Patents by Inventor Chia-Hung Huang
Chia-Hung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8629534Abstract: A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.Type: GrantFiled: June 25, 2013Date of Patent: January 14, 2014Assignee: Advanced Optoelectronics Technology, Inc.Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8604503Abstract: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.Type: GrantFiled: August 30, 2012Date of Patent: December 10, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Chia-Hung Huang, Shih-Cheng Huang, Po-Min Tu, Ya-Wen Lin, Shun-Kuei Yang
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Publication number: 20130285216Abstract: A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.Type: ApplicationFiled: June 25, 2013Publication date: October 31, 2013Inventors: SHIH-CHENG HUANG, PO-MIN TU, SHUN-KUEI YANG, CHIA-HUNG HUANG
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Publication number: 20130280922Abstract: A method of orienting a semiconductor wafer. The method includes rotating a wafer about a central axis; exposing a plurality of edge portions of the rotating wafer to light having a predetermined wavelength from one or more light sources; detecting a subsurface mark in one of the plurality of edge portions of the rotating wafer; and orienting the wafer using the detected subsurface mark as a reference.Type: ApplicationFiled: April 18, 2012Publication date: October 24, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chin-Ming LIN, Wan-Lai CHEN, Chia-Hung HUANG, Chi-Ming YANG, Chin-Hsiang LIN
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Patent number: 8563340Abstract: A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.Type: GrantFiled: August 24, 2011Date of Patent: October 22, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8536597Abstract: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.Type: GrantFiled: August 22, 2011Date of Patent: September 17, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8536590Abstract: A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.Type: GrantFiled: May 23, 2011Date of Patent: September 17, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
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Publication number: 20130234150Abstract: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.Type: ApplicationFiled: August 30, 2012Publication date: September 12, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: CHIA-HUNG HUANG, SHIH-CHENG HUANG, PO-MIN TU, YA-WEN LIN, SHUN-KUEI YANG
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Patent number: 8519419Abstract: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.Type: GrantFiled: June 29, 2011Date of Patent: August 27, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8501582Abstract: A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed.Type: GrantFiled: December 21, 2010Date of Patent: August 6, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8492304Abstract: A manufacturing method of an iron complex is mixing ferric chloride and at least one chelating agent with a solvent, wherein Fe3+ ions of ferric chloride is reacted with the at least one chelating agent to form an iron complex Fe[R1]a[R2]b[H2O]c3+ or Fe[R1]a[H2O]c3+, wherein the at least one chelating agent is selected from a group including ethylenediamine, 1,10-phenanthroline, 2,2?-Bipyridine, diethylenetriamine, triethylenetetraamine, phenanthroline, or bipyridine. Moreover, a method for producing an iron oxide catalyst is mixing ferric chloride, at least one chelating agent and the support with a solvent to form an iron complex, which is incorporated with the support. Following, a drying step and a heat treatment step are processed to get the iron oxide catalyst.Type: GrantFiled: December 30, 2009Date of Patent: July 23, 2013Assignee: National Cheng Kung UniversityInventors: Weng-Sing Hwang, Shyh-Jiun Liu, Chia-Hung Huang, Chun-Kai Huang
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Publication number: 20130161652Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.Type: ApplicationFiled: August 8, 2012Publication date: June 27, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: Ya-Wen LIN, Po-Min TU, Shih-Cheng HUANG, Chia-Hung HUANG, Shun-Kuei YANG
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Patent number: 8466033Abstract: A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.Type: GrantFiled: March 21, 2011Date of Patent: June 18, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8461666Abstract: A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.Type: GrantFiled: December 4, 2012Date of Patent: June 11, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang
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Patent number: 8461619Abstract: An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.Type: GrantFiled: February 16, 2012Date of Patent: June 11, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Chia-Hung Huang, Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang
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Patent number: 8450749Abstract: A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.Type: GrantFiled: January 7, 2011Date of Patent: May 28, 2013Assignee: Advanced Optoelectronics Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang
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Publication number: 20130109580Abstract: Peptide ligands are found. All of the peptide ligands have high-affinity against a tumor biomarker, GRP-78. Phage display library is used for screening out the peptide ligands. The peptide ligands can be labeled with a luminescent or a radioactive material to be used as probes for detecting tumor.Type: ApplicationFiled: October 28, 2011Publication date: May 2, 2013Applicant: ATOMIC ENERGY CONCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Chia-Hung Huang, Shui-Cheng Lee, Pei-Tzu Ku, Ker-Jer Huang
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Patent number: 8394653Abstract: A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.Type: GrantFiled: August 24, 2011Date of Patent: March 12, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Ya-Wen Lin, Chia-Hung Huang, Shun-Kuei Yang
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Publication number: 20130032779Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.Type: ApplicationFiled: April 26, 2012Publication date: February 7, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: Chia-Hung HUANG, Shih-Cheng Huang, Po-Min TU, Shun-Kuei YANG, Ya-Wen LIN
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Patent number: 8349742Abstract: A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.Type: GrantFiled: January 26, 2011Date of Patent: January 8, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang