Patents by Inventor Cheng-wei Chen

Cheng-wei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220148918
    Abstract: A method for reducing wiggling in a line includes forming a first patterning layer over a metal feature and depositing a first mask layer over the first patterning layer. The first mask layer is patterned to form a first set of one or more openings therein and then thinned. The pattern of the first mask layer is transferred to the first patterning layer to form a second set of one or more openings therein. The first patterning layer is etched to widen the second set of one or more openings. The first patterning layer may be comprised of silicon or an oxide material. The openings in the first patterning layer may be widened while a mask layer is over the first patterning layer.
    Type: Application
    Filed: January 27, 2022
    Publication date: May 12, 2022
    Inventors: Kuan-Wei Huang, Cheng-Li Fan, Yu-Yu Chen
  • Publication number: 20220045441
    Abstract: An antenna module includes first and second antennas. The first antenna includes first, second and third radiators. A first end of the first antenna is a first feed-in end. The second and third radiators are connected to a second end of the first radiator. The second radiator has a first ground. The second antenna includes fourth, fifth and sixth radiators. The fifth radiator is connected to a second feed-in end of the fourth radiator. A second ground is located at an intersection between the fifth and sixth radiators. The antenna module covers first, second and third frequency bands.
    Type: Application
    Filed: September 7, 2020
    Publication date: February 10, 2022
    Applicant: Wistron Corporation
    Inventors: Po-Tsang Lin, Ying-Sheng Fang, Cheng-Wei Chen
  • Patent number: 11245204
    Abstract: An antenna module includes first and second antennas. The first antenna includes first, second and third radiators. A first end of the first antenna is a first feed-in end. The second and third radiators are connected to a second end of the first radiator. The second radiator has a first ground. The second antenna includes fourth, fifth and sixth radiators. The fifth radiator is connected to a second feed-in end of the fourth radiator. A second ground is located at an intersection between the fifth and sixth radiators. The antenna module covers first, second and third frequency bands.
    Type: Grant
    Filed: September 7, 2020
    Date of Patent: February 8, 2022
    Assignee: Wistron Corporation
    Inventors: Po-Tsang Lin, Ying-Sheng Fang, Cheng-Wei Chen
  • Publication number: 20220030728
    Abstract: A fixing mechanism, applied to an electronic device to fix an electronic module. The fixing mechanism comprises a casing, a fixing structure and a locking structure. The casing includes a baseplate and a side plate to define a space to accommodate the electronic module, and the side plate has a hole and a seat. The fixing structure includes a fixing element and a pressing portion. The fixing element movably extends from the outer side of the side plate into the space through the hole. The pressing portion is rotatably disposed on the combining seat, and includes a first part having an opening and a second part corresponding to the fixing element. The locking structure is movably set in the opening, and includes an engaging element. When the engaging element is engaged in the opening, the locking structure presses against the side plate to fix the pressing portion.
    Type: Application
    Filed: July 2, 2021
    Publication date: January 27, 2022
    Inventors: Cheng-Wei CHEN, Kang-Yu LAI, Hsiu- Chieh CHU
  • Fan
    Patent number: 11209019
    Abstract: A fan impeller includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. Each of the annular blades has an inner periphery. A gap is provided between the inner periphery and the hub. Each of the annular blades further includes a plurality of spokes and an inner ring, the inner ring is disposed on and connected to the outer periphery of the hub, and two ends of the spoke are connected to the inner periphery and the inner ring of the annular blade. The spacers are separately disposed on the inner rings of the annular blades, respectively.
    Type: Grant
    Filed: January 11, 2021
    Date of Patent: December 28, 2021
    Assignee: DELTA ELECTRONICS, INC.
    Inventor: Cheng-Wei Chen
  • Publication number: 20210273106
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Cheng-Ta WU, Cheng-Wei CHEN, Shiu-Ko JANGJIAN, Ting-Chun WANG
  • Publication number: 20210228292
    Abstract: A surgical system includes: (1) an imaging device configured to acquire imaging data of a surgical site; (2) a surgical manipulator configured to hold a surgical tool; and (3) a controller connected to the imaging device and the surgical manipulator, wherein the controller is configured to receive the imaging data from the imaging device and derive, from the imaging data, an insertion trajectory for the surgical tool through an incision at the surgical site.
    Type: Application
    Filed: May 14, 2019
    Publication date: July 29, 2021
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Tsu-Chin TSAO, Jean-Pierre HUBSCHMAN, Cheng-Wei CHEN, Yu-Hsiu LEE, Matthew GERBER
  • Patent number: 11011641
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Cheng-Wei Chen, Shiu-Ko Jangjian, Ting-Chun Wang
  • FAN
    Publication number: 20210131449
    Abstract: A fan impeller includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. Each of the annular blades has an inner periphery. A gap is provided between the inner periphery and the hub. Each of the annular blades further includes a plurality of spokes and an inner ring, the inner ring is disposed on and connected to the outer periphery of the hub, and two ends of the spoke are connected to the inner periphery and the inner ring of the annular blade. The spacers are separately disposed on the inner rings of the annular blades, respectively.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Inventor: Cheng-Wei CHEN
  • Fan
    Patent number: 10920790
    Abstract: A fan includes a frame, an impeller, and a motor. The impeller is disposed in the frame and includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. The motor is disposed in the frame and drives the impeller to rotate to induce an airflow. The thickness of each annular blade is smaller than or equals to 0.2 mm.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: February 16, 2021
    Assignee: DELTA ELECTRONICS, INC.
    Inventor: Cheng-Wei Chen
  • Publication number: 20200152795
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.
    Type: Application
    Filed: January 6, 2020
    Publication date: May 14, 2020
    Inventors: Cheng-Ta WU, Cheng-Wei CHEN, Shiu-Ko JANGJIAN, Ting-Chun WANG
  • Publication number: 20200046450
    Abstract: A system for imparting motion of an object includes: (1) at least one first hydrostatic actuator; (2) a hydraulic transmission conduit; and (3) at least one second hydrostatic actuator. The first hydrostatic actuator is connected to the second hydrostatic actuator via the hydraulic transmission conduit, such that an input displacement applied to the first hydrostatic actuator is transmitted via the hydraulic transmission conduit to the second hydrostatic actuator to impart motion of the object.
    Type: Application
    Filed: February 20, 2018
    Publication date: February 13, 2020
    Inventors: Tsu-Chin TSAO, James M. SIMONELLI, Holden H. WU, Samantha MIKAIEL, Yu-Hsiu LEE, Cheng-Wei CHEN, Kyung Hyun SUNG, David S. LU
  • Publication number: 20200040900
    Abstract: A thin cooling fan includes a fan shell, a motor, a plurality of blades, and a PCB. The fan shell comprises a base plate and a shell cover which cover to each other to form an inner space. The base plate has a first surface facing toward the inner space and a second surface having a receiving space and opposite to the first surface. The motor is combined in the inner space. The blades are disposed in the inner space and rotated by the motor. The PCB is disposed in the receiving space and flush with the second surface. Thus, the whole thickness of the cooling fan is reduced and the flow channel design in the inner space is not affected.
    Type: Application
    Filed: October 10, 2019
    Publication date: February 6, 2020
    Inventors: Cheng-Wei CHEN, Hsiang-Jung HUANG
  • Patent number: 10529863
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Cheng-Wei Chen, Shiu-Ko Jangjian, Ting-Chun Wang
  • Publication number: 20190380795
    Abstract: A robotic surgery system includes: (1) a positioning stage and (2) at least one manipulator arm mounted to the positioning stage, wherein the manipulator arm includes a track and a tool carriage moveably mounted to the track, and the tool carriage includes a base and a pair of light emitting devices mounted to the base.
    Type: Application
    Filed: February 26, 2018
    Publication date: December 19, 2019
    Inventors: Tsu-Chin TSAO, Cheng-Wei CHEN, Yu-Hsiu LEE, Matthew GERBER, Jean-Pierre HUBSCHMAN
  • Patent number: 10361494
    Abstract: A wire connection terminal structure includes a terminal main body and a stopper member. One end of the terminal main body is formed with a connection section. Two support legs extend from the connection section for securely connecting with a preset circuit board. The connection section defines a socket. An elastic abutment plate obliquely extends from the connection section between the two support legs. A locating section is disposed at one end of each support leg. The stopper member is securely connected to the support legs via the locating sections. A stop face is formed on one side of one end of the stopper member proximal to the connection section and positioned in the moving path of the elastic abutment plate when elastically deformed. After the elastic abutment plate is forced, the deformation amount of the elastic abutment plate is restricted by the stop face.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: July 23, 2019
    Assignees: Switchlab Inc., Switchlab (Shanghai) Co., Ltd.
    Inventors: Chih-Yuan Wu, Wei-Chi Chen, Cheng-Wei Chen
  • Publication number: 20190198672
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile, by the thermal hydrogen treatment.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 27, 2019
    Inventors: Cheng-Ta WU, Cheng-Wei CHEN, Shiu-Ko JANGJIAN, Ting-Chun WANG
  • FAN
    Publication number: 20190195242
    Abstract: A fan includes a frame, an impeller, and a motor. The impeller is disposed in the frame and includes a hub, a plurality of annular blades, and a plurality of spacers. The annular blades are stacked along an axial direction of the hub and disposed around the outer periphery of the hub. The extension directions of the annular blades are perpendicular to the axial direction of the hub. Each of the spacers is disposed between the two adjacent annular blades. The motor is disposed in the frame and drives the impeller to rotate to induce an airflow. The thickness of each annular blade is smaller than or equals to 0.2 mm.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 27, 2019
    Inventor: Cheng-Wei CHEN
  • Patent number: 10192988
    Abstract: Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolation region is recessed by an etch process to form a recessed portion and to expose the upper portion of the fin structure, where the recessed portion has a first isolation surface profile. A thermal hydrogen treatment is applied to the fin structure and the recessed portion. A gate dielectric layer is formed with a substantially uniform thickness over the fin structure, where the recessed portion is adjusted from the first isolation surface profile to a second isolation surface profile and the fin structure is adjusted from the first fin surface profile to a second fin surface profile by the thermal hydrogen treatment.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: January 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Ta Wu, Shiu-Ko Jangjian, Cheng-Wei Chen, Ting-Chun Wang
  • Patent number: 10008954
    Abstract: In accordance with an embodiment, a method includes driving at least one electronic switch coupled to at least one inductor in a converter stage of a switched mode power supply based on a clock signal, and modulating a clock frequency of the clock signal over a predefined first frequency range around a center frequency such that a frequency spectrum of the clock signal is asymmetric. The switched mode power supply includes a filter coupled between the converter stage and an input of the switched mode power supply.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: June 26, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Johann Kolar, Matthias Kasper, Cheng-Wei Chen