Patents by Inventor Chien-Hsun Wang
Chien-Hsun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128232Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.Type: ApplicationFiled: December 28, 2023Publication date: April 18, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Ding Wang, Yen-Fu Su, Hao-Cheng Hou, Jung-Wei Cheng, Chien-Hsun Lee, Hsin-Yu Pan
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Patent number: 11961814Abstract: In an embodiment, a device includes: a semiconductor device; and a redistribution structure including: a first dielectric layer; a first grounding feature on the first dielectric layer; a second grounding feature on the first dielectric layer; a first pair of transmission lines on the first dielectric layer, the first pair of transmission lines being laterally disposed between the first grounding feature and the second grounding feature, the first pair of transmission lines being electrically coupled to the semiconductor device; a second dielectric layer on the first grounding feature, the second grounding feature, and the first pair of transmission lines; and a third grounding feature extending laterally along and through the second dielectric layer, the third grounding feature being physically and electrically coupled to the first grounding feature and the second grounding feature, where the first pair of transmission lines extend continuously along a length of the third grounding feature.Type: GrantFiled: January 31, 2022Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Hsun Chen, Shou-Yi Wang, Jiun Yi Wu, Chung-Shi Liu, Chen-Hua Yu
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Package structure comprising buffer layer for reducing thermal stress and method of forming the same
Patent number: 11961777Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.Type: GrantFiled: June 27, 2022Date of Patent: April 16, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Chen, Chien-Hsun Lee, Chung-Shi Liu, Hao-Cheng Hou, Hung-Jui Kuo, Jung-Wei Cheng, Tsung-Ding Wang, Yu-Hsiang Hu, Sih-Hao Liao -
Patent number: 11923315Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.Type: GrantFiled: July 12, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
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Publication number: 20240071999Abstract: A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.Type: ApplicationFiled: August 24, 2022Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tseng Hsing Lin, Chien-Hsun Lee, Tsung-Ding Wang, Jung-Wei Cheng, Hao-Cheng Hou, Sheng-Chi Lin, Jeng-An Wang, Yao-Cheng Wu
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Patent number: 11245033Abstract: In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.Type: GrantFiled: July 30, 2018Date of Patent: February 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Carlos H. Diaz, Chun-Hsiung Lin, Huicheng Chang, Syun-Ming Jang, Chien-Hsun Wang, Mao-Lin Huang
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Patent number: 11227788Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.Type: GrantFiled: July 6, 2020Date of Patent: January 18, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Teng-Chun Tsai, Bing-Hung Chen, Chien-Hsun Wang, Cheng-Tung Lin, Chih-Tang Peng, De-Fang Chen, Huan-Just Lin, Li-Ting Wang, Yung-Cheng Lu
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Publication number: 20200335388Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.Type: ApplicationFiled: July 6, 2020Publication date: October 22, 2020Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
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Patent number: 10707114Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.Type: GrantFiled: July 30, 2018Date of Patent: July 7, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Teng-Chun Tsai, Bing-Hung Chen, Chien-Hsun Wang, Cheng-Tung Lin, Chih-Tang Peng, De-Fang Chen, Huan-Just Lin, Li-Ting Wang, Yung-Cheng Lu
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Patent number: 10693003Abstract: An embodiment of a method for forming a transistor that includes providing a semiconductor substrate having a source/drain region is provided where a first SiGe layer is formed over the source/drain region. A thermal oxidation is performed to convert a top portion of the first SiGe layer to an oxide layer and a bottom portion of the first SiGe layer to a second SiGe layer. A thermal diffusion process is performed after the thermal oxidation is performed to form a SiGe area from the second SiGe layer. The SiGe area has a higher Ge concentration than the first SiGe layer.Type: GrantFiled: May 19, 2017Date of Patent: June 23, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Chang, Jeff J. Xu, Chien-Hsun Wang, Chih Chieh Yeh, Chih-Hsiang Chang
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Patent number: 10601649Abstract: Stack switching detection may be provided. First, a request to connect to a server may be received by the server from a first network device. Then the server may send, in response to receiving the request, a query to the first network device for a serial number of any other network device connected to the first network device. The first network device may have a first serial number. The server may receive, from the first network device, a response to the query. The response may include a second serial number corresponding to a second network device connected to the first network device. Next, the server may determine, based on the response, that the first network device and the second network device comprise a stack unit. The server may then provision the stack unit by provisioning the first network device and provisioning the second network device through the first network device.Type: GrantFiled: July 28, 2017Date of Patent: March 24, 2020Assignee: Cisco Technology, Inc.Inventors: Chiragkumar P. Desai, John Manuel Lau Moy, Chien-Hsun Wang, Prakash Jhurani
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Patent number: 10553718Abstract: A device structure includes: a core structure formed on a support, and a shell material formed on the core structure and surrounding at least part of the core structure. The shell material is associated with a first bandgap; the core structure is associated with a second bandgap; and the first bandgap is smaller than the second bandgap. The shell material and the core structure are configured to form a quantum-well channel in the shell material.Type: GrantFiled: March 14, 2014Date of Patent: February 4, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Carlos H. Diaz, Chun-Hsiung Lin, Huicheng Chang, Syun-Ming Jang, Chien-Hsun Wang, Mao-Lin Huang
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Patent number: 10418271Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.Type: GrantFiled: June 13, 2014Date of Patent: September 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Cheng-Tung Lin, Chih-Tang Peng, Chien-Hsun Wang, Bing-Hung Chen, Huan-Just Lin, Yung-Cheng Lu
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Patent number: 10325994Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.Type: GrantFiled: April 23, 2018Date of Patent: June 18, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen, Li-Ting Wang, Chien-Hsun Wang, Huan-Just Lin, Yung-Cheng Lu, Tze-Liang Lee
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Publication number: 20180350984Abstract: In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.Type: ApplicationFiled: July 30, 2018Publication date: December 6, 2018Inventors: Carlos H. DIAZ, Chun-Hsiung LIN, Huicheng CHANG, Syun-Ming JANG, Chien-Hsun WANG, Mao-Lin HUANG
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Publication number: 20180350655Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.Type: ApplicationFiled: July 30, 2018Publication date: December 6, 2018Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
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Publication number: 20180240882Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.Type: ApplicationFiled: April 23, 2018Publication date: August 23, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tang PENG, Tai-Chun HUANG, Teng-Chun TSAI, Cheng-Tung LIN, De-Fang CHEN, Li-Ting WANG, Chien-Hsun WANG, Huan-Just LIN, Yung-Cheng LU, Tze-Liang LEE
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Publication number: 20180136182Abstract: A multi-gas analysis includes a semiconductor gas sensor driven by a constant resistance driver circuit with a driving current to obtain a sensing output of a gas in a gas sample. A processing unit is operable, based on a reference voltage from the constant resistance driver circuit associated with the driving current, in one of a gas-identification mode, where the gas is identified based on the sensing output obtained in response to fine variation of the operating temperature of the semiconductor gas sensor, and a gas-detection mode, where an analysis result indicative of the concentration of the gas is obtained based on the sensing output obtained in response to an optimal operating temperature of the semiconductor gas sensor.Type: ApplicationFiled: November 14, 2016Publication date: May 17, 2018Inventor: Chien-Hsun WANG
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Patent number: 9954069Abstract: A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The interlayer dielectric surrounds the barrier layer. As such, the source/drain region can be protected by the barrier layer from oxidation during manufacturing of the semiconductor device, e.g., the formation of the interlayer dielectric.Type: GrantFiled: March 30, 2016Date of Patent: April 24, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tang Peng, Tai-Chun Huang, Teng-Chun Tsai, Cheng-Tung Lin, De-Fang Chen, Li-Ting Wang, Chien-Hsun Wang, Huan-Just Lin, Yung-Cheng Lu, Tze-Liang Lee
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Patent number: 9941394Abstract: The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.Type: GrantFiled: August 14, 2014Date of Patent: April 10, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Teng-Chun Tsai, Cheng-Tung Lin, Li-Ting Wang, Chih-Tang Peng, De-Fang Chen, Hung-Ta Lin, Chien-Hsun Wang