe set, and a second fin set stacked on the first fin set and sleeving the heat pipe set, where the fin arrangement direction of the first fin set is different from the fin arrangement direction of the second fin set.

Abstract: An imaging lens assembly includes an imaging lens element assembly, and an optical axis passes through the imaging lens assembly. The imaging lens element assembly includes a plurality of lens elements, and the lens elements includes a first lens element and a second lens element, wherein a refractive index of the first lens element is different from a refractive index of the second lens element. Each of the first lens element and the second lens element includes at least one nanostructure layer and at least one structure connection film. The nanostructure layer is irregularly arranged, the nanostructure layer includes an alumina crystal. The structure connection film is disposed between a surface of the first lens element and the nanostructure layer and between a surface of the second lens element and the nanostructure layer.

Abstract: A package structure and a formation method of a package structure are provided. The method includes forming a conductive structure over a carrier substrate. The conductive structure has a lower portion and an upper portion, and the upper portion is wider than the lower portion. The method also includes disposing a semiconductor die over the carrier substrate. The method further includes forming a protective layer to surround the conductive structure and the semiconductor die. In addition, the method includes forming a conductive bump over the conductive structure. The lower portion of the conductive structure is between the conductive bump and the upper portion of the conductive structure.

Abstract: A fluid immersion cooling system includes a fluid tank that contains a layer of a dual-phase coolant fluid and one or more layers of single-phase coolant fluids. The dual-phase and single-phase coolant fluids are immiscible, with the dual-phase coolant fluid having a lower boiling point and higher density than a single-phase coolant fluid. A substrate of an electronic system is submerged in the tank such that high heat-generating components are immersed at least in the layer of the dual-phase coolant fluid. Heat from the components is dissipated to the dual-phase coolant fluid to generate vapor bubbles of the dual-phase coolant fluid. The vapor bubbles rise to a layer of a single-phase coolant fluid that is above the layer of the dual-phase coolant fluid. The vapor bubbles condense to droplets of the dual-phase coolant fluid. The droplets fall down into the layer of the dual-phase coolant fluid.

Abstract: A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structure includes a first fin portion and a second fin portion. The semiconductor device further includes a source/drain (S/D) region disposed on the first fin portion, a contact structure disposed on the S/D region, a gate structure disposed on the second fin portion, an air spacer disposed between a sidewall of the gate structure and the contact structure, a cap seal disposed on the gate structure, and an air cap disposed between a top surface of the gate structure and the cap seal.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.

Abstract: An assembly structure of a multi-stage impeller and wheel housing for use in a submersible pump that includes a connecting seat having a drainage channel, shaft, intermediate unit which has a wheel housing, inner guide cover, and impeller. The wheel housing has a central partition plate, with an upper ring housing and lower ring canopy extending upward and downward, respectively, along the perimeter of the central partition plate. The intermediate unit has the upper ring housing connected to the canopy of the connecting seat by a swivel snap structure. A bottom unit has a bottom impeller and bottom wheel housing, which has a water suction port, a bottom plate and a bottom ring housing that extends upward along the perimeter of the bottom plate. A bottom ring canopy of an intermediate unit is connected by a rotating snap structure, and the bottom ring housing is pressed by a sealing ring.

Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: A bi-directional optical module includes a substrate, at least one first light-emitting diode (LED), and at least one second LED. The first LED is disposed on a surface of the substrate. The first LED has a first reflection surface and a first light-outlet surface that are opposite to each other, and the first light-outlet surface is away from the substrate relative to the first reflection surface. The second LED is disposed on the same surface of the substrate. The second LED has a second reflection surface and a second light-outlet surface that are opposite to each other, and the second light-outlet surface is close to the substrate relative to the second reflection surface. The substrate has at least one light-transparent area that is not occupied by the first LED and the second LED.

Abstract: A windshield wiper structure includes a fixing frame, a support plate, a blade and at least one pressing strip. The fixing frame includes a fixing base and a pivot disposed on the fixing base. The support plate is connected on a bottom side of the fixing base and extended oppositely from the fixing base. The blade is connected to a bottom surface of the support plate. The pressing strip is disposed on the bottom side of the fixing base and presses the blade toward a direction away from the fixing base to contact with a glass surface. Therefore, the blade may be uniformly pressed to contact with a glass surface to remove rain or debris from the glass surface.