Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a doped region within the substrate; a pair of source/drain regions extending along a first direction on opposite sides of the doped region; a gate electrode disposed in the doped region, wherein the gate electrode has a plurality of first segments extending in parallel along the first direction; and a protection structure over the substrate and at least partially overlaps the gate electrode.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.

Abstract: A semiconductor structure and forming method thereof are provided. A substrate includes a region. A first gate structure and a sacrificial gate structure are recessed in the substrate and disposed in the region. The sacrificial gate structure is adjacent to the first gate structure. A first contact is electrically connected to the first gate structure. A sacrificial gate masking structure is disposed over the sacrificial gate structure. An upper surface of the sacrificial gate structure is entirely covered by the sacrificial gate masking structure.

Abstract: A failure diagnostic system of a motor encoder is disclosed and includes a motor, an encoder, a servo driver, and a safety module. The servo driver controls the motor through a current command. The safety module continuously obtains a feedback position of the motor through the encoder. When the safety module determines based on the feedback position that the current state of the motor is consistent with a pre-determined disturbance condition, the safety module requests the servo driver to output an additional current command to disturb the motor. Next, the safety module determines whether the encoder is failure based on a variation of following feedback position.

Abstract: A delivery chain apparatus of wood-working machine with saw blades is disclosed. The delivery chain apparatus is formed into a loop by pivoting track units. The surface of each track unit is provided at least with a chain, each chain is locked on the track unit, some chains are made of metal, and the surface of a metallic chain is provided with teeth. The delivery device revolves on a desktop by power to send wood boards below the saw blades. The present invention is characterized in that the chains on the track units of the delivery device are combination of non-skid chains and the metallic chains, with the non-skid chains being made of rubber.

Abstract: A semiconductor structure includes a first device, a second device, and a plurality of pillars. The first device includes a first dielectric layer, a first high-k dielectric layer over the first dielectric layer, and a first metal gate structure. The second device includes a second dielectric layer, a second high-k dielectric layer over the second dielectric layer, and a second metal gate structure. The first dielectric layer has a first thickness, the second dielectric layer has a second thickness, and the second thickness is less than the first thickness. The pillars are disposed in the first metal gate structure. The pillars are separated from each other by the first metal gate structure.

Abstract: A backlight includes a first casing having an opening; a second casing connected to the first casing; an optical member disposed between the first casing and the second casing, and exposed via the opening; a supporting back plate disposed between the optical member and the second casing; at least one circuit board disposed between the supporting back plate and the second casing; and a plurality of light bars disposed on the supporting back plate. The supporting back plate is disposed between the second casing and optical member. The supporting back plate includes a first area and a second area, configured such that a distance from the first area to the second casing is greater than a distance from the second area to the second casing.

Abstract: A heat dissipation module includes a diversion case and a fan. The diversion case includes an input section, an output section, and a connecting section that connects the input section and the output section, where an angle is defined between an extending direction of the input section and an extending direction of the output section, and an end of the input section away from the connecting section and an end of the output section away from the connecting section are respectively inclined relative to the connecting section. The fan is accommodated in the connecting section. An electronic device assembly includes an expansion component and the heat dissipation module.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer and contacting the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.

Abstract: A casing with a replacement structure includes the casing and a replacement assembly. The casing includes a casing body and an assembly space. The assembly space is provided in a recessed manner at the casing body and is located at a vertical intersection of two side edges of the casing body. The replacement assembly includes a frame, which is installed in the assembly space and encloses with the casing body to form an accommodating space.

Abstract: Some embodiments relate to an integrated chip structure. The integrated chip structure includes a substrate having a first device region and a second device region. A plurality of first transistor devices are disposed in the first device region and respectively include epitaxial source/drain regions disposed on opposing sides of a first gate structure. The epitaxial source/drain regions have an epitaxial material. A plurality of second transistor devices are disposed in the second device region and respectively include implanted source/drain regions disposed on opposing sides of a second gate structure. A dummy region includes one or more dummy structures. The one or more dummy structures have dummy epitaxial regions including the epitaxial material.

Abstract: An electronic device assembly includes an expansion component and a host. The expansion component includes a first case, a first circuit board, and a first connector. The host includes a second case, a main circuit board, and a main connector. The first circuit board is arranged in the first case. The first connector is electrically connected to the first circuit board and is exposed from a top plate of the first case. The main circuit board is arranged in the second case. The main connector is electrically connected to the main circuit board and exposed from a second surface of the second case. When the host is assembled to the expansion component, the second surface of the second case covers the top plate of the first case, and the first connector is electrically connected to the main connector.

Abstract: An electronic device includes an input unit and a transmission dock. The transmission dock is pivotally connected to the input unit, and includes at least one pivotal concave portion, a first wall, a second wall and a third wall. The at least one pivotal concave portion has a first sidewall and a second sidewall opposite to each other. The first wall is connected to the first sidewall and the second sidewall. The second wall is connected to the first sidewall and the second sidewall. The third wall is connected to the first sidewall and the second sidewall. The first wall and the second wall are connected to two opposite sides of the third wall, respectively. An inner surface of the third wall forms a sloped surface toward each of the first sidewall and the second sidewall, and each of the sloped surfaces has an opening at an end thereof.

Abstract: A replacement device includes a replacement module and a slider. The replacement module includes a sliding portion. The sliding portion is provided with a limiting column, which is formed with a fixing hole. The slider includes a slider body. The slider body is provided with a first latch, a limiting hole and a fixing element, wherein the first latch is arranged on a first side edge of the slider body. The slider is correspondingly arranged on the sliding portion of the replacement module, and the limiting column of the sliding portion passes through the limiting hole. The fixing element has a top portion, and is fixed in the fixing hole. The size of the top portion is greater than the size of the limiting hole, so that the slider moves relative to the replacement module within a limit range of the limiting hole.

Abstract: An electronic device includes: a body, including opposite outer and inner surfaces, and a through opening passing through the outer and inner surfaces; a fan, disposed on the outer surface and having an air outlet; a heat sink assembly, disposed at the air outlet and corresponding to the through opening; a first thermal tube, having one end assembled on the heat sink assembly and located on the side of the outer surface; a first heat source, disposed corresponding to the other end of the first thermal tube; a thermal plate, disposed in the body and corresponding to the through opening, having one side abutting against the heat sink assembly and the inner surface; a second thermal tube, having one end connected to the other side of the thermal plate; and a second heat source, disposed corresponding to the other end of the second thermal tube.

Abstract: A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A poly(amide-imide) is provided. The poly(amide-imide) is represented by formula (1), wherein R is a C6 aryl group, a C7-C8 aralkyl group, a C2-C6 alkoxyalkyl group, or a C3-C18 alkyl group; and 0.02?X?0.5.

Abstract: Disclosed is a DDR SDRAM signal calibration device capable of adapting to the variation of voltage and/or temperature. The device includes: an enablement signal setting circuit configured to generate data strobe (DQS) enablement setting; a signal gating circuit configured to generate a DQS enablement setting signal and a DQS enablement signal according to the DQS enablement setting and then output a gated DQS signal according to the DQS enablement signal and a DQS signal; and a calibration circuit configured to generate a first delay signal according to the DQS enablement setting signal and generate a second delay signal according to the first delay signal, the calibration circuit further configured to generate a calibration signal according to the first and second delay signals and the DQS signal. The enablement signal setting circuit maintains or adjusts the DQS enablement setting according to the calibration signal.