Chih-Ming Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A method includes forming a first mandrel pattern and a second mandrel pattern. The first mandrel pattern includes at least first and second mandrels for a mandrel-spacer double patterning process. The second mandrel pattern includes at least a third mandrel inserted between the first and second mandrels. The first mandrel pattern and the second mandrel pattern include a same material. The first and second mandrels are merged together with the third mandrel to form a single pattern.
Abstract: A microsphere includes a cross-linked hydrophilic substrate, a lipophilic substrate, and a surfactant. The cross-linked hydrophilic substrate includes cross-linked sodium alginate and gelatin. The lipophilic substrate includes iodized oil, C16-C18 alkyl alcohol, and polycaprolactone. The surfactant includes polyoxyethylene stearate. The microsphere is dry or substantially solid. Prior to being used for embolization, the microsphere can be immersed in a drug containing mixture to allow the microsphere to absorb the mixture and expand, thereby loaded with the drug. A method for preparing the microsphere and a method for embolizing tumor in a subject by using the microsphere are also provided.
May 31, 2018
July 29, 2021
T-ACE Medical Co., Ltd., T-ACE Medical Co., Ltd.
CHIH HONG CHEN, CHAU NAN HONG, CYUN JHE YAN, CHUEH KUAN WANG, CHEN HSI CHOU, YI SHENG LIU, HONG MING TSAI, CHI MING HO, CHUAN SHENG LIN, XI ZHANG LIN
Abstract: A shaft assembly that pivotally couples a first module body to a second module body includes two double shaft hinges and a main cover plate. One end of each double shaft hinge pivotally couples to the first module body, and another end pivotally couples to the second module body. The first module body is pivotable about a first axis with respect to the second module body via the double shaft hinges, and the second module body is pivotable about a second axis with respect to the first module body via the double shaft hinges. The first axis parallels the second axis, and the first axis is closer to the first module body than the second axis to the first module body. The main cover plate is located between the two double shaft hinges, and two ends of the main cover plate are respectively connected to the two double shaft hinges.
Abstract: A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.
Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.
Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The semiconductor device structure also includes a first dielectric layer surrounding the first conductive structure and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a second conductive structure partially surrounded by the second dielectric layer and partially surrounded by the first conductive structure. In addition, the semiconductor device structure includes an interfacial layer separating the first conductive structure from the second conductive structure.
Abstract: A system that generates a layout diagram has a processor that implements a method, the method including: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.
April 8, 2021
July 22, 2021
Kam-Tou SIO, Chih-Liang CHEN, Hui-Ting YANG, Shun Li CHEN, Ko-Bin KAO, Chih-Ming LAI, Ru-Gun LIU, Charles Chew-Yuen YOUNG
Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.
April 26, 2019
Date of Patent:
July 20, 2021
Taiwan Semiconductor Manufacturing Company Ltd.
Abstract: A topical formulation comprising (a) a therapeutically effective amount of tofacitinib; (b) at least one solvent; and (c) optionally one or more other pharmaceutically acceptable excipients is provided. Also provided is a method for treating and/or preventing autoimmune diseases in a subject administering said topical formulation.
Abstract: A system and method of content adaptive pixel intensity processing are described. The method includes receiving a predefined set of processed video data configured from the processed video data, deriving a range information associated with an original maximum value and an original minimum value for a predefined set of original video data, wherein the predefined set of processed video data is derived from the predefined set of original video data, and adaptively clipping pixel intensity of the predefined set of processed video data to a range deriving from the range information, wherein the range information is incorporated in a bitstream and represented in a form of the original maximum value and the original minimum value, prediction values associated with a reference maximum value and a reference minimum value, or a range index associated with a predefined range set.
Abstract: A high-electron mobility transistor includes a substrate; a buffer layer over the substrate; a GaN channel layer over the buffer layer; a AlGaN layer over the GaN channel layer; a gate recess in the AlGaN layer; a source region and a drain region on opposite sides of the gate recess; a GaN source layer and a GaN drain layer grown on the AlGaN layer within the source region and the drain region, respectively; and a p-GaN gate layer in and on the gate recess.
Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first conductive interconnect wire extending in a first direction over a substrate. A second conductive interconnect wire is arranged over the first conductive interconnect wire. A via rail is configured to electrically couple the first conductive interconnect wire and the second conductive interconnect wire. The first conductive interconnect wire and the second conductive interconnect wire extend as continuous structures past one or more sides of the via rail.
Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.
Abstract: A key preloading structure including a base, a set of switches and a set of keys is provided. The set of switches is arranged on the base. The set of keys has a rotating shaft and two extended elastomers. The rotating shaft is assembled on the base. One end of each extended elastomer is fixedly connected to the rotating shaft, and another end is disposed on the set of switches. Each of the two extended elastomers preloads the set of switches with a gravity less than a triggering force for starting the set of switches.
Abstract: An antenna system includes a first antenna, a second antenna, a third antenna, an isolation metal element, and a nonconductive support element. The isolation metal element is disposed between the first antenna and the second antenna. The third antenna defines a notch region. The second antenna at least partially extends into the notch region. The distance between the third antenna and the second antenna is from 1 mm to 10 mm. The first antenna, the second antenna, the third antenna, and the isolation metal element are all disposed on the nonconductive support element.
January 24, 2020
June 17, 2021
Shih Ming CHUANG, Jyun Nian LIN, Chih-Ming CHEN
Abstract: The invention provides a method of treating, inhibiting and/or preventing fatty liver disease in a patient in need thereof, comprising administering an effective amount of a cyclohexenone compound of the following formula (I) to said patient,
Abstract: A system and method for a content-centric personalized recommendation engine that includes processing user data comprised of user feature data as input to a user neural network model and yielding a user embedding; processing the user embedding through a matchmaking neural network, which is a trained model to map user embeddings and content embeddings to a shared dimensional space, and yielding a user shared-item embedding; and applying analysis of the user shared-item embedding in selecting at least one content item associated with a content shared-item embedding within the matchmaking neural network.
Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. An epitaxial pillar of SiGe or Ge extends upward from the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric layer is arranged over an upper surface of the substrate and is disposed around the lower epitaxial region to extend over outer edges of the well region. The dielectric layer has inner sidewalls that contact outer sidewalls of the epitaxial pillar. A dielectric sidewall structure has a bottom surface that rests on an upper surface of the dielectric layer and has inner sidewalls that extend continuously from the upper surface of the dielectric layer to a top surface of the epitaxial pillar.
January 14, 2021
June 3, 2021
Chih-Ming Chen, Lee-Chuan Tseng, Ming Chyi Liu, Po-Chun Liu
Abstract: A multi-body device includes a first machine body, a second machine body, a rotating member, a first magnetic member, a second magnetic member, and a stopper. The second machine body is pivoted to a pivot side of the first machine body. The rotating member is pivoted to the pivot side of the first machine body and located beside the second machine body. The first magnetic member is disposed at the second machine body. The second magnetic member is disposed at a portion of the rotating member corresponding to the first magnetic member. Two corresponding ends of the first magnetic member and the second magnetic member are magnetically repulsive to each other. The stopper is driven by the second machine body and disposed at the pivot side of the first machine body, so as to stretch into or retreat from a rotation path of the rotating member.