Abstract: An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second dielectric region are on opposite sides of, and in contact with, the semiconductor strip. Each of the first dielectric region and the second dielectric region includes a first portion level with the semiconductor strip, and a second portion lower than the semiconductor strip. The second portion further includes a portion overlapped by the semiconductor strip.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy of a power unit of a intelligent entrance guard in a wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receiver coil of a powerless smart key; capturing a face image of an user and storing the face image in a second storage unit of the powerless smart key; controlling a wireless transmit unit of the powerless smart key to transmit a wireless signal containing the face image to the intelligent entrance guard; obtaining a predefined face image from a first storage unit of the intelligent entrance guard and comparing the face image with the predefined face image; unlocking the intelligent entrance guard when the face image matches with the predefined face image and not unlocking the intelligent entrance guard when the face image does not match with the predefined face image.

Abstract: A process of manufacturing a Fin-FET device, and the process includes following steps. An active fin structure and a dummy fin structure are formed from a substrate, and an isolation layer is covered over the active fin structure and the dummy fin structure. Then, the isolation layer above the dummy fin structure is removed, and the dummy fin structure is selectively etched, which a selective ratio of the dummy fin structure to the isolation layer is over 8.

Abstract: An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second dielectric region are on opposite sides of, and in contact with, the semiconductor strip. Each of the first dielectric region and the second dielectric region includes a first portion level with the semiconductor strip, and a second portion lower than the semiconductor strip. The second portion further includes a portion overlapped by the semiconductor strip.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy of a power unit of a intelligent entrance guard in a wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receiver coil of a powerless smart key; capturing a fingerprint image of an user and storing the fingerprint image in a second storage unit of the powerless smart key; controlling a wireless transmit unit of the powerless smart key to transmit a wireless signal containing the fingerprint image to the intelligent entrance guard; obtaining a predefined fingerprint image from a first storage unit of the intelligent entrance guard and comparing the fingerprint image with the predefined fingerprint image; unlocking the intelligent entrance guard when the fingerprint image matches with the predefined fingerprint image and not unlocking the intelligent entrance guard when the fingerprint image does not match with the predefined fingerprint image.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy by wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receive coil; capturing a vein image of a part of a user via a number of small cameras by Infrared scanning technology and filtering noises from the vein image to get a filtered vein image; transmitting a wireless signal containing the filtered vein image to an intelligent entrance guard; comparing the filtered vein image with a predefined vein image; unlocking the intelligent entrance guard when the filtered vein image matches with the predefined vein image and not unlocking the intelligent entrance guard when the filtered vein image does not match with the predefined vein image.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy of a power unit of a intelligent entrance guard in a wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receiver coil of a powerless smart key; capturing a palm print image and storing the palm print image in a second storage unit of the powerless smart key; controlling a wireless transmit unit of the powerless smart key to transmit a wireless signal containing the palm print image to the intelligent entrance guard; obtaining a predefined palm print image from a first storage unit and comparing the palm print image with the predefined palm print image; unlocking the intelligent entrance guard when the palm print image matches with the predefined palm print image and not unlocking the intelligent entrance guard when the palm print image does not match with the predefined palm print image.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy of an intelligent entrance guard by wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receive coil of a powerless smart key; scanning an eye of a user to recognize an iris image of the user and storing the iris image in a second storage unit of the powerless smart key; controlling a wireless transmit unit of the powerless smart key to transmit a wireless signal containing the iris image to the intelligent entrance guard; obtaining a predefined iris image from a first storage unit of the intelligent entrance guard and comparing the iris image with the predefined iris image; unlocking the intelligent entrance guard when the iris image matches with the predefined iris image and not unlocking the intelligent entrance guard when the iris image does not match with the predefined iris image.

Abstract: An intelligent entrance guard unlocking method includes: transmitting electric energy of a power unit of a intelligent entrance guard in a wireless electromagnetic radiation via a transmit coil; receiving the electric energy via a receiver coil of a powerless smart key; capturing a face image of an user and storing the face image in a second storage unit of the powerless smart key; controlling a wireless transmit unit of the powerless smart key to transmit a wireless signal containing the face image to the intelligent entrance guard; obtaining a predefined face image from a first storage unit of the intelligent entrance guard and comparing the face image with the predefined face image; unlocking the intelligent entrance guard when the face image matches with the predefined face image and not unlocking the intelligent entrance guard when the face image does not match with the predefined face image.

Abstract: A wireless communication method and device are provided. The wireless communication method includes the steps of receiving a Traffic Flow Template (TFT) which is assigned by a network; determining whether a first evaluation precedence index (EPI) corresponding to a new packet filter of the TFT is the same as a second EPI corresponding to an old packet filter which belongs to an evolved packet system (EPS) bearer or a packet data protocol (PDP) context; determining whether the new packet filter belongs to the EPS bearer or the PDP context when the first EPI is the same as the second EPI; and replacing the old packet filter with the new packet filter without deleting the EPS bearer or the PDP context when the new packet filter belongs to the EPS bearer or the PDP context.

Abstract: A method for handling a PDN disconnection request performed by a communications apparatus communicating with a network device includes transmitting a PDN disconnect request message to the network device to request to disconnect a predetermined PDN connection; receiving a PDN disconnect reject message from the network device; obtaining a reject cause carried in the PDN disconnect reject message; and locally deactivating all other PDN connection(s) other than the predetermined PDN connection when the reject cause carried in the PDN disconnect reject message indicates that the last PDN disconnection is not allowed.

Abstract: A vehicle electronic key system for unlocking a vehicle includes an electronic key and a vehicle controlling device. The electronic key includes a first controller, a signal transmitting module configured to collet and transmit speech signals, and a wireless charging receiving coil configured to transmit electromagnetic signals to the first controller. The vehicle controlling device includes a second controller configured to authenticate the speech signals and unlock the vehicle, a signal receiving module configured to receive speech signals sent by the signal transmitting module and send the speech signals to the second controller, and a wireless charging transmitting coil configured to transmit the electromagnetic signals to the wireless charging receiving coil. The second controller is further configured to drive the wireless charging transmitting coil.

Abstract: A photographic assist apparatus of a mobile communications unit includes a tank, a shaft and a rod. A groove is formed at the bottom of the inner side of the tank. The shape of the groove is designed corresponding to the shape of the rod, for accommodating the rod. A first and a second button portions are disposed at two ends of the rod respectively. And a central portion is located between the first and the second button portions. The shaft is disposed in the groove. The rod has a hole located at the central portion thereof for the shaft setting through. When a user presses the first button portion, the rod is rotated to turn a small rotation angle by taking the shaft as an axis, to drive the second button portion moving, and the rotation angle is limited by the gap between the groove and the rod.

Abstract: A keyswitch module includes a bottom plate, a movable plate, a keycap, and a connecting assembly. The moving plate is stacked with the bottom plate and capable of moving between a first position and a second position relative to the bottom plate. The movable plate moves a horizontal stroke from the first position to the second position. The connecting assembly is operatively connected to the bottom plate and connected to the keycap. A forced portion of the connecting assembly is configured to be moved by a forcing structure of the movable plate to make the keycap move between an opening position and a closing position relative to the bottom plate. When the movable plate is located at the first position, the forcing structure and the forced portion are separated by a distance, and the keycap is located at the opening position.

Abstract: A semiconductor device, including: a P-type substrate; an N-type region, contacting with the P-type substrate; a N+-type doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting with the N-type region; and a N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region.

Abstract: A method includes etching a semiconductor substrate to form a semiconductor strip and trenches on opposite sidewalls of the semiconductor strip. A spacer is formed on a sidewall of the semiconductor strip which is used as an etching mask to extend the trenches down into the semiconductor substrate. A dielectric material is filled into the trenches and then planarized to form insulation regions in the trenches. The insulation regions are recessed. After the recessing, top surfaces of the insulation regions are lower than a top surface of the semiconductor strip and a gate structure may be formed thereon.

Abstract: A semiconductor device, including: a P-type substrate; an N-type region, contacting with the P-type substrate; a N+-type doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting with the N-type region; and a N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region.

Abstract: A method of making a semiconductor structure, the method including forming a conductive layer over a substrate. The method further includes forming a first imaging layer over the conductive layer, where the first imaging layer comprises a plurality of layers. The method further includes forming openings in the first imaging layer to expose a first set of areas of the conductive layer. The method further includes implanting ions into each area of the first set of area. The method further includes forming a second imaging layer over the conductive layer. The method further includes forming openings in the second imaging layer to expose a second set of areas of the conductive layer, wherein the second set of areas is different from the first set of areas. The method further includes implanting ions into the each area of the second set of areas.

Abstract: An integrated circuit structure includes a semiconductor substrate, an insulation region extending into the semiconductor substrate, and a semiconductor strip between two opposite portions of the insulation region. The semiconductor strip includes an upper portion higher than top surfaces of the insulation regions and a lower portion in the insulation region. The lower portion has a sidewall including a first sidewall portion having a first slope and a second sidewall portion over and connected to the first sidewall portion. The second sidewall portion has a second slope smaller than the first slope.