Abstract: The invention relates to a fully automated, energy-efficient garment washing system designed for use in commercial-base textile cleaning services, such as laundromats and wash and fold delivery services, etc. The system incorporates an AI-powered control unit that manages washing cycles, optimizes water and energy consumption, and provides patrons with monitoring and security options. The system features a robotic arm for automated loading and unloading of laundry using the easy clutch-able removable container, and multiple sensors for real-time monitoring and diagnostics. The washing main body also includes a futuristic design resembling an all-in-one 3D-printed unibody, emphasizing its advanced technology and eco-friendly operation. This system enhances user convenience, reduces operational costs, and promotes sustainable practices in the laundry industry.

Abstract: Systems and methods for reconciling location based on multiple computing device signals. For example, the computing system can obtain location datasets associated with freight carrier services from computing sources. The computing system can determine an expected signal pattern for a location associated with a freight transportation service. The computing system can determine, for each computing source, a confidence score. The confidence score can represent the probability that the respective location dataset is associated with a load being transported for a freight transportation service. The computing system can determine a primary location dataset based on the confidence scores. The computing system can perform actions based on the primary location dataset.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, a barrier layer on the channel layer and a gate structure on the barrier layer. The gate structure includes a gate layer, a gate electrode layer, a first protection pattern layer and second protection spacers. The gate electrode layer covers the gate layer. The first protection pattern layer covers a first top surface of the gate electrode layer. The second protection spacers cover first side surfaces of the gate electrode layer, second side surfaces of the first protection pattern layer and a portion of the gate layer. First interfaces between the second protection spacers and the gate layer are coplanar with a second interface, which is between the gate electrode layer and the gate layer.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a first silicon oxide layer contacting the semiconductor fin at a first interface and including nitrogen at a first concentration. The semiconductor device includes a second silicon oxide layer contacting the first silicon oxide layer at a second interface and including nitrogen at a second concentration that is greater than the first concentration.

Abstract: A cleaning device includes a connecting member, a brushing assembly, and a limiting member. The connecting member has a driving end, a driven end adapted for connecting to a power tool, and a driving hole extending from the driving end towards the driven end. The inner surface of the driving hole is provided with a first limiting slot. The brushing assembly includes a holding member detachably connected to the driving hole and a brushing member mounted on the holding member. The outer surface of the holding member is provided with a second limiting slot corresponding to the first limiting slot, and the brushing member has a rough surface. The limiting member is detachably engaged into the first limiting slot and the second limiting slot.

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Abstract: In method of manufacturing a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, an opening is formed in the one or more dielectric layers to expose the source/drain epitaxial layer, a first silicide layer is formed on the exposed source/drain epitaxial layer, a second silicide layer different from the first silicide layer is formed on the first silicide layer, and a source/drain contact is formed over the second silicide layer.

Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: An implantable phototherapy device includes a power receiver element configured to receive power from an external power transmitter, a light delivery element powered by the power receiver, and configured to deliver phototherapy to a target treatment area, and a tether element is coupled to the light delivery element and the power receiver element. The tether element is configured to deliver power between the power receiver element and the light delivery element.

Abstract: An infrared filter film layer and an infrared filter structure are provided. The infrared filter film layer includes at least one silicon-based layer, at least one isolation layer, and at least one oxide layer that are stacked with each other. The at least one isolation layer is disposed between the at least one silicon-based layer and the at least one oxide layer. Through this configuration, the infrared filter film layer has good quality, such that an amount of wavelength drift is small in application. The infrared filter structure includes a light-transmitting substrate and the infrared filter film layer.

Abstract: The present disclosure provides a split gate MOSFET and a manufacturing method thereof. An epitaxy layer with a first conductivity type is formed on a substrate. A plurality of trenches are formed in the epitaxy layer. Impurities with a second conductive type is implanted and driven to the trenches to form a plurality of first doping areas. Since the first doping areas and none-doping areas of the epitaxy layer are alternately arranged with each other, and the first conductive type and the second conductive type are different conductivity types selected from P type or N type, the split gate MOSFET including the super junction structure is manufactured, and the advantages of simplifying manufacturing process, reducing cost and greatly reducing the on-resistance are achieved.

Abstract: A phase-change memory cell includes an insulating layer; a first electrode embedded in the insulating layer, wherein an outer end of the first electrode is locally flush with an outer surface of the insulating layer; a second electrode, larger than the first electrode, and spaced from the first electrode; a compositionally homogenous crystalline phase change material layer; and a highly oriented seed layer. A crystal structure of the homogenous phase change material layer is correlated with a crystal structure of the highly oriented seed layer. The compositionally homogenous phase change material layer and the highly oriented seed layer are located at least partially between the first and second electrodes.

Abstract: A power saving method for lower-power devices is disclosed. Unencrypted IoT packets are received from low-power sensors. An identity of a mobile device is registered and public keys are exchanged between an MQTT agent and the mobile device. An advanced encryption standard (AES) key is generated according to public and private keys of the MQTT agent and a public key of the mobile device and received IoT packets are encrypted using the AES key. The encrypted IoT packets are transmitted to an MQTT broker. The MQTT broker forward the encrypted IoT packets to the mobile device. The mobile device exchanges the AES key with the electronic device according to its own public key through the secure shell (SSH) mechanism. The mobile device decrypts the IoT packets through the AES key.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

Abstract: Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.

Abstract: Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.