Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: An anti-slip fastener driver includes a shank and a driving portion formed on an end of the shank and defining a longitudinal axis. The driving portion includes an outer periphery surrounding the longitudinal axis and having a first peripheral face. An end of the driving portion opposite to the shank includes a first bevel face connected to the first peripheral face. The first bevel face includes a first side and a first corner opposite to the first side. The end of the driving portion opposite to the shank defines a reference plane perpendicular to the longitudinal axis. The first side is located on the reference plane. The first corner is located between the reference plane and the shank.

Abstract: Embodiments herein describe partitioning an acceleration device based on the needs of each user application executing in a host. In one embodiment, a flexible queue provisioning method allows the acceleration device to be dynamically partitioned by pushing the configuration through a control command queue to the device by management software running in a trusted zone. The new configuration is parsed and verified by trusted firmware, which, then, creates isolated IO command queues on the acceleration device. These IO command queues can be directly mapped to a user application, VM, or other PCIe devices. In one embodiment, each IO command queue exposes only the compute resource assigned by the trusted firmware in the acceleration device.

Abstract: A package structure is provided. The package structure includes a conductive structure having a first portion and a second portion, and the second portion is wider than the first portion. The package structure also includes a semiconductor chip laterally separated from the conductive structure. The package structure further includes a protective layer laterally surrounding the conductive structure and the semiconductor chip. The first portion of the conductive structure has a sidewall extending from the second portion to a surface of the protective layer. The protective layer laterally surrounds an entirety of the sidewall of the first portion.

Abstract: An optical system is provided. The optical system includes a light source assembly, a sensing element, and a light guiding element. The light source assembly is used for generating first light and second light. The sensing element is used for sensing third light from the second light reflected by an eye. The light guiding element is used for transporting the first light, the second light, and the third light. Wavelengths of the first light and the second light are different.

Abstract: An electronic device includes a substrate, a conductive structure disposed on the substrate, and a first insulating island disposed on the conductive structure. The conductive structure includes a first conductive component, a second conductive component, and a third conductive component. The third conductive component is disposed on the first conductive component and the second conductive component. The third conductive component is electrically connected to the first conductive component and the second conductive component. In a cross-sectional view of the electronic device, the width of the first insulating island is greater than the width of the third conductive component.

Abstract: Embodiments of the present disclosure provide a method of forming a contact opening using selective ALE operations to remove ILD layer along an upper profile of a source/drain region, and then form a source/drain contact feature having a concave bottom profile with increased contact area.

Abstract: A power supply is provided. The power supply includes a power supply circuit and a control circuit. The power supply circuit includes a voltage converter and multiple point-of-load circuits. The voltage converter generates a third voltage according to a first voltage. The load point-of-load circuits generate at least one second voltage and at least one state signal according to the third voltage. The at least one second voltage is suitable for supplying power to a load. The control circuit is coupled to the power supply circuit. The control circuit determines whether a single event latch-up occurs in the power supply circuit according to the at least one state signal. When the single event latch-up occurs in the power supply circuit, the control circuit switches off the power supply circuit to stop generating the at least one second voltage and the at least one state signal.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

Abstract: Provided herein are opioid receptor modulators and pharmaceutical compositions comprising said compounds.

Abstract: An optical system is provided. The optical system includes a light source assembly, a light guiding element, and a first optical assembly. The light source assembly is used for generating first light and second light. The light guiding element is used for transporting the first light and the second light. The first optical assembly is disposed between the light guiding element and the light source assembly and used for transporting the first light and the second light. Wavelengths of the first light and the second light are different.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: A display may have an array of pixels. Display driver circuitry may supply data and control signals to the pixels. Each pixel may have seven transistors, a capacitor, and a light-emitting diode such as an organic light-emitting diode. The seven transistors may receive control signals using horizontal control lines. Each pixel may have first and second emission enable transistors that are coupled in series with a drive transistor and the light-emitting diode of that pixel. The first and second emission enable transistors may be coupled to a common control line or may be separately controlled so that on-bias stress can be effectively applied to the drive transistor. The display driver circuitry may have gate driver circuits that provide different gate line signals to different rows of pixels within the display. Different rows may also have different gate driver strengths and different supplemental gate line loading structures.

Abstract: A method for performing adaptive multi-link aggregation dispatching control in multi-link operation architecture and associated apparatus are provided.

Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

Abstract: A universal wiper base assembly structure includes a fastening base, a rear base, a combination base, and an outer cover. The fastening base includes a main body and a decorative cover. The main body has a coupling hole, an insertion slot, a protruding platform, a positioning protrusion, a first shaft hole, two limiting arc surfaces, and multiple engagement grooves. The decorative cover has a fastening slot. The rear base includes two contact blocks, a top abutting block, and two hooks. The combination base includes two side plates, a connection plate, an open groove and a second shaft hole. The outer cover includes a fastening block, an opening, and a third shaft hole. Accordingly, a variety of wiper driving arms may be positioned to the universal wiper base assembly structure, so as to improve the convenience in assembling and reduce an overall cost.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.