Abstract: An organic optoelectronic compound comprises a structure such as Formula I: The organic optoelectronic compound features a pyrazine core structure, providing an additional conjugated plane, enhancing intermolecular interactions for smoother charge carrier flow and reducing energy loss, and improving thermal stability. Furthermore, by modifying the functional groups and structural symmetry, the arrangement of the material and its energy levels can be altered. The invention also provides an active layer material containing the compound and an organic optoelectronic device, both exhibiting good thermal stability.

Abstract: In order to maintain the white balance ratio of the mixed white light, a pixel unit is provided, which is composed of four sub-pixels of red, green, blue, and another green colors, and these sub-pixels are composed of a red LED element, a first green LED element, a blue LED element and a second green LED element. A control element is used to control the four sub-pixels of red, first green, blue and second green correspondingly by outputting control signals through the control channels. Base on the adjustment of the current, the brightness ratio of the above three colors is still maintained at the ratio of 3:6:1 of the white balance, and the ratio of the white balance of the white light after being mixed is also maintained.

Abstract: A waterborne autonomous rescue device floats in a body of water and continuously senses an ambient audio in the body of water, and performs voice recognition on the ambient audio to recognize a cry-out-for-help voice, and calculates a direction of an emission source (e.g. a drowning person) that emits the cry-out-for-help voice, and then the waterborne autonomous rescue device will automatically move forward in the direction of the emission source, so that the drowning person can cling to the waterborne autonomous rescue device and be carried to a safe location; a waterborne autonomous rescue system includes the waterborne autonomous rescue device which is further connected to a monitoring device; a monitoring personnel can check the status of the waterborne autonomous rescue device through the monitoring device. When a drowning incident occurs, the monitoring personnel can go to a location of the waterborne autonomous rescue device to carry out subsequent rescue.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.

Abstract: Distributed journaling for write operations to RAID systems is disclosed, including: receiving a new write operation to a plurality of storage devices associated with a redundant array of independent disks (RAID) group, wherein the plurality of storage devices comprises a main data storage and a non-volatile journal storage; writing a record of the new write operation to the non-volatile journal storage; after the record of the new write operation is written to the non-volatile journal storage, writing new data associated with the new write operation to the main data storage; and after the new data associated with the new write operation is written to the main data storage, invalidating the record of the new write operation in the non-volatile journal storage, wherein upon restarting the plurality of storage devices associated with the RAID group, the non-volatile journal storage is checked and valid records of one or more write operations included in the non-volatile journal storage are written to the main d

Abstract: The present invention relates to crystalline forms of a KRas G12C inhibitor and salt thereof. In particular, the present invention relates to crystalline forms of the KRas G12C inhibitor 2-[(2S)-4-[7-(8-chloro-1-naphthyl)-2-[[(2S)-1-methylpyrrolidin-2-yl]methoxy]-6,8-dihydro-5H-pyrido[3,4-d]pyrimidin-4-yl]-1-(2-fluoroprop-2-enoyl)piperazin-2-yl]acetonitrile, pharmaceutical compositions comprising the crystalline forms, processes for preparing the crystalline forms and methods of use thereof.

Abstract: A flow guiding device in an immersion-cooled chassis of a server comprises at least one deflector located above a chip on a mainboard in the chassis, each deflector comprises a first end for mounting to the mainboard above the chip and a second end inclined away from the mainboard. The first end is immersed in coolant, the second end is higher than the first end; the deflector further comprises a hollow part including multiple through holes for interrupting upward movement vapor bubbles generated by the hot chip, which reduces probability of the vapor bubbles escaping from the coolant liquid and the chassis. A liquid-cooled chassis having the flow guiding device is also disclosed.

Abstract: One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench.

Abstract: A pest control method includes providing a pest control composition or a vapor thereof in a space to kill at least one kind of pests in the space by toxicity. The pest control composition at least includes an active ingredient in an effective amount, and the active ingredient is an alkane with 10, 12, 14, or 16 carbon atoms or an isomer thereof.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.

Abstract: The present disclosure relates to a semiconductor wafer structure including a semiconductor substrate and a plurality of semiconductor devices disposed along the semiconductor substrate. A dielectric stack including a plurality of dielectric layers is arranged over the semiconductor substrate. A conductive interconnect structure is within the dielectric stack. A seal ring layer is over the dielectric stack and laterally surrounds the dielectric stack along a first sidewall of the dielectric stack. The seal ring layer includes a first protrusion that extends into a first trench in the semiconductor substrate.

Abstract: A stitching method for an exposure process includes following steps. A wafer is provided. The wafer includes interposer regions, each of which includes a logic chip region, a first memory chip region, and a second memory chip region. The logic chip region is located between the first and second memory chip regions. A photoresist layer is formed on the wafer. First exposure processes are performed on the photoresist layer by applying a first photomask to form first shot regions in the photoresist layer. Second exposure processes are performed on the photoresist layer by applying a second photomask to form second shot regions in the photoresist layer. The first shot regions and the second shot regions are arranged alternately in a first direction. The first shot regions and the second shot regions are overlapped to form stitching regions, each of which is not located in the logic chip region.

Abstract: A novel fusion protein to overcome the current difficulties related to application of monoclonal antibodies in disease treatment and in other fields, particularly those requiring ADCC, e.g. for depletion of tumor cells, virally-infected cells, or immune-modulating cells, etc. One example of the fusion protein is an extracellular domain of a high-affinity variant of human CD 16 A fused to an anti-CD3 antibody or its antigen-binding fragment thereof that specifically binds to an epitope on human CD3 or a fragment thereof.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.

Abstract: A display apparatus is provided. The display apparatus includes a display module and multiple light-emitting driving circuits. Each of the light-emitting driving circuits includes a timing control circuit and a driving circuit. The timing control circuit receives multiple clock signals and a previous light-emitting timing signal to provide a light-emitting timing signal and an internal voltage. The driving circuit receives a first phase signal among multiple phase signals and the internal voltage to provide a light-emitting driving signal to the display module based on the first phase signal and the internal voltage. The phase signals all present disabled levels during a vertical blank period.

Abstract: Techniques are described herein in which boot firmware validated by secure flash memory validates read-only portions of firmware stored by the firmware or a downloaded image of the read-only portions. The secure flash memory validates a portion of the firmware, which includes the boot firmware and a reference hash of the read-only portions, by comparing a calculated hash of the portion and the reference hash of the portion. The boot firmware initiates a boot of the firmware and validates the read-only portions (or the downloaded image of the read-only portions) by comparing a calculated hash of the read-only portions (or a calculated hash of the downloaded image) and the reference hash of the read-only portions. The boot firmware completes the boot of the firmware based at least on the read-only portions (or the downloaded image) being validated.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via.

Abstract: Various embodiments of the present application are directed towards an integrated chip structure. The integrated chip structure includes a bottom electrode over a substrate, a top electrode over the bottom electrode, and a capacitor insulator structure between the bottom electrode and the top electrode. The capacitor insulator structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer, and a third dielectric layer over the second dielectric layer. The first dielectric layer includes a first dielectric material. The second dielectric layer includes a second dielectric material that is different than the first dielectric material. The second dielectric material is an amorphous solid. The third dielectric layer includes the first dielectric material.