Abstract: The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate. The first transistor includes a first gate structure, and the second transistor includes a second gate structure. The first gate structure includes a first high-k layer, a first work function layer, an overlying work function layer, and a first capping layer sequentially formed on the substrate. The second gate structure comprising a second high-k layer, a second work function layer, and a second capping layer sequentially formed on the substrate. The first capping layer and the second capping layer comprise materials having higher resistant to oxygen or fluorine than materials of the second work function layer and the overlying work function layer.

Abstract: A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die.

Abstract: A digital assistant supported on devices such as smartphones, tablets, personal computers, game consoles, etc. includes an extensibility client that exposes an interface and service that enables third party applications to be integrated with the digital assistant so the application user experiences are rendered using the native voice of the digital assistant. Specific voice inputs associated with a given application may be registered by developers using a manifest that is loaded when the application is launched on the device so that voice inputs from the device user can be mapped by the digital assistant extensibility client to the appropriate application as input events for consumption. In typical implementations, the manifest is arranged as a declarative document that streamlines application development and provides a seamless user experience by enabling customization of third party applications to integrate the digital assistant's voice and behaviors within the user experience of the application's domain.

Abstract: An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.

Abstract: The application relates to a light-emitting assembly including a substrate and an effective light-emitting region. The substrate has a first surface and a second surface that are opposite to each other and has a transparent material. The light shielding layer is disposed on the first surface of the substrate, and a first edge and a second edge of the light shielding layer are spaced apart from each other, thereby forming an opening. The effective light-emitting region is defined on the second surface of the substrate, and the effective light-emitting region and the first edge of the light shielding layer are offset by a first distance in a lateral direction. The first distance is associated with a refractive index of the substrate, a refractive index of a material in the opening of the light shielding layer, and a thickness of the substrate.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A power supply system is provided. The power supply system includes a power supply, a main load unit, a DC-DC voltage conversion unit, a bypass unit, and at least one sub-load unit. The power supply is configured to provide an adjustable supply voltage. The main load unit is electrically connected to the power supply for receiving the supply voltage. The DC-DC voltage conversion unit is electrically connected to the power supply. The bypass unit is electrically connected to the power supply. The at least one sub-load unit is electrically connected to the DC-DC voltage conversion unit and the bypass unit. When the main load unit stops operating, the power supply adjusts the supply voltage and provides the adjusted supply voltage to the sub-load unit through the bypass unit.

Abstract: A Wi-Fi (Wi-Fi) device and a transmission control method are provided. The Wi-Fi device selectively transmits at least a data division of a transmission data on a low performance link based on several parameters. The parameters include a start time point of a backoff procedure of the low performance link, a duration information associated with another Wi-Fi device on a high performance link, and some predefined exception conditions. By overhearing status of another Wi-Fi device on the high performance link, the Wi-Fi device attempts to acquire the duration information. If the duration information can be acquired, the Wi-Fi device calculates a coherent remnant-duration accordingly. Then, the Wi-Fi device determines whether the transmission data should be transmitted immediately on the low performance link, transmitted later on the high performance link, or partially transmitted on the low performance link.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: An apparatus includes one or more processors and logic encoded in one or more non-transitory media for execution by the one or more processors and when executed operable to receive sensor data from a drone that travels around a target object. The logic is further operable to generate, based on the sensor data, a first three-dimensional (3D) reconstruction of the target object. The logic is further operable to estimate a direction of sunlight and a direction of spectral reflection. The logic is further operable to plan a trajectory of sensor capturing positions for the drone to capture images of the target object that reduce an amount of sunlight and an amount of specular reflection.

Abstract: The structure of a semiconductor device with inner spacer structures between source/drain (S/D) regions and gate-all-around structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a stack of nanostructured layers with first and second nanostructured regions disposed on the substrate and first and second source/drain (S/D) regions disposed on the substrate. Each of the first and second S/D regions includes an epitaxial region wrapped around each of the first nanostructured regions.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: The present invention provides a wireless communication method of a multi-link device. The wireless communication method includes the steps of: establishing multiple links with an access point, wherein the multiple links have a current link mode; determining performance of a current link mode and at least one candidate link mode, wherein frequency band(s) corresponding to the current link mode and the at least one candidate link mode are not the same; and if the performance of one of the at least one candidate link mode is greater than the performance of the current link mode, switching the link mode of the multiple links, without reconnecting to the access point, so that the one of the at least one candidate link mode serves as the current link mode to communicate with the access point.

Abstract: A filtering device is adapted to be mounted in a fan having a motor cover, a rotary shaft, an impeller combined at the rotary shaft, and a rear protective grill mounting on a mounting base provided on a front end of the motor cover. The filtering device includes an inner ring plate, an outer ring plate, and a filter element. The filter element is sandwiched between the inner ring plate and the outer ring plate, and the inner ring plate and the outer ring plate are coupled between the rear protective grill and the rear protective grill lock ring. The airflow sent out by the rotation of the impeller of the fan will pass through the filter element of the filtering device, achieving the effect of purifying air.

Abstract: A Faraday shield, a semiconductor processing apparatus, and an etching apparatus are provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.

Abstract: A connector is disclosed and includes a main body, a sleeving component, a conductive terminal and a signal terminal. The main body has an opening end and a sleeved end opposite to each other. An electronic device end is matched with the connector through the opening end. The sleeving component is slidably disposed on the sleeved end, and includes a conductive contact portion and a signal contact portion arranged in parallel. The conductive terminal is fixed to the main body for connecting with the conductive contact portion. The signal terminal is fixed to the main body for connecting with the signal contact portion. When the connector is detached from the electronic device end, the sleeving component is displaced relative to the main body, the signal contact portion is separated from the signal terminal, and the conductive terminal end and the conductive contact portion are maintained in an electrical connection.

Abstract: A multimedia processing method includes rendering, through a first native container node of a dynamic page, a content node associated with the first native container node to play multimedia content. The method further includes generating a non-dynamic page in response to a first page switching operation triggered in the dynamic page, and creating a second native container node in a second node tree of the non-dynamic page, the second native container node being supported by the native application framework provided by the operating system. The method further includes disassociating the content node from the first native container node, and establishing an association between the content node and the second native container node. The method further includes rendering, through the second native container node, the content node in the non-dynamic page to continue playing the rendered multimedia content in a portion of the generated non-dynamic page.

Abstract: A connector is disclosed and includes a housing base, a conductive terminal, a signal terminal and a protrusion. A sleeve of an electronic device end sleeves on the housing base through an opening end along a first direction and slides a first displacement distance, plural contact pins of the electronic device end slide into the accommodation space through the opening end, and a conductive contact pin of the electronic device end is interfered with the conductive terminal to form an electrical connection. The protrusion is elastically connected to the housing base and penetrates through the housing base. When the sleeve passes through the opening end and slides a second displacement distance greater than the first displacement distance, the protrusion is interfered with the sleeve and drives the signal terminal, so that the signal terminal pushes against a signal contact pin of the electronic device end to form an electrical connection.