Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto, wherein the substrate includes a wiring structure, and a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The package further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are separated by a molding material. A first hole and a second hole are formed on the second surface of the substrate. Finally, a frame is disposed over the first surface of the substrate, wherein the frame surrounds the first semiconductor die and the second semiconductor die.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto. The substrate includes a wiring structure. The semiconductor package structure also includes a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The semiconductor package structure further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The first semiconductor die and the second semiconductor die are separated by a molding material. In addition, the semiconductor package structure includes a first hole and a second hole formed on the second surface of the substrate.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a semiconductor die and a frame. The semiconductor die is disposed over the substrate. The frame is disposed over the substrate, wherein the frame is adjacent to the semiconductor die, and the upper surface of the frame is lower than the upper surface of the semiconductor die.

Abstract: In a method of manufacturing a semiconductor device, initial connection patterns are prepared, initial cutting patterns for cutting the initial connection patterns are prepared, non-functional connection patterns at least from the initial connection patterns are identified, final cutting patterns are prepared from the initial cutting patterns and the non-functional connection patterns, a photo mask is prepared from the final cutting patterns, a photo resist pattern is formed over a target layer by a lithography operation using the photo mask, the target layer is patterned to form openings in the target layer by using the photo resist pattern, and connection layers are formed by filling the openings with a conductive material.

Abstract: A semiconductor package assembly and method for forming the same are provided. The semiconductor package assembly includes a first semiconductor die and a second semiconductor die disposed on a first surface of a substrate. The first semiconductor die includes a peripheral region having a second edge facing the first edge of the second semiconductor die and a third edge opposite to the second edge, a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.

Abstract: A semiconductor package structure includes a substrate having a first surface and second surface opposite thereto, a first semiconductor die disposed on the first surface of the substrate, a second semiconductor die disposed on the first surface, a molding material surrounding the first semiconductor die and the second semiconductor die, and an annular frame mounted on the first surface of the substrate. The first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. The first semiconductor die is separated from the second semiconductor die by the molding material. The substrate includes a wiring structure. The first semiconductor die and the second semiconductor die are electrically coupled to the wiring structure. The annular frame surrounds the first semiconductor die and the second semiconductor die. The annular frame includes a retracted region at an outer corner of the annular frame.

Abstract: A control method is applied to a redundant power supply device, with the redundant power supply device is connected to a power demanding device and comprises a plurality of power supply units, with said control method comprising: detecting and calculating a required electrical power value of the power demanding device, and determining an operation quantity of the power supply units according to the required electrical power value and a plurality of efficient operation data for generating a control command, and selectively controlling the redundant power supply device according to the control command. Additionally, wherein the plurality of efficient operation data indicates a relationship between supplied power of the redundant power supply device and the operation quantity of the power supply units, and the relationship is associated with a power supply efficiency of the redundant power supply device.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a semiconductor die and a first memory die disposed on a first surface of a substrate, wherein the first memory die comprises a first edge facing the semiconductor die. The semiconductor die includes a peripheral region having a second edge facing the first edge of the first memory die and a third edge opposite to the second edge. The semiconductor die also includes a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package and a second semiconductor package overlying a portion of the first semiconductor package. The first semiconductor package includes a first redistribution layer (RDL) structure, a first semiconductor die and a molding compound. The first semiconductor die is disposed on a first surface of the first RDL structure and electrically coupled to the first RDL structure. The molding compound is positioned overlying the first semiconductor die and the first surface of the first RDL structure. The second semiconductor package includes a first memory die and a second memory die vertically stacked on the first memory die. The second memory die is electrically coupled to first memory die by through silicon via (TSV) interconnects formed passing through the second memory die.

Abstract: A method for system power management includes steps of detecting power output of plural power-supplying units (PSUs) and power consumption of plural computing node, so as to indirectly obtain real-time auxiliary power consumption of an auxiliary unit and continuously update maximum auxiliary power consumption; when one of the PSUs is malfunctioned, renewing the maximum sum of the power output of the other PSUs, and applying the difference of the renewed maximum sum of the power outputs and the maximum auxiliary power consumption as a first sum of the node power consumptions of the computing nodes; finally, according to the first sum of the node power consumptions, cutting down the power consumption of at least one of the computing nodes to a first node power consumption.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a semiconductor die and a first memory die disposed on a first surface of a substrate, wherein the first memory die comprises a first edge facing the semiconductor die. The semiconductor die includes a peripheral region having a second edge facing the first edge of the first memory die and a third edge opposite to the second edge. The semiconductor die also includes a circuit region surrounded by the peripheral region, wherein the circuit region has a fourth edge adjacent to the second edge and a fifth edge adjacent to the third edge. A minimum distance between the second edge and the fourth edge is a first distance, a minimum distance between the third edge and the fifth edge is a second distance, and the first distance is different from the second distance.

Abstract: A semiconductor package structure including a package substrate, at least one semiconductor die, a lid structure, a first electronic component and a heat sink is provided. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is on the first surface of the package substrate and is surrounded by an encapsulating layer. The lid structure surrounds and is spaced apart from the encapsulating layer. The lid structure includes a first opening that is covered by the first surface of the package substrate. The first electronic component is over the first surface of the package substrate and arranged within the first opening of the lid structure. The heat sink covers the lid structure and the semiconductor die.

Abstract: An adjustable filter assembly is provided. The adjustable filter assembly includes a filter and two electrodes. The two electrodes are respectively coupled to a surface of the filter, and electrically coupled to a controller. The controller is configured to apply a voltage to the filter and control the voltage to be changed or not. The voltage causes a state of a molecular arrangement of the filter to change such that a transmittance spectrum of the filter is changed correspondingly. Also, a camera module is provided.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto. The substrate includes a wiring structure. The semiconductor package structure also includes a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The semiconductor package structure further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The first semiconductor die and the second semiconductor die are separated by a molding material. In addition, the semiconductor package structure includes a first hole and a second hole formed on the second surface of the substrate.

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package and a second semiconductor package overlying a portion of the first semiconductor package. The first semiconductor package includes a first redistribution layer (RDL) structure, a first semiconductor die and a molding compound. The first semiconductor die is disposed on a first surface of the first RDL structure and electrically coupled to the first RDL structure. The molding compound is positioned overlying the first semiconductor die and the first surface of the first RDL structure. The second semiconductor package includes a first memory die and a second memory die vertically stacked on the first memory die. The second memory die is electrically coupled to first memory die by through silicon via (TSV) interconnects formed passing through the second memory die.

Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.

Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving a design layout of the IC, the design layout having a first main feature, and adding a negative assist feature to the design layout, wherein the negative assist feature has a first width, the negative assist feature divides the first main feature into a second main feature and a third main feature by the first width, and the first width is sub-resolution in a photolithography process.

Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving a design layout of the IC, the design layout having a first main feature, and adding a negative assist feature to the design layout, wherein the negative assist feature has a first width, the negative assist feature divides the first main feature into a second main feature and a third main feature by the first width, and the first width is sub-resolution in a photolithography process.

Abstract: Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.

Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving a design layout of the IC, the design layout having a first main feature, and adding a negative assist feature to the design layout, wherein the negative assist feature has a first width, the negative assist feature divides the first main feature into a second main feature and a third main feature by the first width, and the first width is sub-resolution in a photolithography process.