Patents by Inventor Chia-Lin Yu

Chia-Lin Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100001257
    Abstract: A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 7, 2010
    Inventors: Chen-Hua Yu, Hung-Ta Lin, Ding-Yuan Chen, Wen-Chih Chiou, Chia-Lin Yu
  • Publication number: 20100001302
    Abstract: A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.
    Type: Application
    Filed: July 1, 2008
    Publication date: January 7, 2010
    Inventors: Chen-Hua Yu, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu
  • Publication number: 20090280632
    Abstract: MOSFETs having stacked metal gate electrodes and methods of making the same are provided. The MOSFET gate electrode includes a gate metal layer formed atop a high-k gate dielectric layer. The metal gate electrode is formed through a low oxygen content deposition process without charged-ion bombardment to the wafer substrate. Metal gate layer thus formed has low oxygen content and may prevent interfacial oxide layer regrowth. The process of forming the gate metal layer generally avoids plasma damage to the wafer substrate.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 12, 2009
    Inventors: Cheng-Tung Lin, Yung-Sheng Chiu, Hsiang-Yi Wang, Chia-Lin Yu, Chen-Hua Yu
  • Publication number: 20090272975
    Abstract: A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.
    Type: Application
    Filed: August 11, 2008
    Publication date: November 5, 2009
    Inventors: Ding-Yuan Chen, Wen-Chih Chiou, Chia-Lin Yu, Chen-Hua Yu