Abstract: A care system monitoring method for sensing the movement state of a bedridden person is provided. The care system monitoring method includes the following stages. Initial-state information is sensed. A first warning signal is issued to remind the caregiver to perform a movement action on the bedridden person when the time that the bedridden person has been in the initial state exceeds the threshold period. First-state information (which is information that is collected when the bedridden person is in the first state) is sensed after completing the movement action. It is determined whether the bedridden person was moved correctly according to the initial-state information and the first-state information. The first-state information is reset as the initial-state information if it is determined that the bedridden person has been moved correctly. A second warning signal is issued if it is determined that the bedridden person has been moved incorrectly.

Abstract: A homogeneous composite substrate includes a woven cloth and at least one fiber membrane. The woven cloth includes a plurality of first fibers. The fiber membrane is disposed on at least one surface of the woven cloth, and the fiber membrane includes a plurality of second fibers, in which a material of the first fibers and a material of the second fibers are the same, a fiber diameter of each first fiber is larger than or equal to 20 ?m and smaller than or equal to 130 ?m, and a fiber diameter of each second fiber is larger than or equal to 3 ?m and smaller than or equal to 10 ?m.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference clock signals. Each of access signal transmission circuits each includes a duty cycle adjusting circuit, a duty cycle detection circuit, a frequency division circuit and an asynchronous first-in-first-out circuit. The duty cycle adjusting circuit performs duty cycle adjustment on one of the reference clock signals according to a duty cycle detection signal to generate an output clock signal having a duty cycle. The duty cycle detection circuit detects a variation of the duty cycle to generate the duty cycle detection signal. The frequency division circuit divides a frequency of the output clock signal to generate a read clock signal. The asynchronous first-in-first-out circuit receives an access signal from a memory access controller and outputs an output access signal according to the read clock signal to access the memory device accordingly.

Abstract: The present disclosure discloses a memory access interface device. A clock generation circuit generates reference signals. A transmitter transmits an output command and address signal to a memory device according to the reference signals. A signal training circuit executes a training process in a training mode that includes steps outlined below. A training signal is generated such that the training signal is transmitted as the output command and address signal. The training signal and the data signal generated by the memory device are compared to generate a comparison result indicating whether the data signal matches the training signal. The comparison result is stored. The clock generation circuit is controlled to modify a phase of at least one of the reference signals to be one of a plurality of under-test phases to execute a new loop of the training process until all the under-test phases are trained.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: The present disclosure provides a method for preparing a hydrogel composition with thermos-sensitive and ionic reversible properties and the hydrogel composition prepared by the method. Related application products of the hydrogel composition of the present disclosure include wound dressings, drug carriers, three-dimensional cellular scaffolds, soluble microspheres, and cell capture and release systems, wherein the hydrogel composition with thermos-sensitive and ionic reversible properties has good in vitro and in vivo stability and high biocompatibility, and is non-toxic. The hydrogel composition can be removed and replaced by washing with metal chelating aqueous solution at low temperature.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: An electrical connector assembly includes: a male connector, provided with a conductive shell; a first substrate, accommodated in the conductive shell and used to transmit receiving signals; a second substrate, accommodated in the conductive shell and used to transmit sending signals; a shielding sheet, located between the first substrate and the second substrate; a female connector, provided with a first conductive body and a second conductive body; a plurality of first signal terminals, accommodated in the first conductive body and used to transmit receiving signals; and a plurality of second signal terminals, accommodated in the second conductive body and used to transmit sending signals. The first signal terminals and the first substrate are electrically contacted to each other. The second signal terminals and the second substrate are electrically contacted to each other. The first conductive body and/or the second conductive body are used to lap joint with the shielding sheet.

Abstract: During operation, a computer system may provide instructions to access points in an indoor environment to measure relative distances between the access points. Then, the computer system may receive the measured relative distances. Moreover, the computer system may calculate geographic locations of the access points based at least in part on the measured relative distances. Next, the computer system may select potential anchor access points in the access points, and may provide, to an electronic device, information specifying the potential anchor access points. Furthermore, the computer system may receive, from the electronic device, second information specifying anchor access points in the potential access points and defined locations of the anchor access points. Additionally, the computer system may update the geographic locations based at least in part on the defined of the anchor access points, and may provide, to the access points, the updated geographic locations.

Abstract: A replacement device includes a replacement module and a slider. The replacement module includes a sliding portion. The sliding portion is provided with a limiting column, which is formed with a fixing hole. The slider includes a slider body. The slider body is provided with a first latch, a limiting hole and a fixing element, wherein the first latch is arranged on a first side edge of the slider body. The slider is correspondingly arranged on the sliding portion of the replacement module, and the limiting column of the sliding portion passes through the limiting hole. The fixing element has a top portion, and is fixed in the fixing hole. The size of the top portion is greater than the size of the limiting hole, so that the slider moves relative to the replacement module within a limit range of the limiting hole.

Abstract: Disclosed are semiconductor devices having an interconnection pattern that includes a plurality of parallel conductors including a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis and offset from the first axis by an axis offset distance LAO in which the first dummy pattern includes N dummy conductors having a first dummy conductor length LDC with the dummy conductors being separated by a dummy conductor-to-dummy conductor spacing EED.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A power converter includes a high side switch, a low side switch, a low side driver, a loading detector, a configurable regulator and a high side driver. The low side driver generates a low side drive signal to control the low side switch. The configurable regulator generates a regulation voltage, a magnitude of which is greater when the loading detector detects that the power converter has light loading than when the loading detector detects that the power converter has heavy loading. The high side driver generates a high side drive signal that switches between the input voltage and the regulation voltage to control the high side switch.

Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.

Abstract: A monitor includes a casing assembly, a light-emitting module and a display panel. The casing assembly includes a casing and a support frame. The support frame is disposed in the casing. The support frame includes an accommodation portion and at least one support portion, the accommodation portion is connected to the casing, the support portion is connected to the accommodation portion and protrudes from the accommodation portion. The light-emitting module is disposed in the accommodation portion. The display panel is supported by the at least one support portion.

Abstract: A bracket device of a slide rail assembly includes a longitudinal wall and a mounting member. The mounting member is movable relative to the longitudinal wall along a height direction of the longitudinal wall. When the bracket device is rotated to be switched from a first state to a second state, the mounting member is configured to be moved from a first position to a second position. When the mounting member is located at the first position, the mounting member is operable to be mounted to a rack. When the mounting member is located at the second position, the mounting member is prevented from being mounted to the rack.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a source region, a drain region, a gate region and a gate oxide. The gate region is disposed between the source region and the drain region. The gate oxide is disposed on the gate region. A bottom interface is between the gate region and the gate oxide, and an entire of the bottom interface is substantially flat.