Abstract: A control device for driving a display device includes a first channel having a first output device. The first output device outputs first transfer data to the first channel according to an enable signal. The first transfer data includes a preamble code and a function code. The first output device includes a preamble-code generator and a function-code generator. The preamble-code generator outputs a bit number of a predetermined value as the preamble code according to the bit number of preamble code. The bit number and the predetermined value are defined by the user. The function-code generator converts each of a function-code number of command codes into a respective bit code, and the function-code number of bit codes are output as the function code according to a lookup table. The mapping relationship between the command code and the bit code is stored in the lookup table.

Abstract: A wavelength conversion wheel includes a turnable disc, a wavelength conversion layer, a pressure ring, an anodized layer and a balance weight. The turnable disc has an inner ring portion and a ring-shaped irradiation portion. The ring-shaped irradiation portion is connected to an outer edge of the inner ring portion. The ring-shaped irradiation portion includes a wavelength conversion region. The wavelength conversion layer is disposed on the wavelength conversion region. The pressure ring presses against the inner ring portion and has a first surface facing away the turnable disc. The anodized layer is disposed on the first surface. The balance weight is disposed on the anodized layer, wherein the surface roughness of the anodized layer is 1 ?m to 10 ?m. The wavelength conversion wheel of the invention has better reliability. A projection device with the wavelength conversion wheel is further provided.

Abstract: An optimization method includes generating a constrained causal graph according to an observation data received from a distributed unit, performing a finite domain representation planning using the constrained causal graph to generate an action data about a plurality of radio unit parameters after optimization, and outputting the action data to the distributed unit. A number of a plurality of causal variables of the constrained causal graph and a causal structure of the constrained causal graph are determined at a time.

Abstract: A wireless transmission system includes a signal-transmitting device and a signal-receiving device. The signal-transmitting device is disposed in a remote-control apparatus for transmitting wireless signals wherein the remote-control apparatus is a mouse. The signal-receiving device is installed on an electronic apparatus to receive the wireless signals and trigger operations in response the wireless signals. The signal-receiving device includes a patch antenna including a dielectric substrate having a first surface and a second surface opposite to the first surface, a ground layer disposed on the first surface, and a radiating metal layer. The radiating metal layer is disposed on the second surface and includes a radiation receiving surface. A first position of the radiation receiving surface is separated from the ground layer by a first distance, and a second position of the radiation receiving surface is separated from the ground layer by a second distance less than the first distance.

Abstract: An acceleration system includes a plurality of modules. Each of the plurality of modules includes at least one central processing unit, at least one graphics processing unit, at least one field programmable gate array, or at least one application specific integrated circuit. At least one of the plurality of modules includes at least another of the plurality of modules such that the acceleration system is structural and nested.

Abstract: The present invention provides methods and compositions for treating advanced stage non-small cell lung cancer by cyclohexenone compounds.

Abstract: An uplink route decision method for a mobile communication system, wherein the mobile communication system determines an uplink path of a user equipment (UE) in the mobile communication system, includes obtaining an attribute of a user plane function (UPF) required by the UE, and determining whether the UPF is located in a local or a remote place according to an artificial intelligence model.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device, including a substrate including a first semiconductor material and a semiconductor layer extending into an upper surface of the substrate and including a second semiconductor material with a different band gap than the first semiconductor material. The semiconductor device also includes a passive cap including a first dielectric material and disposed along the upper surface of the substrate and on opposite sides of the semiconductor layer, and a photodetector in the semiconductor layer. The first dielectric material includes silicon nitride.

Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. An epitaxial pillar of SiGe or Ge extends upward from the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric layer is arranged over an upper surface of the substrate and is disposed around the lower epitaxial region to extend over outer edges of the well region. The dielectric layer has inner sidewalls that contact outer sidewalls of the epitaxial pillar. A dielectric sidewall structure has a bottom surface that rests on an upper surface of the dielectric layer and has inner sidewalls that extend continuously from the upper surface of the dielectric layer to a top surface of the epitaxial pillar.

Abstract: A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

Abstract: An antenna structure includes a feeding radiation element, a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a switch circuit. The feeding radiation element has a feeding point. The second radiation element is coupled through the first radiation element to the feeding radiation element. The third radiation element is coupled to the second radiation element. The fourth radiation element is coupled to the second radiation element. The fourth radiation element and the third radiation element extend in different directions. The fifth radiation element has a tuning point, and is coupled to the feeding radiation element. The feeding radiation element is disposed between the first radiation element and the fifth radiation element. The switch circuit selectively couples the tuning point to a ground voltage.

Abstract: The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

Abstract: An acceleration system includes a plurality of modules. Each of the plurality of modules includes at least one central processing unit, at least one graphics processing unit, at least one field programmable gate array, or at least one application specific integrated circuit. At least one of the plurality of modules includes at least another of the plurality of modules such that the acceleration system is structural and nested.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: An artificial intelligence planning method and a real-time radio access network intelligence controller are provided. The method includes: obtaining current input data; predicting a prediction result based on the current input data by using a causal reasoning model; generating a current state at least based on the prediction result; treating the current state as an initial state of an artificial intelligence planner and finding a specific planning path in a planning tree based on the initial state by using the artificial intelligence planner; and controlling a target system based on a plurality of action instructions.

Abstract: A construction system for recurrent Bayesian networks, a construction method for recurrent Bayesian networks, a computer-readable recording medium, a non-transitory computer program product, and a radio network control system are provided. The method is performed by a processor, and includes: establishing an initial population, and setting the initial population as a current population; establishing a corresponding recurrent Bayesian network for each CPPN in the current population, to obtain a set of recurrent Bayesian networks corresponding to the current population; evolving the current population by using an evolutionary algorithm and a fitness function to obtain a next population; determining whether a termination condition is met; and repeatedly performing the foregoing steps in response to the termination condition being not met, and selecting a solution network in the current population as the task network based on the fitness function in response to the termination condition being met.

Abstract: An artificial intelligence planning method and an artificial intelligence planning device are provided. When a considered specific application has a plurality of planning layers, a corresponding planning node set and a planning tree are built for each of the planning layers according to a domain file, and all planning nodes in the planning node set of each of the planning layers satisfy a plurality of corresponding preset conditions. In addition, a corresponding planning path may be determined in each of the planning trees, and a plurality of action commands may be accordingly issued to the specific application to achieve a corresponding target state. In this way, the specific application having multiple planning layers may be equipped with self-configuration, self-optimizing, and self-healing functions and is then implemented as a self-organizing application.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.