Abstract: A resin composition is provided, which includes a first polymer and a second polymer. The first polymer is formed by a reaction of an epoxy resin modified with a first elastic molecular segment and an epoxy resin curing agent. The second polymer is formed by a polymerization of an acrylate modified with a second elastic molecular segment.

Abstract: The disclosed techniques include a space filling device to be used with a wet bench in chemical replacement procedures. The space filling device has an overall density that is higher than the chemicals used to purge the wet bench. As such, when embedded into the wet bench, or more specifically, the chemical tank of the wet bench, the space filling device will occupy a portion of the interior volume space. As a result, less purging chemicals are used to fill and bath the wet bench.

Abstract: A power supply with duty cycle limiting circuit includes a conversion circuit, a drive circuit, a control unit, and a duty cycle limiting circuit. The duty cycle limiting circuit converts a control signal into a control voltage, and determines whether a power switch of a power supply is turned off according to the control voltage and a threshold voltage to limit a duty cycle of the power switch.

Abstract: A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.

Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: In some examples a computing device can comprise a back plate and an electrical connection. The electrical connection is not in contact with a detect mechanism if a first voltage is generated; and the detect mechanism is in contact with the electrical connection if a second voltage is generated.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: The present disclosure provides for a cell stabilizing medium which comprises gelatin. The cell stabilizing medium help maintain cell viability, e.g., after thawing of a biological material post-cryopreservation.

Abstract: This application relates to an image processing method and apparatus, a storage medium, and a computer device. The method includes: obtaining a frequency domain mark image, the frequency domain mark image being obtained by performing frequency domain transformation on a spatial domain mark image; obtaining a transparency parameter configured corresponding to the frequency domain mark image; obtaining target page data; and performing layer superimposition rendering of the frequency domain mark image and the target page data according to the transparency parameter. The solution provided in this application can effectively protect target page data.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: Embodiments of the present invention provide improved multi-link operation over EML links. A non-AP MLD indicating support of EMLMR operation announces it's the number of spatial streams supported for receiving or transmitting after receiving the initial frame exchange during enhanced multi-link multi-radio (EMLMR) operation (MLD level capabilities). MLD level capabilities for operating over the EMLSR links is defined so that the EMLMR capable devices can improve/optimize their performance based on their computing capabilities and RF design.

Abstract: The disclosed techniques include a space filling device to be used with a wet bench in chemical replacement procedures. The space filling device has an overall density that is higher than the chemicals used to purge the wet bench. As such, when embedded into the wet bench, or more specifically, the chemical tank of the wet bench, the space filling device will occupy a portion of the interior volume space. As a result, less purging chemicals are used to fill and bath the wet bench.

Abstract: A gas tube, a gas supply system containing the same and a semiconductor manufacturing method using the same are provided. The gas tube includes a porous material body and a resistant sheath surrounding the porous material body. The porous material body has a hollow tube structure and an empty cavity inside the hollow tube structure. The porous material body is hydrophobic and has a plurality of pores therein. The resistant sheath is disposed on the porous material body and surrounds the porous material body. The resistant sheath includes a plurality of holes penetrating through the resistant sheath.

Abstract: A planar insulating spacer layer is formed over a substrate, and a vertical stack of a gate electrode, a gate dielectric layer, and a first semiconducting metal oxide layer may be formed thereabove. The first semiconducting metal oxide layer includes atoms of a first n-type dopant at a first average dopant concentration. A second semiconducting metal oxide layer is formed over the first semiconducting metal oxide layer. Portions of the second semiconducting metal oxide layer are doped with the second n-type dopant to provide a source-side n-doped region and a drain-side n-doped region that include atoms of the second n-type dopant at a second average dopant concentration that is greater than the first average dopant concentration. Various dopants may be introduced to enhance performance of the thin film transistor.

Abstract: An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

Abstract: An active bridge rectifying control apparatus includes a bridge rectifying unit and a rectifying control module. The rectifying control module includes a phase control unit, a low-side drive unit, and a self-drive unit. The phase control unit provides a live line signal and a ground line signal according to a positive half cycle and a negative half cycle of an AC power source. The low-side drive unit provides a low-side control signal according to the live line signal and the ground line signal. The self-drive unit establishes a drive voltage according to the positive half cycle and the negative half cycle of the AC power source, and provides a high-side control signal according to the low-side control signal. The bridge rectifying unit rectifies the AC power source into a DC power source according to the low-side control signal, the high-side control signal, and the drive voltage.

Abstract: In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

Abstract: A non-contact fiber permeability measurement system includes a mold device, a fluid supplying device, a capacitance detecting device and a permeability converting device. The mold device includes an upper plate, a lower plate and a fluid inlet. The lower plate is parallel to and disposed below the upper plate for forming an accommodating space disposing a measured fibrous fabric insulated against the upper plate and the lower plate. The fluid inlet is disposed through the upper plate. The fluid supplying device is connected to the mold device and for providing a fluid perfused from the fluid inlet into the accommodating space. The capacitance detecting device is electrically connected to the upper plate and the lower plate. The permeability converting device is electrically connected to the capacitance detecting device and for receiving the capacitance detected via the capacitance detecting device to convert the capacitance to a permeability.

Abstract: A system of multi-view imaging of an environment through which a target moves includes pluralities of drones, each drone having a drone camera. A first plurality of drones moves to track target movement, capturing a corresponding first plurality of images of the target's face, making real time determinations of the target's head pose and gaze from the captured images and transmitting the determinations to a second plurality of drones. The second plurality of drones moves to track target movement of the target, with drone camera poses determined at least in part by the head pose and gaze determinations received from the first plurality of drones, in order to capture a second plurality of images of portions of the environment in front of the target. Post-processing of the second plurality of images allows generation of a first-person view representative of a view of the environment seen by the target.