Abstract: Provided are hard carbon beads, their preparation method, and an energy storage device comprising the same. Microwave heating is used to synthesize cross-linked phenolic formaldehyde for reducing energy consumption and controlling the crosslinking density of cured phenolic formaldehyde. The problems caused by high temperature heating and hydrothermal process for curing resin can be solved by the instant disclosure, which can increase the economic values of electrode and energy storage device comprising the hard carbon beads.

Abstract: A virtual reality device is provided. The virtual reality device includes a main body portion, a plurality of first-type antennas, and a plurality of second-type antennas. The main body portion has a first side eyeglass frame, a second side eyeglass frame, and a connection part. The connection part is connected to the first side eyeglass frame and the second side eyeglass frame. The second-type antennas and the corresponding first-type antennas are respectively disposed on a first side of the first side eyeglass frame, on a second side of the second side eyeglass frame, and on the connection part. The first side of the first side eyeglass frame is opposite to the second side of the second side eyeglass frame.

Abstract: A fast-transient buffer is shown. The fast-transient buffer has a flipped voltage follower coupled between the input terminal and the output terminal of the fast-transient buffer, and a first MOS transistor coupled to the flipped voltage follower as well as the output terminal of the fast-transient buffer. The first MOS transistor regulates the output voltage of the output terminal of the fast-transient buffer, in the opposite direction in comparison with an output voltage regulation direction due to the flipped voltage follower.

Abstract: An antenna structure includes a first signal source, a second signal source, a first radiator, a second radiator, a third radiator, a first circuit, and a second circuit. The first signal source is used to generate a first wireless signal, and the second signal source is used to generate a second wireless signal. The first radiator is coupled to the first signal source to receive the first wireless signal, and the second radiator is coupled to the second signal source to receive the second wireless signal. The first circuit has a first end coupled to the third radiator and a second end coupled to the first radiator or the first signal source. The second circuit has a first end coupled to the third radiator and a second end coupled to the second radiator or the second signal source.

Abstract: Provided is a memory device and a method of forming the same. The method includes: providing a substrate having multiple active regions; forming a first layer stack on the substrate; patterning the first layer stack to form multiple recesses in the first layer stack; forming a liner layer on the first layer stack to cover the recesses; performing an etching process to remove a portion of the liner layer and the first layer stack below the recesses, so as to extend the recesses downward to form multiple openings, wherein the openings respectively expose the active regions; respectively forming multiple conductive structures in the openings; forming a second layer stack on the conductive structures; and patterning the second layer stack and the conductive structures to form multiple bit-line structures and bit-line contacts, respectively.

Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.

Abstract: A neural network based method places flexible blocks on a chip canvas in an integrated circuit (IC) design. The neural network receives an input describing geometric features of a flexible block to be placed on the chip canvas. The geometric features includes an area size and multiple aspect ratios. The neural network generates a probability distribution over locations on the chip canvas and the aspect ratios of the flexible block. Based on the probability distribution, a location on the chip canvas is selected for placing the flexible block with a chosen aspect ratio.

Abstract: A neural network is used to place macros on a chip canvas in an integrated circuit (IC) design. The macros are first clustered into multiple macro clusters. Then the neural network generates a probability distribution over locations on a grid and aspect ratios of a macro cluster. The grid represents the chip canvas and is formed by rows and columns of grid cells. The macro cluster is described by at least an area size, aspect ratios, and wire connections. Action masks are generated for respective ones of the aspect ratios to block out a subset of unoccupied grid cells based on design rules that optimize macro placement. Then, by applying the action masks on the probability distribution, a masked probability distribution is generated. Based on the masked probability distribution, a location on the grid is selected for placing the macro cluster with a chosen aspect ratio.

Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.

Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.

Abstract: A motor control system with adjustable voltage harmonic and method for correcting the motor control system is disclosed. Based on the input modulation order, the motor control system drives and controls a motor. The motor control system includes: a harmonic voltage weight selection unit, used to select weight values of the harmonic wave corresponding to the modulation order, a modulation signal selection unit, used to select the output pulse duty ratio modulation signal corresponding to the modulation order. Based on the weight values of the harmonic wave, the output pulse duty ratio modulation signal and the pulse modulation carrier frequency signal, a pulse modulation part generates a control signal. Based on the control signal, the inverter circuit adds the harmonic voltage into the motor-driving voltage that drives the motor, so as to improve the noise condition of the motor.

Abstract: A display panel and a spliced display are provided. The display panel includes a substrate, a plurality of light-emitting elements, a driving circuit, and an optical sensor. The substrate includes a through hole, and the through hole includes a hole. The plurality of the light-emitting elements are disposed on the substrate. The through hole is located in a region between two of the plurality of the light-emitting elements. The driving circuit is disposed on the substrate and electrically connected to the plurality of the light-emitting elements. The optical sensor is disposed corresponding to the through hole and receives sensing light through the hole. The width W of the hole meets the equation of H?W<D. H is the depth of the hole, and D is the distance between the two of the plurality of the light-emitting elements.

Abstract: Certain embodiments are directed to modified or variant Cas9 proteins, and/or methods of using the same.

Abstract: The present invention provides a filtering circuit comprising a poly phase filter and a quadrature phase detector. The poly phase filter comprises a first path, a second path, a third path and a fourth path. The first path is configured to receive a first input signal to generate a first clock signal. The second path comprising a first adjustable delay circuit is configured to receive the first input signal to generate a second clock signal. The third path comprising a second adjustable delay circuit is configured to receive a second input signal to generate a third clock signal. The fourth path is configured to receive the second input signal to generate a fourth clock signal. The quadrature phase detector is configured to detect phases of these clock signals to generate control signals to control the first adjustable delay circuit and the second adjustable delay circuit.

Abstract: A solid state disk, a data transmitting method and an intermediary controller thereof are provided. The solid state disk includes at least two flash memories, a SSD controller and an intermediary controller. The intermediary controller is connected between the flash memories and the SSD controller. The intermediary controller includes at least two flash interfaces, a customized interface and a data buffering unit. The flash interfaces are connected to the flash memories. The customized interface is connected to the SSD controller. The intermediary controller has a first clock domain and a second clock domain. The first clock domain is used for transmitting data from the flash memories to the data buffering unit. The second clock domain is used for transmitting data from the data buffering unit to the SSD controller. A frequency of the second clock domain is higher than a frequency of the first clock domain.

Abstract: In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode, a gate dielectric layer is formed in the gate space, conductive layers are formed on the gate dielectric layer to fully fill the gate space, the gate dielectric layer and the conducive layers are recessed to form a recessed gate electrode, and a contact metal layer is formed on the recessed gate electrode. The recessed gate electrode does not include tungsten, and the contact metal layer includes tungsten.

Abstract: Some implementations described herein provide a nanostructure transistor including inner spacers between a gate structure and a source/drain region. The inner spacers, formed in cavities at end regions of sacrificial nanosheets during fabrication of the nanostructure transistor, include concave-regions that face the source/drain region. Formation techniques include forming the sacrificial nanosheets and inner spacers to include certain geometric and/or dimensional properties, such that a likelihood of defects and/or voids within the inner spacers and/or the gate structure are reduced.

Abstract: A heat dissipation system suitable for a portable electronic device with two heat sources is provided. The heat dissipation system includes a fan, two heat dissipation fin sets, a gate, a first heat pipe, a second heat pipe, and a control unit. The fan is a centrifugal fan and has a main outlet and a sub outlet. The heat dissipation fin sets are disposed respectively at the main outlet and the sub outlet, and the gate is disposed at the sub outlet. The first heat pipe thermally contacts the heat sources and the heat dissipation fin set located at the main outlet. The second heat pipe thermally contacts one of the heat sources and the two heat dissipation fin sets. The control unit is electrically connected to the gate to drive the gate to open or close the sub outlet according to a load of the two heat sources.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.