Abstract: A light emitting diode (LED) is provided in the disclosure. The LED includes a first contact electrode, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a current diffusion layer and a second contact electrode that are successively stacked. Multiple micro-structures extend through the light emitting layer and the second semiconductor layer in a stacking direction of the light emitting layer and the second semiconductor layer, where the multiple micro-structures each defines a borehole space. The borehole space has opposite ends which are respectively closed by the first semiconductor layer and the current diffusion layer. Quantum dots are filled in the borehole space of the multiple micro-structures. Lights of corresponding colors are emitted by exciting corresponding quantum dots with a part of blue lights emitted by the micro-structures.

Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.

Abstract: A micro LED and a manufacturing method thereof are provided. The micro LED includes a first semiconductor layer, an active layer, and a second semiconductor layer that are successively stacked together. The first semiconductor layer and the second semiconductor layer are of different types. The active layer includes a first quantum well layer and a second quantum well layer stacked together. The second quantum well layer and the second semiconductor layer form a nanoring. The first quantum well layer is configured to emit light of a first color. The second quantum well layer forming a sidewall of the nanoring is configured to emit light of a second color different from the first color. The first semiconductor layer is electrically coupled to a first electrode, and the second semiconductor layer is electrically coupled to a second electrode. A manufacturing method for a micro LED is provided.

Abstract: A light-emitting diode (LED) chip is provided. The LED chip includes a first semiconductor layer, a second semiconductor layer, a first electrode electrically connected with the first semiconductor layer, and a second electrode electrically connected with the second semiconductor layer. The first electrode is in an annular shape and surrounds the second electrode. The first electrode and the second electrode cooperate to define a first channel therebetween. The first channel is in an annular shape. The first electrode defines at least one second channel therein. The at least one second channel extends through an inner side and an outer side of the first electrode and communicates with the first channel. A communication between the first channel and the second channel facilitates solder volatiles during soldering the LED chip, and potential short circuits can be further avoided. A display panel and an electronic device are further provided.

Abstract: A light emitting diode (LED) chip and a method for manufacturing an LED chip are provided. The LED chip includes a sapphire layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a P electrode, and an N electrode. The N-type semiconductor layer, the light emitting layer, the P-type semiconductor layer, the P electrode are sequentially disposed on a surface of the sapphire layer. The sapphire layer defines multiple preset patterns which extend through the sapphire layer, and the multiple preset patterns are used for reflecting a light of a preset wavelength through a channel defined by the sapphire layer.

Abstract: A method for micro-LED epitaxial wafer manufacturing and a micro-LED epitaxial wafer are provided. The method includes the following. For each growth region of a micro-LED chip on a growth substrate, photoresist is applied to the growth region. For each growth region, an epitaxial isolation wall is grown at a boundary of the growth region. For each growth region, the photoresist on the growth substrate is removed with the epitaxial isolation wall remained. For each growth region, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer are grown in the growth region to obtain a micro-LED epitaxial structure. The growth substrate is cut along the epitaxial isolation wall, to obtain at least two micro-LED epitaxial structures.

Abstract: A printing head module for a 3-D printing apparatus includes a 3-D print head, an ink-jet print head and a baking module. The 3-D print head includes a melting module and a base-material nozzle to print a plurality of staking layers. The ink-jet print head is connected to the 3-D print head and includes an ink nozzle to dispense ink on each stacking layer. The baking module is disposed between the 3-D print head and the ink-jet print head and includes a fan, a discharge casing and a heating module. The fan includes an air-discharge side facing the base to provide an air flow. The discharge casing is disposed on the air-discharge side. The heating module is disposed between the fan and the discharge casing to heat the air flow and the heated air flow being blown out via the discharge casing for drying the ink layer.

Abstract: A method of molding a product including an undercut part or a right-angle part includes providing a female mold, a first male mold and a temporary mold to form a first molding chamber, wherein a boundary between a core and a lifter of the first male mold is located outside the first molding chamber; performing a first injection into the first molding chamber to mold a first portion of the product including the undercut part or the right-angle part; removing the temporary mold; replacing the first male mold with a second male mold to form a second molding chamber, wherein a boundary between a core and a lifter of the second male mold is located outside the second molding chamber; and performing a second injection into the second molding chamber to mold a second portion of the product integrally formed with the first portion of the product.

Abstract: A vacuum deposition composite target includes a plurality of target blocks each including a target body, an insulating layer and a high-resistance-conductive layer. The target body has a top surface, a bottom surface and a peripheral surface connected between the top and bottom surfaces. The insulating layer is formed on the peripheral surface. The high-resistance-conductive layer is formed on the bottom surface of the target body and has a resistance higher than that of the target body. The target blocks are juxtaposed to each other. Each of the target blocks has a modulated resistance. A modulated resistance difference between any two adjacent ones of the target blocks is not greater than 5%.

Abstract: A three dimensional printing apparatus and a printing head module are provided. The three dimensional printing apparatus includes a base, a printing head module and a controller. The base has a carrying surface. The printing head module includes a printing head, a fan and a nozzle guiding cover. The printing head includes a heating element, a feeding channel and a nozzle. The feeding channel connects the nozzle. The nozzle guiding cover is disposed correspondingly to the fan and extended to the nozzle. The nozzle guiding cover includes a nozzle outlet located between the nozzle and the carrying surface. The controller is coupled to the printing head module to control a hot-melt material transmitting to the nozzle, and the heating element is configured to heat the nozzle so the hot-melt material is melted and dispensed on the carrying surface to form a three dimensional object.

Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Abstract: A printing head module for a 3-D printing apparatus includes a 3-D print head, an ink-jet print head and a baking module. The 3-D print head includes a melting module and a base-material nozzle to print a plurality of staking layers. The ink-jet print head is connected to the 3-D print head and includes an ink nozzle to dispense ink on each stacking layer. The baking module is disposed between the 3-D print head and the ink-jet print head and includes a fan, a discharge casing and a heating module. The fan includes an air-discharge side facing the base to provide an air flow. The discharge casing is disposed on the air-discharge side. The heating module is disposed between the fan and the discharge casing to heat the air flow and the heated air flow being blown out via the discharge casing for drying the ink layer.

Abstract: A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.

Abstract: A heat dissipating device is provided for reducing the high production costs of conventional heat dissipating devices. The heat dissipating device is mounted on a heat generating object and includes a heat conductive base having a plurality of insertion holes. At least one heat generating region is formed in a contact area between the heat conductive base and a heat source of the heat generating object. A plurality of heat dissipating columns is disposed in the at least one heat generating region and is respectively inserted into and positioned in the plurality of insertion holes. Each heat dissipating column includes a heat conductive silicone layer disposed on an outer periphery thereof.

Abstract: A three dimensional printing apparatus and a printing head module are provided. The three dimensional printing apparatus includes a base, a printing head module and a controller. The base has a carrying surface. The printing head module includes a printing head, a fan and a nozzle guiding cover. The printing head includes a heating element, a feeding channel and a nozzle. The feeding channel connects the nozzle. The nozzle guiding cover is disposed correspondingly to the fan and extended to the nozzle. The nozzle guiding cover includes a nozzle outlet located between the nozzle and the carrying surface. The controller is coupled to the printing head module to control a hot-melt material transmitting to the nozzle, and the heating element is configured to heat the nozzle so the hot-melt material is melted and dispensed on the carrying surface to form a three dimensional object.

Abstract: A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode.

Abstract: A semiconductor manufacturing equipment includes a processing chamber, at least one reflector and at least one electromagnetic wave emitting device. The reflector is present in the processing chamber. The electromagnetic wave emitting device is present between the reflector and a wafer in the processing chamber. The electromagnetic wave emitting device is configured to emit a spectrum of electromagnetic wave to the wafer. The reflector has a relative reflectance to Al2O3 with respect to the spectrum of electromagnetic wave, and the relative reflectance of the reflector is in a range from about 70% to about 120%.

Abstract: An apparatus for cleaning wafers includes a chamber, a rotatable substrate holder inside the chamber, a nozzle above the rotatable substrate holder, a cover facing downward and fluidly coupled with the nozzle. The rotatable substrate holder is configured to mount one or more semiconductor wafers on the rotatable substrate holder. The nozzle is configured to spray a cleaning medium onto the one or more semiconductor wafers. The cover is of a shape having a top edge with a top cross-sectional area and a bottom edge with a bottom cross-sectional area.

Abstract: A solar absorption structure including a base, a reflective layer, a light interference layer and an absorption layer is provided. The reflective layer is disposed on the base, wherein a material of the reflective layer includes metallic glass. The light interference layer is disposed on the reflective layer, and the reflective layer is located between the base and the light interference layer. The absorption layer is disposed on the light interference layer, wherein the light interference layer is located between the reflective layer and the absorption layer, and a material of the absorption layer includes metallic glass.

Abstract: An LED die includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a transparent conductive layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, the second semiconductor layer and the transparent conductive layer are successively formed on the substrate. The first electrode and the second electrode respectively is formed on the first semiconductor layer and the transparent conductive layer. A plurality of grooves defined on the first semiconductor layer, and a plurality of hole groups defined on the second semiconductor layer. The present disclosure also provides a method of manufacturing the LED die.