Abstract: A six-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical lenses along the optical axis include a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; a fifth lens with refractive power, and a sixth lens with negative refractive power. At least one lens among the first lens to the fifth lens has positive refractive power. The image-side surface and object-side surface of the sixth lens are aspheric, and at least one of the image-side surface and the object-side surface of the sixth lens has an inflection point. The optical lens of the optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A four-piece optical image capturing system. In order from an object side to an image side, the optical image capturing system along the optical axis includes a first lens with positive refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with refractive power; and at least one of the image-side surface and object-side surface of each of the four lenses are aspheric. The optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: An optical image capturing system includes, along the optical axis in order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. At least one lens among the first to the sixth lenses has positive refractive force. The seventh lens has negative refractive force. Both an object-side surface and an image-side surface of the seventh lens are aspheric surfaces. At least one surface of the seventh lens has at least an inflection point thereon. The lenses in the optical image capturing system which have refractive power include the first to the seventh lenses. The optical image capturing system can increase aperture value and improve the imaging quality for use in compact cameras.

Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.

Abstract: A surface-treated copper foil includes a treated surface, where the peak extreme height (Sxp) of the treating surface is 0.4 to 3.0 ?m. When the surface-treated copper foil is heated at a temperature of 200° C. for 1 hour, the ratio of the integrated intensity of diffraction peak of (111) plane to the sum of the integrated intensities of diffraction peaks of (111) plane, (200) plane, and (220) plane of the treating surface is at least 60%.

Abstract: Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.

Abstract: A six-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; a fifth lens with refractive power, and a sixth lens with negative refractive power. The image-side surface and object-side surface of the sixth lens are aspheric, and at least one surface of the sixth lens has an inflection point. At least one among the first lens to the fifth lens has positive refractive power. The optical lens of the optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A vehicle auxiliary system includes at least three optical image capturing systems respectively disposed on a left portion, a right portion, and a rear portion of a movable carrier, at least one image fusion output device, and at least one displaying device. Each optical image capturing system includes an image capturing module and an operation module. The operation module is electrically connected to the image capturing module. The image fusion output device disposed inside the movable carrier is electrically connected to the optical image capturing systems. The displaying device is electrically connected to the image fusion output device. Each optical image capturing system has at least one lens group. The lens group includes at least two lenses having refractive power and satisfies: 1.0?f/HEP?10.0; 0 deg<HAF?150 deg; and 0.9?2(ARE/HEP)?2.0.

Abstract: A four-piece optical image capturing system. In order from an object side to an image side, the optical image capturing system along the optical axis includes a first lens with positive refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with refractive power; and at least one of the image-side surface and object-side surface of each of the four lenses are aspheric. The optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A semiconductor structure for wafer level bonding includes an interconnecting layer on a substrate, a bonding dielectric layer on the interconnecting layer, and a bonding pad in the bonding dielectric layer. The bonding pad includes a top surface exposed from the bonding dielectric layer, a bottom surface opposite to the top surface and physically contacting a dielectric portion of the interconnecting layer, and a sidewall between the top surface and the bottom surface. A bottom angle between the sidewall and the bottom surface is smaller than 90 degrees, and the bonding pad is not electrically connected to the interconnecting layer.

Abstract: A battery cell including a membrane electrode assembly, a cathode bipolar plate and an anode bipolar plate. The anode bipolar plate includes a metal layer and a thermally conductive layer. The metal layer is stacked on a side of the membrane electrode assembly that is located farthest away from the cathode bipolar plate. The metal layer has a bottom surface, a top surface, a first side surface and a second side surface. The bottom surface faces the membrane electrode assembly. The thermally conductive layer includes a first cover layer and two second cover layers. The first cover layer covers the top surface of the metal layer. The two second cover layers protrude from two opposite sides of the first cover layer, respectively. The two second cover layers at least partially cover the first side surface and the second side surface of the metal layer, respectively.

Abstract: A close-end fuel cell and an anode bipolar plate thereof are provided. The anode bipolar plate includes an airtight conductive frame and a conductive porous substrate disposed within the airtight conductive frame. In the airtight conductive frame, an edge of a first side has a fuel inlet, and an edge of a second side has a fuel outlet. The conductive porous substrate has at least one flow channel, where a first end of the flow channel communicates with the fuel inlet, a second end of the flow channel communicates with the fuel outlet. The flow channel is provided with a blocking part near the fuel inlet to divide the flow channel into two areas.

Abstract: A semiconductor structure including a first substrate, a first conductive layer, and first bonding pads is provided. The first conductive layer is located on the first substrate. The first conductive layer includes a main body portion and an extension portion. The extension portion is connected to the main body portion and includes a terminal portion away from the main body portion. The first bonding pads are connected to the main body portion and the extension portion. The number of the first bonding pads connected to the terminal portion of the extension portion is plural.

Abstract: A semiconductor structure for wafer level bonding includes a bonding dielectric layer disposed on a substrate and a bonding pad disposed in the bonding dielectric layer. The bonding pad includes a top surface exposed from the bonding dielectric layer, a bottom surface opposite to the top surface, and a sidewall between the top surface and the bottom surface. A bottom angle between the bottom surface and sidewall of the bonding pad is smaller than 90 degrees.

Abstract: A semiconductor structure in which the upper and lower semiconductor wafers are bonded by a hybrid bonding method is provided. The two semiconductor wafers each have discontinuous multiple metal traces or spiral coil-shaped metal traces. By hybrid bonding the two semiconductor wafers, multiple discontinuous metal traces are bonded together to form an inductance element with a continuous and non-intersecting path, or the two spiral coil-shaped metal traces are bonded together to form an inductance element. In this semiconductor structure, the inductance element formed by hybrid bonding has the advantage that the inductance value is easily adjusted.

Abstract: An air-cooling fuel cell stack includes fuel cells, wherein each of the fuel cells includes an anode bipolar plate, a cathode bipolar plate, a membrane electrode assembly (MEA) between the anode and cathode bipolar plates, and an anode sealing member. The MEA includes an anode side structure, a cathode side structure, and an ion conductive membrane (ICM), and the ICM is sandwiched between the anode side structure and the cathode side structure. The anode sealing member is disposed at a periphery of the anode side structure and sandwiched by the anode bipolar plate and the ICM. The anode sealing member includes a first sealing material and a second sealing material, a Shore hardness of the first sealing material is different from that of the second sealing material, and an arrangement direction of the first and second sealing materials is perpendicular to a compression direction of the plurality of fuel cells.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A surface-treated copper foil includes a treated surface, where the peak extreme height (Sxp) of the treating surface is 0.4 to 3.0 ?m. When the surface-treated copper foil is heated at a temperature of 200° C. for 1 hour, the ratio of the integrated intensity of diffraction peak of (111) plane to the sum of the integrated intensities of diffraction peaks of (111) plane, (200) plane, and (220) plane of the treating surface is at least 60%.