Abstract: A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

Abstract: An abrasive tool includes an assembly of tool precursors. At least one of the tool precursors has a continuous polycrystalline diamond, polycrystalline cubic boron nitride, or ceramic material cutting element formed into a blade shape. The abrasive tool can additionally include a setting material, which is configured to attach the tool precursors and form a single mass. The selection, arrangement, and setting of the tool precursors can result in an abrasive tool having a predetermined cutting configuration. Methods for forming such an abrasive tool are also disclosed.

Abstract: Methods and devices for cooling electronic circuits having at least one heat source are disclosed and described. One such thermally dynamic electronic device may include a layer of diamond material coated on a support substrate, and circuitry disposed on the layer of diamond material, the diamond material being configured to accelerate movement of heat away from the circuitry. Although the diamond material may be any known diamond material that functions to accelerate heat transfer, in one aspect the diamond material may be diamond-like carbon. In one specific aspect, the diamond-like carbon may be amorphous carbon. In another aspect, the diamond material may be crystalline diamond.

Abstract: An annealing method to reduce defects of epitaxial films and epitaxial films formed therewith. The annealing method includes features as follows: apply a pressure ranged from 10 MPa to 6,000 MPa to an epitaxial film grown on a substrate through a vapor phase deposition process and heat the epitaxial film at a temperature lower than the melting temperature of the epitaxial film. Through applying pressure to the epitaxial film, the lattice strain of the epitaxial film is alleviated, and therefore the defect density of the epitaxial film also decreases.

Abstract: CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a CMP pad dresser can include a matrix layer and a monolayer of a plurality of superabrasive particles embedded in the matrix layer, where each superabrasive particle in the monolayer protrudes from the matrix layer. The difference in the protrusion distance between the highest protruding tip and the next highest protruding tip of the monolayer of superabrasive particles is less than or equal to about 20 microns, and the difference in protrusion distance between the highest 1% of the protruding tips of the monolayer of superabrasive particles are within about 80 microns or less.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

Abstract: CMP pad dressers with superabrasive particles oriented into an attitude that controls CMP pad performance, and methods associated therewith are disclosed and described. The controlled CMP pad performance may be selected to optimize CMP pad dressing rate and dresser wear.

Abstract: Methods for extending the service life of a CMP pad dresser having a substrate and a plurality of superabrasive particles disposed thereon which is used to dress a CMP pad are disclosed and described. The method may include dressing the chemical mechanical polishing pad with the dresser; determining superabrasive particle wear by measuring a mechanical property of the pad, dresser, or combination thereof; and responding to the mechanical property measurement by varying pressure and RPM between the pad and the dresser in relation to the superabrasive particle wear in order to extend dresser life.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: Transparent electrodes, devices incorporating such electrodes, and associated methods are provided. In one aspect, for example, a method for fabricating a transparent electrode can include providing a carbon-insoluble support substrate, forming a carbon-soluble layer on the support substrate, and applying a carbon source to the carbon-soluble layer to form a plurality of graphene layers on the carbon-soluble layer. In another aspect, the method can further include providing a transparent substrate having an adhesive surface, applying the adhesive surface to the plurality of graphene layers such that the transparent substrate is adhered thereto, and removing the carbon-soluble layer and the support substrate from the plurality of graphene layers.

Abstract: A plant-growing device with light emitting diode comprises a darkroom, a generator, a gas collecting device and a water supplying device. The darkroom comprises an accommodating space and a plurality of light emitting diodes disposed in the accommodating space for producing a light beam irradiating the accommodating space. The generator is disposed outside the darkroom. The generator is configured to receive sunlight from the atmospheric environment and convert it into an electric energy and provide the electric energy for the light emitting diodes. The gas collecting device connected between the accommodating space and the atmospheric environment is configured to transfer carbon dioxide from the atmospheric environment into the accommodating space and discharge oxygen from the accommodating space into the atmospheric environment. The water supplying device connected to the darkroom is configured to transport water outside the darkroom into the accommodating space.

Abstract: Superabrasive tools and methods for making and using the same are provided. In one aspect, for example, a CMP pad dresser includes a first monolayer of superabrasive particles disposed on and coupled to one side of a metal support layer and a second monolayer of superabrasive particles disposed on and coupled to the metal support layer on an opposite side from the first monolayer. The superabrasive particles of the second monolayer are positioned to have substantially the same distribution as the superabrasive particles of the first monolayer.

Abstract: Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.

Abstract: LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: A method of growing a diamond mass in a liquid growth medium. The liquid growth medium can include a carbon source, a diamond growth catalyst such as a diamond catalyst metal-rare earth element alloy or nanocatalyst, and a dissociated hydrogen of a hydrogen source. The carbon source provides carbon atoms for growing diamond and can include a diamond seed material for diamond growth. The molten liquid phase provides a diamond growth catalyst which allows the carbon to form diamond at the temperature and low pressure conditions discussed. Furthermore, the dissociated hydrogen acts as a concentrator for assembling carbon atoms at a relatively high concentration which mimicks, in some respects, diamond growth under more conventional high pressure processes without the high pressure.