Abstract: A memory management method, a memory control circuit unit using the method, and a memory storage apparatus using the method are provided. The memory management method includes determining whether a use count of the rewritable non-volatile memory module is greater than a use count threshold; based on a result of the determination, sorting each physical erasing unit in a spare area in an ascending manner according to an erasing count of each physical erasing unit in the spare area or according to the number of maximum bit errors of the physical erasing units in the spare area, so as to form a plurality of sorted physical erasing units; and selecting the foremost physical erasing unit from the spare area to write data according to the sorted physical erasing units. By applying the memory management method, the lifespan of the rewritable non-volatile memory module may be effectively prolonged.

Abstract: A data transmitting method for a memory storage apparatus is provided. The method includes: initially setting a first threshold and a first accumulated value; and updating the first threshold by using the first threshold plus the first accumulated value at intervals of a first predetermined time. The method also includes when a detected temperature of the memory storage apparatus is greater than or equal to a temperature threshold, determining whether a size of received writing data is greater than or equal to the first threshold; and if no, writing the writing data into a rewritable non-volatile memory module and then updating the first threshold by using the first threshold minus the size of the writing data; and if yes, not writing the writing data into the rewritable non-volatile memory module. Accordingly, the method can effectively prevent overheat of system during operations of the memory storage apparatus.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A method of detecting a rewritable non-volatile memory module is provided. The method includes setting an output voltage of a write protect pin of a memory interface as a first logic level, giving a read status command and receiving a first status message. The method further includes determining whether a corresponding bit data in the first status message conforms to a status corresponding to the first logic level; and if yes, identifying that the rewritable non-volatile memory module has connected to the memory interface.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

Abstract: A controlling method for a memory storage device is provided. The method includes: disposing a rewriteable non-volatile memory module which is operated at a first working voltage in the memory storage device; and detecting whether the first working voltage is lower than a first voltage threshold. The method also includes: detecting whether a circuit component working voltage is lower than a circuit component voltage threshold; when the first working voltage is lower than the first voltage threshold, setting the memory storage device to stop executing commands from a host system and to stop giving commands to the rewriteable non-volatile memory module; and, when the circuit component working voltage is lower than the circuit component voltage threshold, enabling a reset signal to stop receiving and executing commands from the host system. Therefore, the method can effectively improve the stability of the memory storage device.

Abstract: A memory storage apparatus having a rewritable non-volatile memory module, a first circuit, a memory controller and a power management circuit is provided. The first circuit outputs a state signal and keeps the state signal in a first state when the first circuit is enabled, and then the first circuit keeps the state signal in a second state after a predetermined condition is satisfied. When the memory controller receives a first signal, the power management circuit stops supplying an output voltage to the rewritable non-volatile memory module and the memory controller. Additionally, when the memory controller is enabled, the memory controller determines whether the state signal is in the first state. If true, the memory controller performs a first procedure; and if not, the memory controller performs a second procedure.

Abstract: A data protection method adapted to a rewritable non-volatile memory module having a plurality of physical blocks is provided. The data protection method includes following steps. If the rewritable non-volatile memory module is powered on, a power-off period from last time the rewritable non-volatile memory module is powered off till present is obtained. If the power-off period is longer than a time threshold, whether each physical block satisfies an update condition is determined according to a block information of the physical block. An update procedure is executed on the physical blocks that satisfy the update condition. The update procedure is configured to read data from a physical block and rewrite the data into one of the physical blocks. Thereby, data in the physical blocks is protected from being easily lost, and the lifespan of the rewritable non-volatile memory module is prolonged.

Abstract: A system operation method for controlling a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module includes a plurality of physical blocks. The system operation method includes following steps. A first signal is received from a host system through a host interface. Whether a system setting of the host interface is to be modified is determined. If the system setting is to be modified, a system parameter is read from the physical blocks, and the system setting is modified according to the system parameter. A second signal is transmitted to the host system to establish a connection recognition between the rewritable non-volatile memory module and the host system. Thereby, the settings of transmission between the host system and the rewritable non-volatile memory module are made more flexible.

Abstract: A block management method for managing physical blocks of a rewritable non-volatile memory module, and a memory controller and a memory storage device using the same are provided. The method includes maintaining an error information table for recording one or more error correctable physical blocks among the physical blocks and an error bit number corresponding to the one or more error correctable physical blocks. The method further includes selecting a physical block for writing data according to the one or more error correctable physical blocks and the error bit number thereof recorded in the error information table. Accordingly, the data stability of the memory storage device can be improved.

Abstract: A data writing method for writing data from a host system into a plurality of memory dies of a rewritable non-volatile memory storage apparatus is provided. The data writing method includes determining whether the data transmission interface of the host system complies with a first interface standard or a second interface standard. The data writing method also includes using a general mode to write the data into the memory dies when the data transmission interface of the host system complies with the first interface standard and using a power saving mode to write the data into the memory dies when the data transmission interface of the host system complies with the second interface standard. Accordingly, the data writing method can effectively prevent the stability of the rewritable non-volatile memory storage apparatus from reducing due to insufficient power supplied by the data transmission interface.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A rotatable plug includes a casing unit having a first casing part and a second casing part with a pair of receiving spaces, a pair of conductive terminals respectively having conductive sections, and a rotatable unit including a pivot shaft, a pair of conductive prongs connected transversely to the pivot shaft, and a pair of conductive protrusions protruding out from the pivot shaft. The rotatable unit is rotatable relative to the casing unit between non-use and use positions, where the conductive prongs are accommodated in and extend out of the receiving spaces, respectively. Each conductive protrusion has at least two points of contact with the conductive section of a respective conductive terminal.

Abstract: A data writing method for a multi-level cell (MLC) NAND flash memory and a storage system and a controller using the same are provided. The flash memory includes a plurality of blocks. Each of the blocks includes a plurality of page addresses. The page addresses are categorized into a plurality of upper page addresses and a plurality of lower page addresses. The writing speed of the lower page addresses is faster than that of the upper page addresses. The data writing method includes receiving a writing command and data and writing the data into a page address. The page address is skipped when it is an upper page address and a corresponding lower page address stores a valid data written by a previous writing command. Thereby, the accuracy of the data written by the previous writing command is ensured when a programming error occurs to the flash memory.

Abstract: A data protection method adapted to a rewritable non-volatile memory module having a plurality of physical blocks is provided. The data protection method includes following steps. If the rewritable non-volatile memory module is powered on, a power-off period from last time the rewritable non-volatile memory module is powered off till present is obtained. If the power-off period is longer than a time threshold, whether each physical block satisfies an update condition is determined according to a block information of the physical block. An update procedure is executed on the physical blocks that satisfy the update condition. The update procedure is configured to read data from a physical block and rewrite the data into one of the physical blocks. Thereby, data in the physical blocks is protected from being easily lost, and the lifespan of the rewritable non-volatile memory module is prolonged.

Abstract: A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block.

Abstract: A data writing method for writing data from a host system into a plurality of memory dies of a rewritable non-volatile memory storage apparatus is provided. The data writing method includes determining whether the data transmission interface of the host system complies with a first interface standard or a second interface standard. The data writing method also includes using a general mode to write the data into the memory dies when the data transmission interface of the host system complies with the first interface standard and using a power saving mode to write the data into the memory dies when the data transmission interface of the host system complies with the second interface standard. Accordingly, the data writing method can effectively prevent the stability of the rewritable non-volatile memory storage apparatus from reducing due to insufficient power supplied by the data transmission interface.