Abstract: A holographic projection device includes an image display and a plurality of reflective projection panels. The plurality of reflective projection panels intersect one another at an vertex. A method for operating the holographic projection device includes receiving projection coordinates of the vertex on the image display, receiving a vector connecting coordinates of an image center of the image display and the projection coordinates of the vertex, and shifting a plurality of images displayed on the image display according to the vector to project the plurality of images onto the plurality of reflective projection panels to form a holographic image.

Abstract: A method for manufacturing a non-volatile memory structure includes providing a substrate having a memory region and a logic region defined thereon, masking the logic region while forming at least a first gate in the memory region, forming an oxide-nitride-oxide (ONO) structure under the first gate, forming an oxide structure covering the ONO structure on the substrate, masking the memory region while forming a second gate in the logic region, and forming a first spacer on sidewalls of the first gate and a second spacer on sidewalls of the second gate simultaneously.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.

Abstract: In a display panel, a light shielding layer includes first and second openings adjacent to a first edge of a first substrate. First and second color blocks adjacent to each other are disposed on the light shielding layer along a first direction. The first color block is injected into the first opening and overlaps partial of the light shielding layer. The second color block is injected into the second opening and overlaps partial of the light shielding layer. The first color block has a first overlap portion adjacent to the first edge on the light shielding layer, the second color block has a second overlap portion adjacent to the first edge on the light shielding layer, and the area of the first overlap portion and the area of the second overlap portion are different. A display medium layer is sandwiched between the first substrate and a second substrate.

Abstract: A hollow fiber adsorbent compressed dry air system including an intake unit, a first adsorption/regeneration unit, a second adsorption/regeneration unit, a switch unit and an exhaust unit is disclosed. The first adsorption/regeneration unit has a hollow fiber adsorbent housing and a heating device disposed in the surrounding of the adsorbent housing. The second adsorption/regeneration unit has another hollow fiber adsorbent housing and another heating device disposed in the surrounding of the another adsorbent housing. One of the hollow fiber adsorbent housings performs drying procedure to the compressed air in the room temperature, and the other hollow fiber adsorbent housing, when heated by the heating device thereof, performs a desorption regeneration procedure in a high temperature condition. The switch unit alternately switches the drying procedure and the desorption regeneration procedure to the first adsorption/regeneration unit and the second adsorption/regeneration unit.

Abstract: A door assembly disposed at an opening of a casing of an electronic device is provided. An insertion hole provided at a side of the casing close to the opening for an pin to be inserted into the casing through the insertion hole. The door assembly includes a door cap and a rejecting module. The door cap is at least partially connected to the casing and corresponding to the opening. The rejecting module is disposed in the casing and corresponding to the door cap. The rejecting module is configured to push the door cap to expose the opening when the pin is inserted into the casing through the insertion hole. An electronic device is also provided, which includes a casing and the door assembly.

Abstract: An active-matrix substrate of display panel includes a transparent substrate and capacitor structures including first and second metal layers, first and second and third insulating layers, a conductive layer, a transparent conductive layer disposed above the transparent substrate. The second metal layer disposed on the first insulating layer partially overlaps a region of the first metal layer. The second insulating layer is disposed on the second metal layer. The conductive layer disposed on the second insulating layer partially overlaps a region of the second metal layer. The third insulating layer is disposed on the conductive layer. The transparent conductive layer is insulated from the conductive layer, and is electrically connected with the second metal layer. The transparent conductive layer partially overlaps a region of the conductive layer.

Abstract: A casing and an electronic device using the same are provided. The casing includes a housing, a cover and a connection element. The housing has an opening. The cover selectively covers or exposes the opening and includes a release portion. The release portion is for releasing a component located within the housing. The connection element connects thee cover and the housing.

Abstract: A protective cover includes a first housing configured to receive an electronic device therein, a second housing and a connecting assembly coupling the first housing with the second housing. The connecting assembly includes a first connector assembly including a first connecting shell rotatably coupled to the first housing and a first conducting member capable of coupled to the electronic device, and a second connector assembly including a second connecting shell rotatably coupled to the second housing and two second conducting members electrically coupled to the display screen respectively. When the first conducting member is electrically coupled to one second conducting member, the second housing is capable of rotating relative to the first housing about a first direction. When the second housing is capable of rotating relative to the first housing to a predefined position, the first conducting member is thus electrically coupled to the other second conducting member.

Abstract: An electronic apparatus includes a rear casing, a front cover, and an electronic assembly that includes a display module, a host module, a battery module, and an expansion module. The rear casing has a front opening. The front cover is located on the front opening; the front cover and the rear casing together constitute an accommodation space. The display module is installed inside the accommodation space and stacked over the front cover. The host module is installed inside the accommodation space and stacked over the display module. The battery module is installed inside the accommodation space, stacked over the display module, and arranged side by side with the host module. The expansion module is installed inside the accommodation space and stacked over the battery module. The expansion module includes an expansion circuit board stacked over the battery module and a plurality of card connectors mounted on the expansion circuit board.

Abstract: An array substrate, including a substrate, a multi-layer electrode and a switch element, is provided. The multi-layer electrode is disposed on the substrate and comprises an electric conductive layer and a first etch-stop layer. The electric conductive layer covers the first etch-stop layer. The switch element is disposed on the substrate and electrically connected to the multi-layer electrode, and has a second etch-stop layer.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.

Abstract: An anti-glare rearview mirror is provided, including a conductive reflection layer, being electrically conductive and having a reflection face; a polymer dispersed liquid crystal (PDLC) layer, positioned on a side of the reflection face and disposed on the conductive reflection layer, including a plurality of spacers, a radial dimension of the spacer being between 2 ?m and 18 ?m; a first transparent conductive oxide (TCO) layer, disposed on the PDLC layer; a transparent substrate, disposed on the first transparent conductive oxide layer; a side-sealing member, disposed around the PDLC layer to seal the PDLC layer between the conductive reflection layer and the first transparent conductive oxide layer; wherein at least part of the spacers abut against between the conductive reflection layer and the first transparent conductive oxide layer.

Abstract: A hollow fiber adsorbent compressed dry air system including an intake unit, a first adsorption/regeneration unit, a second adsorption/regeneration unit, a switch unit and an exhaust unit is disclosed. The first adsorption/regeneration unit has a hollow fiber adsorbent housing and a heating device disposed in the surrounding of the adsorbent housing. The second adsorption/regeneration unit has another hollow fiber adsorbent housing and another heating device disposed in the surrounding of the another adsorbent housing. One of the hollow fiber adsorbent housings performs drying procedure to the compressed air in the room temperature, and the other hollow fiber adsorbent housing, when heated by the heating device thereof, performs a desorption regeneration procedure in a high temperature condition. The switch unit alternately switches the drying procedure and the desorption regeneration procedure to the first adsorption/regeneration unit and the second adsorption/regeneration unit.

Abstract: A liquid crystal display (LCD) panel comprising a signal line, a first dielectric layer, a liquid crystal layer, a pixel electrode, and a thin film transistor (TFT) is provided. The first dielectric layer with a first permittivity ?1 is formed on the signal line and the TFT. An average permittivity of the liquid crystal layer is a second permittivity ?2 greater than the first permittivity ?1. The pixel electrode neighbors with the signal line. The distance between the signal line and a side of the first dielectric layer is a first distance d1, and the distance between a side of the first dielectric layer and a side of the pixel electrode is a second distance d2, wherein the second permittivity ?2, the first permittivity ?1, the first distance d1 and the second distance d2 are conformed to the following inequality: ( 1 ? ? ? 1 ? ? ? 2 × ? 2 ? 1 + 1 ) × ? ? ? 2 < V ? ? th V ? ? d .

Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.

Abstract: A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.

Abstract: A method for manufacturing a non-volatile memory structure includes providing a substrate having a gate structure, performing a first oxidation process to form a first SiO layer at least covering a bottom corner of the conductive layer, performing a first etching process to remove the first SiO layer and a portion of the dielectric layer to form a cavity, performing a second oxidation process to form a second SiO layer covering sidewalls of the cavity and a third SiO layer covering a surface of the substrate, forming a first SiN layer filling in the cavity and covering the gate structure on the substrate, and removing a portion of the first SiN layer to form a SiN structure including a foot portion filling in the cavity and an erection portion upwardly extended from the foot portion, and the erection portion covering sidewalls of the gate structure.

Abstract: An array substrate, comprising a substrate, a multi-layer electrode and a switch element, is provided. The multi-layer electrode is disposed on the substrate and comprises an electric conductive layer and a first etch-stop layer. The electric conductive layer covers the first etch-stop layer. The switch element is disposed on the substrate and electrically connected to the multi-layer electrode, and has a second etch-stop layer.

Abstract: A planar design to non-planar design conversion method includes following steps. At least a diffusion region pattern including a first side and a second side perpendicular to each other is received. A look-up table is queried to obtain a first positive integer according to the first side of the diffusion region pattern and a second positive integer according to the second side of the diffusion region pattern. Then, a plurality of fin patterns is formed. An amount of the fin patterns is equal to the second positive integer. The fin patterns respectively include a first fin length, and the first fin length is a product of the first positive integer and a predetermined value. The forming is performed by at least a computer-aided design (CAD) tool.