Patents by Inventor Chia-Ta Hsieh
Chia-Ta Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961890Abstract: A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.Type: GrantFiled: August 12, 2021Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Fu Lin, Chia-Ta Hsieh, Tsung-Hao Yeh
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Patent number: 11950424Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.Type: GrantFiled: June 7, 2021Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yu-Ting Tsai, Ching-Tzer Weng, Tsung-Hua Yang, Kao-Chao Lin, Chi-Wei Ho, Chia-Ta Hsieh
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Publication number: 20240097027Abstract: A semiconductor structure includes a semiconductor substrate, first to third isolation structures, and a conductive feature. The first to third isolation structures are over the semiconductor substrate and spaced apart from each other. The semiconductor substrate comprises a region surrounded by a sidewall of the first isolation structure and a first sidewall of the second isolation structure. The conductive feature extends vertically in the semiconductor substrate and between the between the second and third isolation structures, wherein the conductive feature has a rounded corner adjoining a second sidewall of the second isolation structure opposite the first sidewall of the second isolation structure.Type: ApplicationFiled: December 1, 2023Publication date: March 21, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming PAN, Chia-Ta HSIEH, Po-Wei LIU, Yun-Chi WU
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Patent number: 11903192Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first gate structure over a substrate and laterally surrounded by a first sidewall spacer. The first gate structure protrudes outward from a top of the first sidewall spacer. A second gate structure is over the substrate and is laterally surrounded by a second sidewall spacer. The first gate structure has a first height that is larger than a second height of the second gate structure. The first sidewall spacer has a first cross-sectional profile that is a different shape and a different size than a second cross-sectional profile of the second sidewall spacer.Type: GrantFiled: July 21, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Josh Lin, Chia-Ta Hsieh, Chen-Ming Huang, Chi-Wei Ho
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Patent number: 11855201Abstract: A semiconductor structure includes a semiconductor substrate, a transistor, a plurality of isolation structures, and a conductive feature. The transistor is over the semiconductor substrate. The isolation structures are over the semiconductor substrate. The isolation structures define a semiconductor ring of the semiconductor substrate surrounding the transistor. The conductive feature extends vertically in the semiconductor substrate and surrounds the transistor and semiconductor ring. The conductive feature has a rounded corner facing the semiconductor ring from a top view.Type: GrantFiled: September 26, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming Pan, Chia-Ta Hsieh, Po-Wei Liu, Yun-Chi Wu
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Patent number: 11798836Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.Type: GrantFiled: June 17, 2021Date of Patent: October 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Yu Yang, Po-Wei Liu, Yun-Chi Wu, Yu-Wen Tseng, Chia-Ta Hsieh, Ping-Cheng Li, Tsung-Hua Yang, Yu-Chun Chang
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Publication number: 20230307231Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.Type: ApplicationFiled: June 2, 2023Publication date: September 28, 2023Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
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Patent number: 11705328Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.Type: GrantFiled: March 22, 2022Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
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Publication number: 20230052949Abstract: A semiconductor device includes a semiconductor film and a gate structure on the semiconductor film. The gate structure includes a multi-stepped gate dielectric on the semiconductor film and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.Type: ApplicationFiled: August 12, 2021Publication date: February 16, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Fu LIN, Chia-Ta HSIEH, Tsung-Hao YEH
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Publication number: 20230019614Abstract: A semiconductor structure includes a semiconductor substrate, a transistor, a plurality of isolation structures, and a conductive feature. The transistor is over the semiconductor substrate. The isolation structures are over the semiconductor substrate. The isolation structures define a semiconductor ring of the semiconductor substrate surrounding the transistor. The conductive feature extends vertically in the semiconductor substrate and surrounds the transistor and semiconductor ring. The conductive feature has a rounded corner facing the semiconductor ring from a top view.Type: ApplicationFiled: September 26, 2022Publication date: January 19, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming PAN, Chia-Ta HSIEH, Po-Wei LIU, Yun-Chi WU
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Publication number: 20220406652Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.Type: ApplicationFiled: June 17, 2021Publication date: December 22, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Yu YANG, Po-Wei LIU, Yun-Chi WU, Yu-Wen TSENG, Chia-Ta HSIEH, Ping-Cheng LI, Tsung-Hua YANG, Yu-Chun CHANG
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Publication number: 20220392912Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.Type: ApplicationFiled: June 7, 2021Publication date: December 8, 2022Inventors: Yu-Ting Tsai, Ching-Tzer Weng, Tsung-Hua Yang, Kao-Chao Lin, Chi-Wei Ho, Chia-Ta Hsieh
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Patent number: 11462639Abstract: A method for forming a semiconductor is provided. The method includes etching a trench in a semiconductor substrate, in which the trench surrounds a device region of the semiconductor substrate; forming a conductive feature in the trench; and forming a transistor on the device region of the semiconductor substrate after forming the conductive feature.Type: GrantFiled: December 26, 2019Date of Patent: October 4, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming Pan, Chia-Ta Hsieh, Po-Wei Liu, Yun-Chi Wu
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Publication number: 20220216053Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.Type: ApplicationFiled: March 22, 2022Publication date: July 7, 2022Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
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Patent number: 11289330Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.Type: GrantFiled: July 30, 2020Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
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Publication number: 20210351195Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first gate structure over a substrate and laterally surrounded by a first sidewall spacer. The first gate structure protrudes outward from a top of the first sidewall spacer. A second gate structure is over the substrate and is laterally surrounded by a second sidewall spacer. The first gate structure has a first height that is larger than a second height of the second gate structure. The first sidewall spacer has a first cross-sectional profile that is a different shape and a different size than a second cross-sectional profile of the second sidewall spacer.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Inventors: Josh Lin, Chia-Ta Hsieh, Chen-Ming Huang, Chi-Wei Ho
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Patent number: 11075212Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip having a flash gate structure disposed over a substrate and including a control gate separated from a floating gate by an inter-electrode dielectric. One or more first sidewall spacers laterally surround the flash gate structure. The inter-electrode dielectric is directly between the one or more first sidewall spacers. A logic gate structure is disposed over the substrate and is laterally surrounded by one or more second sidewall spacers having a smaller height than the one or more first sidewall spacers.Type: GrantFiled: March 25, 2020Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Josh Lin, Chia-Ta Hsieh, Chen-Ming Huang, Chi-Wei Ho
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Publication number: 20210202737Abstract: A method for forming a semiconductor is provided. The method includes etching a trench in a semiconductor substrate, in which the trench surrounds a device region of the semiconductor substrate; forming a conductive feature in the trench; and forming a transistor on the device region of the semiconductor substrate after forming the conductive feature.Type: ApplicationFiled: December 26, 2019Publication date: July 1, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Ming PAN, Chia-Ta HSIEH, Po-Wei LIU, Yun-Chi WU
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Publication number: 20210098253Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.Type: ApplicationFiled: July 30, 2020Publication date: April 1, 2021Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
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Patent number: 10964050Abstract: A method for identifying a foreground object in an image and an electronic device are provided. The method includes: dividing a first image and a second image to obtain first image blocks in the first image and second image blocks in the second image; comparing the first image blocks with the second image blocks to obtain a plurality of disparity values respectively corresponding to the first image blocks, and generating a disparity image including the disparity values; comparing each disparity value in the disparity image with a first threshold to form a disparity depth image, and selecting a selected block from the disparity depth image to form a first region; and mapping the first region into the first image to identify a mapped object and identify the object as a foreground object.Type: GrantFiled: March 7, 2019Date of Patent: March 30, 2021Assignee: Wistron CorporationInventors: Chia-Ta Hsieh, Yu-Yen Chen