Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes introducing a first processing gas of an atomic layer deposition (ALD) process on the semiconductor substrate in a chamber; introducing a second processing gas of the ALD process on the semiconductor substrate in the chamber; creating an exhaust flow from the chamber; monitoring a concentration of the first processing gas of the ALD process in the exhaust flow; in response to the monitored concentration of the first processing gas of the ALD process in the exhaust flow, introducing a cleaning gas into the chamber.

Abstract: The embodiments of the disclosure provide a method for selecting a task network, a system and a method for determining actions based on sensing data. The method of the embodiments of the disclosure includes: mapping the sensing data into an input feature vector; feeding the input feature vector into a specific task network to generate an output feature vector via the specific task network, in which the specific task network is trained based on a plurality of first individuals and a plurality of second individuals, the first individuals belong to a first population, the second individuals belong to a second population, and the first individuals and the second individuals are evolved via a coevolution process; and determining an output action according to the output feature vector, and setting a second specific individual based on the output action, in which the second specific individual belongs to the second population.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: A data capturing device and a data calculation system and method are provided. The data capturing device transmits sensing data to a computing device, and receives a machine learning model and a library corresponding to a current scene from the computing device. The data capturing device runs the machine learning model to capture feature data from the sensing data, runs the library to convert a requirement into a service task, and then transmits the feature data and the service task.

Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer into a chamber. The method also includes creating an exhaust flow from the chamber. The method further includes depositing a film on the semiconductor wafer by supplying a processing gas into the chamber. In addition, the method includes detecting, with a use of a gas sensor, a concentration of the processing gas in the exhaust flow and generating a detection signal according to a result of the detection. The method further includes supplying a cleaning gas into the processing chamber for a time period after the film is formed on the semiconductor wafer. The time period is determined based on the detection signal.

Abstract: The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

Abstract: A system and method for question-based content answering that can include training a query-content model; indexing a collection of media content data forming indexed content; receiving a query input through a computer implemented computer interface; applying a retrieval model to the query input and indexed content and determining candidate content segment results, which may include: retrieving an initial set of candidate content segments by performing a keyword search of the query input on the indexed content, and ranking, based in part on language modeling using the query-content model, the initial set of candidate content segments into the candidate content segment results; and presenting the candidate content segment results in the computer interface.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

Abstract: A method for dynamically processing and playing multimedia contents and a multimedia play apparatus are provided. A topic map is generated based on a title. The topic map has a plurality of nodes, and each node corresponds to one of the multimedia contents. Multiple node groups are obtained through permutation and combination of these nodes. A target group that matches a constraint is found among these node groups. A play order of each node in the target group is determined according to at least one reward table. One or more multimedia contents included in the target group are processed and played according to the play order.

Abstract: Toast notifications can be managed via a toast adapter and plugins. A toast adapter can function as an intermediary between a service and an application that interfaces with the Windows toast framework. The service can employ plugins that are configured to send toast requests to the toast adapter. The toast requests can include metadata from which the toast adapter can construct toast content. The toast adapter can then interface with the application to submit the toast content to the Windows toast framework to cause the toast notifications to be displayed. When a user interacts with a toast notification, the arguments that the Windows toast framework provides can be relayed by the application to the toast adapter. The toast adapter may then identify which plugin was the source of the toast notification and provide an indication of the user's interaction with the toast notification to the plugin.

Abstract: A command transmitting method, a memory control circuit unit and a memory storage device are provided. The method includes: transmitting a plurality of command sequences and a state read command sequence to a memory interface coupled to a rewritable non-volatile memory module; and storing the plurality of command sequences by the memory interface, and transmitting the state read command sequence to the rewritable non-volatile memory module.

Abstract: A method of maintaining a server rack within a predetermined temperature range, including the removal of heat from the server rack by both conductive and convective heat transfer. Thermal contact structure is placed between the server rack and a heat sink. The heat sink may be in the form of a housing containing a radiator in one wall, and a bank of fans in an opposite wall to draw a coolant gas through the radiator. The coolant gas contacts the heat sink and a portion of the coolant gas is directed towards the server rack. Cooling liquid is supplied to the radiator by a chiller, which can be adjacent to the heat sink or located remotely from the heat sink.

Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

Abstract: A wavelength conversion wheel includes a turntable, a wavelength conversion layer, a pressure ring, an anodized layer and a balance weight. The turntable has an inner ring portion and a ring-shaped irradiation portion. The ring-shaped irradiation portion is connected to an outer edge of the inner ring portion. The ring-shaped irradiation portion includes a wavelength conversion region. The wavelength conversion layer is disposed on the wavelength conversion region. The pressure ring presses against the inner ring portion and has a first surface facing away the turntable. The anodized layer is disposed on the first surface. The balance weight is disposed on the anodized layer, wherein the surface roughness of the anodized layer is 1 ?m to 10 ?m. The wavelength conversion wheel of the invention has better reliability. A projection device with the wavelength conversion wheel is further provided.

Abstract: An antenna system includes a first antenna, a second antenna, a third antenna, an isolation metal element, and a nonconductive support element. The isolation metal element is disposed between the first antenna and the second antenna. The third antenna defines a notch region. The second antenna at least partially extends into the notch region. The distance between the third antenna and the second antenna is from 1 mm to 10 mm. The first antenna, the second antenna, the third antenna, and the isolation metal element are all disposed on the nonconductive support element.

Abstract: A cable tie including a belt, a base, a restricting part, and a controlling part is provided. The belt has a contacting side. The base is connected to a first end of the belt and has a through-hole. The restricting part is connected to the base and is located in the through-hole. The controlling part has a connecting portion, and a protruding portion and a pressing portion away from the connecting portion, and the connecting portion is connected to the base. When the belt passes through the through-hole, the contacting side defines a tying area for accommodating a tied object, and the protruding portion protrudes into the tying area. When the tied object pushes the protruding portion towards outside the tying area, the pressing portion presses the restricting part to restrict a movement of the belt.

Abstract: A server rack for supporting a plurality of servers of varying heights includes opposing side walls each including one or more vertical tracks. A first column of holes is disposed in one of the vertical tracks and a second column of holes disposed in a corresponding opposing vertical track of the opposing side wall. A third and fourth column of holes are disposed adjacent to and corresponding to the first column of holes and the second column of holes. A first pair of opposing rails are each disposed on the opposing side walls. Each of the opposing rails are mechanically secured to the one or more vertical tracks at the first and second columns of holes. The first pair of opposing rails are configured to support a first server having a first height. For the first and second columns of holes, the spacing between holes is predefined to accommodate opposing rails to support servers of the first height.

Abstract: In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer into a chamber. The method also includes creating an exhaust flow from the chamber. The method further includes depositing a film on the semiconductor wafer by supplying a processing gas into the chamber. In addition, the method includes detecting, with a use of a gas sensor, a concentration of the processing gas in the exhaust flow and generating a detection signal according to a result of the detection. The method further includes supplying a cleaning gas into the processing chamber for a time period after the film is formed on the semiconductor wafer. The time period is determined based on the detection signal.

Abstract: A method for fabricating a photomask is provided. The method includes several operations. A photomask substrate, having a chip region and a peripheral region adjacent to the chip region, is received. A reference pattern is formed by emitting one first radiation shot and a first beta pattern is formed by emitting a plurality of second radiation shots in the peripheral region. The plurality of second radiation shots are emitted along a first direction. A roughness of a boundary of the first beta pattern along the first direction is compared to a roughness of a boundary of the reference pattern along the first direction from a top view perspective. An alignment of the plurality of second radiation shots is adjusted if a result of the comparison exceeds a tolerance, or the photomask is formed. A photomask structure thereof and a method for manufacturing a semiconductor are also provided.