Abstract: A six-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical lenses along the optical axis include a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; a fifth lens with refractive power, and a sixth lens with negative refractive power. At least one lens among the first lens to the fifth lens has positive refractive power. The image-side surface and object-side surface of the sixth lens are aspheric, and at least one of the image-side surface and the object-side surface of the sixth lens has an inflection point. The optical lens of the optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: An optical image capturing system includes, along the optical axis in order from an object side to an image side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. At least one lens among the first to the sixth lenses has positive refractive force. The seventh lens can have negative refractive force, wherein both the surfaces of the seventh lens are aspheric surfaces, and at least one surface of the seventh lens has an inflection point. The lenses in the optical image capturing system which have refractive power include the first to the seventh lenses. The optical image capturing system can increase aperture value and improve the imaging quality for use in compact cameras.

Abstract: A six-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; a fifth lens with refractive power, and a sixth lens with negative refractive power. The image-side surface and object-side surface of the sixth lens are aspheric, and at least one surface of the sixth lens has an inflection point. At least one among the first lens to the fifth lens has positive refractive power. The optical lens of the optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A four-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical image capturing system along the optical axis includes a first lens with positive refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with refractive power; and at least one of the image-side surface and object-side surface of each of the four lenses are aspheric. The optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. A top portion of the semiconductor fin is formed of a first semiconductor material. A semiconductor cap layer is formed on a top surface and sidewalls of the semiconductor fin. The semiconductor cap layer is formed of a second semiconductor material different from the first semiconductor material. The method further includes forming a gate stack on the semiconductor cap layer, forming a gate spacer on a sidewall of the gate stack, etching a portion of the semiconductor fin on a side of the gate stack to form a first recess extending into the semiconductor fin, recessing the semiconductor cap layer to form a second recess directly underlying a portion of the gate spacer, and performing an epitaxy to grow an epitaxy region extending into both the first recess and the second recess.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: An air-cooling fuel cell stack includes fuel cells, wherein each of the fuel cells includes an anode bipolar plate, a cathode bipolar plate, a membrane electrode assembly (MEA) between the anode and cathode bipolar plates, and an anode sealing member. The MEA includes an anode side structure, a cathode side structure, and an ion conductive membrane (ICM), and the ICM is sandwiched between the anode side structure and the cathode side structure. The anode sealing member is disposed at a periphery of the anode side structure and sandwiched by the anode bipolar plate and the ICM. The anode sealing member includes a first sealing material and a second sealing material, a Shore hardness of the first sealing material is different from that of the second sealing material, and an arrangement direction of the first and second sealing materials is perpendicular to a compression direction of the plurality of fuel cells.

Abstract: A semiconductor structure in which the upper and lower semiconductor wafers are bonded by a hybrid bonding method is provided. The two semiconductor wafers each have discontinuous multiple metal traces or spiral coil-shaped metal traces. By hybrid bonding the two semiconductor wafers, multiple discontinuous metal traces are bonded together to form an inductance element with a continuous and non-intersecting path, or the two spiral coil-shaped metal traces are bonded together to form an inductance element. In this semiconductor structure, the inductance element formed by hybrid bonding has the advantage that the inductance value is easily adjusted.

Abstract: A semiconductor structure includes a first layer, a second layer, a first interconnection layer, and a second interconnection layer. The first layer includes an upper electrode pattern, and the second layer includes a lower electrode pattern, wherein the upper electrode pattern is opposite to the lower electrode pattern. The first interconnection layer includes a plurality of first interconnect structures electrically connected on the upper electrode pattern. The second interconnection layer includes a plurality of second interconnect structures electrically connected on the lower electrode pattern. The first interconnect structures on the upper electrode pattern are hybrid bonded with the second interconnect structures on the lower electrode pattern. Therefore, the upper electrode patterns and the lower electrode patterns are joined by hybrid bonding to form a capacitor element.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A semiconductor structure includes a first layer, a second layer, a first interconnection layer, and a second interconnection layer. The first layer includes an upper electrode pattern, and the second layer includes a lower electrode pattern, wherein the upper electrode pattern is opposite to the lower electrode pattern. The first interconnection layer includes a plurality of first interconnect structures electrically connected on the upper electrode pattern. The second interconnection layer includes a plurality of second interconnect structures electrically connected on the lower electrode pattern. The first interconnect structures on the upper electrode pattern are hybrid bonded with the second interconnect structures on the lower electrode pattern. Therefore, the upper electrode patterns and the lower electrode patterns are joined by hybrid bonding to form a capacitor element.

Abstract: A structure of semiconductor device is provided. The structure includes a first bonding pattern, formed on a first substrate. A first grating pattern is disposed on the first substrate, having a plurality of first bars extending along a first direction. A second bonding pattern is formed on a second substrate. A second grating pattern, disposed on the second substrate, having a plurality of second bars extending along the first direction. The first bonding pattern is bonded to the second bonding pattern. One of the first grating pattern and the second grating pattern is stacked over and overlapping at the first direction with another one of the first grating pattern and the second grating pattern. A first gap between adjacent two of the first bars is different from a second gap between adjacent two of the second bars.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: Surface-treated copper foils exhibiting a void volume (Vv) in a range of 0.4 to 2.2 ?m3/?m2 and an arithmetic mean waviness (Wa) lower than or equal to 0.4 ?m are reported. Where the surface-treated copper foil is treated on the drum side and includes a treatment layer comprising a nodule layer. Such surface-treated copper foils can be used as a conductive material having low transmission loss, for example in circuit boards.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: Electrodeposited copper foils possessing properties for manufacturing lithium ion rechargeable secondary batteries are described, including methods of making the electrodeposited copper foils, methods for making the battery, and the resultant battery. The electrodeposited copper foils have a specific burst strength in the range of 1.5 to 4.3 kPa*m2/g and a tensile strength in the range of 30 to 40 kgf/mm2. The deposited side of the electrodeposited copper foil has a surface hardness in the range of 0.2 to about 2.0 Gpa by nano indentation analysis to resist wrinkling during pressing of the active materials on the electrodeposited copper foil. The foil exhibits reduced copper burr formation and burr size after clipping.

Abstract: Electrodeposited copper foils possessing properties for manufacturing lithium ion rechargeable secondary batteries are described, including methods of making the electrodeposited copper foils, methods for making the battery, and the resultant battery. The electrodeposited copper foils have a specific burst strength in the range of 1.5 to 4.3 kPa*m2/g and a tensile strength in the range of 30 to 40 kgf/mm2. The deposited side of the electrodeposited copper foil has a surface hardness in the range of 0.2 to about 2.0 Gpa by nano indentation analysis to resist wrinkling during pressing of the active materials on the electrodeposited copper foil. The foil exhibits reduced copper burr formation and burr size after clipping.

Abstract: Surface-treated copper foils that exhibit a material volume (Vm) less than 1.90 ?m3/?m2. Where the surface-treated copper foil is treated on the drum side and includes a treatment layer comprising a nodule layer. Such surface-treated copper foils can be used as a conductive material having low transmission loss, for example in circuit boards.