Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

Abstract: A method of manufacturing a semiconductor structure includes the following operations. A substrate is provided. A first conductive pillar, a second conductive pillar arid a third conductive pillar are disposed over the substrate. The first conductive pillar comprises a first height, the second conductive pillar comprises a second height, and the third conductive pillar comprises a third height. A first die is disposed over the first conductive pillar. A second die is disposed over the second conductive pillar. A first surface of the first die and a second surface of the second die are at substantially same level.

Abstract: An integrated circuit with a power-on-reset circuit includes an inverter circuit connected between the first and second supply node, a cascode-connected series of transistors MCn, for n going from 1 to N, connected between the first supply node and the input node of the inverter, and a resistive element connected between the input node of the inverter and the second supply node. The transistors in the cascode-connected series of transistors MCn pull up the input node voltage above a trip point voltage when the voltage between the input node and the first supply node is more than a threshold of the cascode-connected series. A circuit connected between the first and second supply nodes is responsive to a POR pulse output by the inverter.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a redistribution layer, a semiconductor die, conducting connectors, dummy bumps and an underfill. The semiconductor die is disposed on a top surface of the redistribution layer and electrically connected with the redistribution layer. The conducting connectors are disposed between the semiconductor die and the redistribution layer, and are physically and electrically connected with the semiconductor die and the redistribution layer. The dummy bumps are disposed on the top surface of the redistribution layer, beside the conducting connectors and under the semiconductor die. The underfill is disposed between the semiconductor die and the redistribution layer and sandwiched between the dummy bumps and the semiconductor die. The dummy bumps are electrically floating. The dummy bumps are in contact with the underfill without contacting the semiconductor die.

Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: A temperature measurement apparatus. The temperature measurement apparatus may include a temperature sensor body, the temperature sensor body having a substrate support surface; and a heat transfer layer, disposed on the substrate support surface, the heat transfer layer comprising an array of aligned carbon nanotubes.

Abstract: A display system is provided, which may include a processor, a controller, a content checker and a display panel. The controller receives an input signal, and generates a video data according to the input signal and a plurality of timing signals according to the input signal. The content checker includes a first look-up table. The content checker compares the video data with the first look-up table, and transmits a report to the controller or the processer according to a comparison result. The display panel displays the video data according to the timing signals.

Abstract: Methods for distributed histogram computation in a framework utilizing data stream sketches and samples are performed by systems and devices. Distributions of large data sets are scanned once and processed by a computing pool, without sorting, to generate local sketches and value samples of each distribution. The local sketches and samples are utilized to construct local histograms on which cardinality estimates are obtained for query plan generation of distributed queries against distributions. Local statistics of distributions are also merged and consolidated to construct a global histogram representative of the entire data set. The global histogram is utilized to determine a cardinality estimation for query plan generation of incoming queries against the entire data set. The addition of new data to a data set or distribution involves a scan of the new data from which new statistics are generated and then merged with existing statistics for a new global histogram.

Abstract: Integrated circuit packages and methods of forming the same are disclosed. A first die is mounted on a first side of a workpiece, the workpiece including a second die. The workpiece is mounted to a front side of a package substrate, where the first die is at least partially disposed in a through hole in the package substrate. A heat dissipation feature may be attached on a second side of the workpiece. An encapsulant may be formed on the front side of the package substrate around the workpiece.

Abstract: A chip package structure includes a fan-out package containing at least one semiconductor die, an epoxy molding compound (EMC) die frame laterally surrounding the at least one semiconductor die, and a redistribution structure. The fan-out package has chamfer regions at which horizontal surfaces and vertical surfaces of the fan-out package are connected via angled surfaces that are not horizontal and not vertical. The chip package structure may include a package substrate that is attached to the fan-out package via an array of solder material portions, and an underfill material portion that laterally surrounds the array of solder material portions and contacts an entirety of the angled surfaces. The angled surfaces eliminate a sharp corner at which mechanical stress may be concentrated, and distribute local mechanical stress in the chamfer regions over a wide region to prevent cracks in the underfill material portion.

Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.

Abstract: Enclosure assemblies with integrating flashing for protecting an accessory on a rooftop. The enclosure assemblies can include a base configured to protect the rooftop from water intrusion and a cover configured to be joined to the raised portion of the base. The base can include a bottom wall and a raised portion extending from the bottom wall. The base can include an uphill portion configured to be positioned beneath at least one full course of roof shingle on the rooftop, without having to cut the roof shingle. The raised portion can be disposed off-center relative to the central transverse axis of the bottom wall, leaving the uphill portion of the bottom wall uncovered.

Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

Abstract: A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and interposed by the gate structure. Each of the source/drain features includes a first doped source/drain region extended away from the substrate, and a second doped source/drain region disposed on top and side surfaces of the first doped source/drain region, in which a phosphorus doping concentration of the first doped source/drain region is lower than a doping concentration of the second doped source/drain region.

Abstract: A conductive material composition and a conductive material prepared therefrom are provided. The conductive material composition includes 40-80 parts by weight of disulfide resin having at least one terminal reactive functional group and 20-60 parts by weight of metal material. The terminal reactive functional group is independently acrylate group, methacrylate group, glycidyl group, oxiranyl group, oxetanyl group, or 3,4-epoxycyclohexyl group.

Abstract: A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.

Abstract: The present invention provides a double-layer cryogenic inflatable balloon including an inflatable balloon assembly and a cryogenic balloon assembly. The inflatable balloon assembly includes an inflatable balloon, an outer catheter and a liquid-filling cavity provided with a liquid-filling chamber, the inflatable balloon, the outer catheter and the liquid-filling cavity being communicated with each other. The cryogenic balloon assembly includes a cryogenic balloon, an inner catheter and a fluid-diverting cavity provided with a gas return chamber as well as a gas inlet pipe and an inflation assembly, the cryogenic balloon, the inner catheter and the fluid-diverting cavity being communicated with each other, wherein the cryogenic balloon is located in the inflatable balloon, and the inner catheter is located in the outer catheter.