Abstract: A method of forming a multi-state nanosheet transistor device is provided. The method includes forming an alternating sequence of sacrificial layer segments and differentially doped nanosheet layer segments on a substrate, wherein each of the differentially doped nanosheet layer segments has a different dopant concentration from the other differentially doped nanosheet layer segments. The method further includes forming a source/drain on each of opposite ends of the sacrificial layer segments and differentially doped nanosheet layer segments, and removing the sacrificial layer segments. The method further includes depositing a gate dielectric layer on the differentially doped nanosheet layer segments, and forming a gate electrode on the gate dielectric layer to form a common gate-all-around structure, where each of the differentially doped nanosheet layer segments conducts current at a different threshold voltage.

Abstract: A method for forming a semiconductor device comprises receiving a substrate with a silicon oxide layer formed over the substrate and a nano-wire based semiconductor device formed using template-assisted-selective epitaxy (TASE) over the silicon oxide layer. The semiconductor device serves as a seed layer to form at least one i) silicon nanowire which extends laterally in the semiconductor device and over the silicon oxide layer, ii) tunnel which extends laterally in the semiconductor device and over the silicon oxide layer, and iii) nuclei on the silicon oxide layer. A film is deposited over the semiconductor device and the silicon oxide layer. The film is removed over silicon oxide layer outside the semiconductor device. Next the nuclei on the silicon oxide layer are removed. Finally, the silicon oxide layer over the semiconductor device is removed.

Abstract: A method of forming a multi-state nanosheet transistor device is provided. The method includes forming an alternating sequence of sacrificial layer segments and differentially doped nanosheet layer segments on a substrate, wherein each of the differentially doped nanosheet layer segments has a different dopant concentration from the other differentially doped nanosheet layer segments. The method further includes forming a source/drain on each of opposite ends of the sacrificial layer segments and differentially doped nanosheet layer segments, and removing the sacrificial layer segments. The method further includes depositing a gate dielectric layer on the differentially doped nanosheet layer segments, and forming a gate electrode on the gate dielectric layer to form a common gate-all-around structure, where each of the differentially doped nanosheet layer segments conducts current at a different threshold voltage.

Abstract: A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.

Abstract: A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.

Abstract: Embodiments of the present invention provide methods for fabricating a semiconductor device with selective oxidation. One method may include providing a semiconductor substrate including a stack of two semiconductor layers; depositing an insulating material on the semiconductor substrate; forming a set of fins; selectively oxidizing one of the semiconductor layers; forming a dummy gate structure and a set of spacers along the sides of the dummy gate structure; forming a source drain region adjacent to the dummy gate structure; removing the dummy gate structure; and releasing the selectively oxidized semiconductor layer.

Abstract: A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

Abstract: A method of fabricating an n-type field effect transistor device (nFET) in a region of a wafer element is provided. The method includes forming a mandrel in the region and growing III-V semiconductor materials on the mandrel. The method also includes pulling the mandrel from a gate space in which a capped gate structure is formable and from source and drain (S/D) contact spaces and growing III-V semiconductor materials in the S/D contact spaces.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: A method of forming a III-V semiconductor vertical fin is provided. The method includes forming a fin mandrel on a substrate, forming a spacer layer on the substrate surrounding the fin mandrel, forming a wetting layer on each of the sidewalls of the fin mandrel, forming a fin layer on each of the wetting layers, removing the fin mandrel, removing the wetting layer on each of the fin layers, and forming a fin layer regrowth on each of the sidewalls of the fin layers exposed by removing the wetting layer from each of the fin layers.

Abstract: Embodiments of the present invention provide methods for fabricating a semiconductor device with selective oxidation. One method may include providing a semiconductor substrate including a stack of two semiconductor layers; depositing an insulating material on the semiconductor substrate; forming a set of fins; selectively oxidizing one of the semiconductor layers; forming a dummy gate structure and a set of spacers along the sides of the dummy gate structure; forming a source drain region adjacent to the dummy gate structure; removing the dummy gate structure; and releasing the selectively oxidized semiconductor layer.

Abstract: A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.

Abstract: A display method includes requesting a memory to allocate a first memory space for the first application corresponding to a first adjusted size adjusted from a first default size of a first destination frame of the first application, requesting the memory to allocate a second memory space for the second application corresponding to a second default size of a second destination frame of the second application, synthesizing a first application image generated in the first memory space and a second application image generated in the second memory space, and controlling a display component to display the display image.

Abstract: A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.

Abstract: A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.

Abstract: A method comprises providing a sacrificial release layer on a base substrate; forming a device layer on the sacrificial release layer; depositing a metal stressor layer on the device layer; etching the sacrificial release layer; and using epitaxial lift off to release the device layer and the metal stressor layer from the base substrate.

Abstract: A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.

Abstract: A lateral bipolar junction transistor including an emitter region, base region and collector region laterally orientated over a type IV semiconductor substrate, each of the emitter region, the base region and the collector region being composed of a type III-V semiconductor material. A buried oxide layer is present between the type IV semiconductor substrate and the emitter region, the base region and the collector region. The buried oxide layer having a pedestal aligned with the base region.

Abstract: A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.

Abstract: Embodiments of the present invention provide methods for fabricating a semiconductor device with selective oxidation. One method may include providing a semiconductor substrate including a stack of two semiconductor layers; depositing an insulating material on the semiconductor substrate; forming a set of fins; selectively oxidizing one of the semiconductor layers; forming a dummy gate structure and a set of spacers along the sides of the dummy gate structure; forming a source drain region adjacent to the dummy gate structure; removing the dummy gate structure; and releasing the selectively oxidized semiconductor layer.