Patents by Inventor Chien-Hsun Wang

Chien-Hsun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210296243
    Abstract: A package has a first semiconductor die, a second semiconductor die, a redistribution structure and a metallic bolstering pattern. The second semiconductor die is disposed beside the first semiconductor die and spaced apart from the first semiconductor die with a distance. The redistribution structure is disposed over the first semiconductor die and the second semiconductor die and is electrically connected with the first and second semiconductor dies. The metallic bolstering pattern is disposed between the redistribution structure and the first and second semiconductor dies. The metallic bolstering pattern is disposed on the redistribution structure and located over the first and second semiconductor dies, and the metallic bolstering pattern extends across the distance between the first and second semiconductor dies and extends beyond borders of the first and second semiconductor dies.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 23, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jiun-Yi Wu, Chien-Hsun Lee, Shou-Yi Wang, Chien-Hsun Chen
  • Patent number: 11114934
    Abstract: A power supply device includes an inductor, a switch, a power supply, and a snubber circuit. A first terminal of the switch is coupled to a first terminal of the inductor. A first terminal of the power supply is coupled to a second terminal of the witch. A first terminal of the snubber circuit is coupled to the first terminal of the switch at a first voltage output terminal. A second terminal of the snubber circuit is electrically coupled to a second terminal of the power supply at a second voltage output terminal, in which the inductor, the switch, the power supply, and the snubber circuit are configured to cooperate to generate an output voltage at the first voltage output terminal and the second voltage output terminal.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: September 7, 2021
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Wei-Hsun Lai, Wei-Cheng Lin, Po-Cheng Chiu, Chien-Yu Wang
  • Patent number: 11101209
    Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Shi Liu, Chien-Hsun Lee, Jiun Yi Wu, Hao-Cheng Hou, Hung-Jen Lin, Jung Wei Cheng, Tsung-Ding Wang, Yu-Min Liang, Li-Wei Chou
  • Publication number: 20200335388
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
  • Patent number: 10707114
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: July 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Bing-Hung Chen, Chien-Hsun Wang, Cheng-Tung Lin, Chih-Tang Peng, De-Fang Chen, Huan-Just Lin, Li-Ting Wang, Yung-Cheng Lu
  • Patent number: 10693003
    Abstract: An embodiment of a method for forming a transistor that includes providing a semiconductor substrate having a source/drain region is provided where a first SiGe layer is formed over the source/drain region. A thermal oxidation is performed to convert a top portion of the first SiGe layer to an oxide layer and a bottom portion of the first SiGe layer to a second SiGe layer. A thermal diffusion process is performed after the thermal oxidation is performed to form a SiGe area from the second SiGe layer. The SiGe area has a higher Ge concentration than the first SiGe layer.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: June 23, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hao Chang, Jeff J. Xu, Chien-Hsun Wang, Chih Chieh Yeh, Chih-Hsiang Chang
  • Patent number: 10601649
    Abstract: Stack switching detection may be provided. First, a request to connect to a server may be received by the server from a first network device. Then the server may send, in response to receiving the request, a query to the first network device for a serial number of any other network device connected to the first network device. The first network device may have a first serial number. The server may receive, from the first network device, a response to the query. The response may include a second serial number corresponding to a second network device connected to the first network device. Next, the server may determine, based on the response, that the first network device and the second network device comprise a stack unit. The server may then provision the stack unit by provisioning the first network device and provisioning the second network device through the first network device.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: March 24, 2020
    Assignee: Cisco Technology, Inc.
    Inventors: Chiragkumar P. Desai, John Manuel Lau Moy, Chien-Hsun Wang, Prakash Jhurani
  • Patent number: 10553718
    Abstract: A device structure includes: a core structure formed on a support, and a shell material formed on the core structure and surrounding at least part of the core structure. The shell material is associated with a first bandgap; the core structure is associated with a second bandgap; and the first bandgap is smaller than the second bandgap. The shell material and the core structure are configured to form a quantum-well channel in the shell material.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: February 4, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Carlos H. Diaz, Chun-Hsiung Lin, Huicheng Chang, Syun-Ming Jang, Chien-Hsun Wang, Mao-Lin Huang
  • Patent number: 10418271
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: September 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Cheng-Tung Lin, Chih-Tang Peng, Chien-Hsun Wang, Bing-Hung Chen, Huan-Just Lin, Yung-Cheng Lu
  • Patent number: 10325994
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen, Li-Ting Wang, Chien-Hsun Wang, Huan-Just Lin, Yung-Cheng Lu, Tze-Liang Lee
  • Publication number: 20180350984
    Abstract: In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Carlos H. DIAZ, Chun-Hsiung LIN, Huicheng CHANG, Syun-Ming JANG, Chien-Hsun WANG, Mao-Lin HUANG
  • Publication number: 20180350655
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
  • Publication number: 20180240882
    Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.
    Type: Application
    Filed: April 23, 2018
    Publication date: August 23, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tang PENG, Tai-Chun HUANG, Teng-Chun TSAI, Cheng-Tung LIN, De-Fang CHEN, Li-Ting WANG, Chien-Hsun WANG, Huan-Just LIN, Yung-Cheng LU, Tze-Liang LEE
  • Publication number: 20180136182
    Abstract: A multi-gas analysis includes a semiconductor gas sensor driven by a constant resistance driver circuit with a driving current to obtain a sensing output of a gas in a gas sample. A processing unit is operable, based on a reference voltage from the constant resistance driver circuit associated with the driving current, in one of a gas-identification mode, where the gas is identified based on the sensing output obtained in response to fine variation of the operating temperature of the semiconductor gas sensor, and a gas-detection mode, where an analysis result indicative of the concentration of the gas is obtained based on the sensing output obtained in response to an optimal operating temperature of the semiconductor gas sensor.
    Type: Application
    Filed: November 14, 2016
    Publication date: May 17, 2018
    Inventor: Chien-Hsun WANG
  • Patent number: 9954069
    Abstract: A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The interlayer dielectric surrounds the barrier layer. As such, the source/drain region can be protected by the barrier layer from oxidation during manufacturing of the semiconductor device, e.g., the formation of the interlayer dielectric.
    Type: Grant
    Filed: March 30, 2016
    Date of Patent: April 24, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen, Li-Ting Wang, Chien-Hsun Wang, Huan-Just Lin, Yung-Cheng Lu, Tze-Liang Lee
  • Patent number: 9941394
    Abstract: The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: April 10, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chih-Tang Peng, De-Fang Chen, Hung-Ta Lin, Chien-Hsun Wang
  • Patent number: 9911812
    Abstract: According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: March 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Hsiung Lin, Carlos H. Diaz, Hui-Cheng Chang, Syun-Ming Jang, Mao-Lin Huang, Chien-Hsun Wang
  • Patent number: 9871101
    Abstract: A semiconductor structure, and methods for forming the semiconductor device are provided. In various embodiments, the semiconductor device includes a substrate, source/drain regions over the substrate, a plurality of nanowires over the substrate and sandwiched by the source/drain regions, a gate dielectric layer surrounding the plurality of nanowires, and a gate layer surrounding the gate dielectric layer.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: January 16, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Gerben Doornbos, Chun-Hsiung Lin, Chien-Hsun Wang, Carlos H. Diaz
  • Patent number: 9865460
    Abstract: A method for forming a semiconductor device having a fin-type channel is provided. The method may include the following operations: forming a first buffer layer over a substrate; forming a first dielectric layer over the first buffer layer; patterning the first dielectric layer over the first buffer layer; forming a barrier layer over the first buffer layer; forming a second dielectric layer over the barrier layer; patterning the second dielectric layer over the barrier layer; forming a channel layer over the barrier layer; and patterning the second dielectric layer, such that at least a portion of the channel layer protrudes to form the fin-type channel.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: January 9, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chien-Hsun Wang, Chun-Hsiung Lin, Mao-Lin Huang
  • Patent number: 9853102
    Abstract: A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: December 26, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Li-Ting Wang, Cheng-Tung Lin, De-Fang Chen, Chih-Tang Peng, Chien-Hsun Wang, Hung-Ta Lin