Abstract: A semiconductor structure includes an isolation structure formed on a substrate, a gate-all-around transistor structure formed on the isolation structure, a via electrically coupled to a gate terminal of the gate-all-around transistor structure, and a buried conductive pad formed within the isolation structure and electrically coupled to the via. The buried conductive pad can extend through the isolation structure in two dimensions, such as in both a vertical dimension and a horizontal dimension. The semiconductor structure can provide advantages in terms of routing flexibility, among other possible advantages.

Abstract: The present disclosure provides a semiconductor device and a method for fabricating a semiconductor device. The semiconductor device includes a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer, at least a portion of the ferroelectric layer is between the metal gate layer and the substrate, wherein the ferroelectric layer includes hafnium oxide-based material, the hafnium oxide-based material includes a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method includes forming a first dielectric bonding layer over a first dielectric structure, which is disposed on a first substrate and surrounds a first plurality of interconnects. The first dielectric bonding layer is patterned to form a first recess exposing one of the first plurality of interconnects. A first conductive bonding segment is formed within the first recess. A second dielectric bonding layer is formed over a TSV extending through a second substrate. The second dielectric bonding layer is patterned to form a second recess exposing the TSV. A second conductive bonding segment is formed within the second recess. The first substrate is bonded to the second substrate along an interface comprising dielectric and conductive regions. The conductive region includes a conductive interface between the first and second conductive bonding segments.

Abstract: An end cap for a carriage of a linear guide. The end cap has a closed lubrication port which is openable by operatively connecting a lubrication fitting to the lubrication port. The is formed by injection molding and the closed lubrication port of the end cap is formed by rotary demolding.

Abstract: A cockpit display system includes a cockpit, a first display apparatus, a second display apparatus, a first light sensor, a second light sensor and a brightness distribution calculation module. The first light sensor is suitable for detecting a first ambient light brightness. The second light sensor is suitable for detecting a second ambient light brightness. The brightness distribution calculation module is suitable for respectively calculating a first brightness, a second brightness, a third brightness and a fourth brightness of the first display area and the second display area of the first display apparatus and the third display area and the fourth display area of the second display apparatus under a same display gray level according to the first ambient light brightness and the second ambient light brightness. The first brightness, the second brightness, the third brightness and the fourth brightness are different from each other.

Abstract: A memory device includes an array of resistive memory cells with a plurality of word lines connected to the array of resistive memory cells. A voltage compensation controller is configured to determine a word line voltage to be applied to a selected word line of the plurality of word lines. A word line driver is configured apply the determined word line voltage to the selected word line.

Abstract: The present invention provides a circuitry including a regulator and a control circuit is disclosed. The regulator is configured to receive an input signal to generate an output voltage. The control circuit is configured to select one of a first reference voltage and a second reference voltage to serve as an output reference voltage according to an output signal of the regulator, and generate a control signal according to the output reference voltage to control a voltage level of the output voltage of the regulator.

Abstract: A method of forming a semiconductor device includes forming a fin of alternating layers of semiconductor nanostructures and sacrificial layers, laterally etching sidewall portions of the sacrificial layers, and depositing additional semiconductor material over the sidewalls of the semiconductor nanostructures and sacrificial layers. Following deposition of a dielectric material over the additional semiconductor material and additional etching, the remaining portions of the semiconductor structures and additional semiconductor material collectively form a hammer shape at each opposing side of the fin. Epitaxial source/drain regions formed on the opposing sides of the fin will contact the heads of the hammer shapes.

Abstract: Aspects of the disclosure provide a semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first channel structure, a first gate dielectric layer surrounding the first channel structure, and a first metal gate surrounding first gate dielectric layer. The first metal gate includes a first metal layer in direct contact with the first gate dielectric layer and a first metal cap in direct contact with the first gate dielectric layer, wherein the first metal cap is in direct contact with the first metal layer.

Abstract: A method related to magnetic field interference and a sensing system are provided. In the method, magnetic field uniformity within a time period is determined. Movement situation within the time period is determined. Magnetic field interference situation is determined according to the magnetic field uniformity and the movement situation.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: A sensing circuit coupled to a sensor includes a first transistor, a second transistor, a third transistor, a fourth transistor, and an oscillator. The first transistor, coupled to a first current source and the sensor, receives a sensing current from the sensor. A gate terminal of the first transistor is connected to a source terminal of the first transistor. The second transistor, coupled to the first transistor and a second current source, generates a first current according to the sensing current. The first current is greater than the sensing current. The third transistor, coupled to the second transistor and the second current source, generates a second current according to the first current. The fourth transistor, coupled to the third transistor, generates a third current. The oscillator is coupled to the fourth transistor. The oscillator generates a signal having an oscillation frequency according to the third current.

Abstract: A method includes fabricating semiconductor structures extending in a first direction and fabricating gate-conductors extending in a second direction intersecting the semiconductor structure. The method also includes patterning a first metal layer to form horizontal conducting lines extending in the first direction, and patterning the second metal layer to form vertical conducting lines extending in the second direction. A first vertical conducting line is aligned with a first gate-conductor underneath and a second vertical conducting line is aligned with a vertical boundary of a circuit cell. The first vertical conducting line is directly connected to a first horizontal conducting line through a first pin-connector, and the second vertical conducting line is directly connected to a second horizontal conducting line through a second pin-connector.

Abstract: A method of forming a three-dimensional (3D) memory device includes: forming, over a substrate, a layer stack having alternating layers of a first conductive material and a first dielectric material; forming trenches extending vertically through the layer stack from an upper surface of the layer stack distal from the substrate to a lower surface of the layer stack facing the substrate; lining sidewalls and bottoms of the trenches with a memory film; forming a channel material over the memory film, the channel material including an amorphous material; filling the trenches with a second dielectric material after forming the channel material; forming memory cell isolation regions in the second dielectric material; forming source lines (SLs) and bit lines (BLs) that extend vertically in the second dielectric material on opposing sides of the memory cell isolation regions; and crystallizing first portions of the channel material after forming the SLs and BLs.

Abstract: A semiconductor device according to the present disclosure includes a first isolation feature and a second isolation feature, a fin structure extending lengthwise along a first direction and sandwiched between the first isolation feature and the second isolation feature along a second direction perpendicular to the first direction, a first channel member disposed over the first isolation feature, a second channel member disposed over the second isolation feature, and a gate structure disposed over and wrapping around the first channel member and the second channel member.

Abstract: A gas tube, a gas supply system containing the same and a semiconductor manufacturing method using the same are provided. The gas tube includes a porous material body and a resistant sheath surrounding the porous material body. The porous material body has a hollow tube structure and an empty cavity inside the hollow tube structure. The porous material body is hydrophobic and has a plurality of pores therein. The resistant sheath is disposed on the porous material body and surrounds the porous material body. The resistant sheath includes a plurality of holes penetrating through the resistant sheath.

Abstract: Techniques for performing phase detect operations are described. The techniques include obtaining first measurements with a set of half-shield phase-detect sensors; obtaining second measurements with a set of non-phase detect sensors that are not configured as phase-detect sensor; and determining a phase difference based on the first measurements and the second measurements.

Abstract: A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device comprises a substrate, a conductive element disposed within a first region of the substrate, and a first transistor disposed within a second region adjacent to the first region of the substrate. The conductive element is electrically connected to an electrode of the first transistor, and the conductive element penetrates the substrate and is configured to receive a supply voltage.

Abstract: This disclosure is directed to a sunroof device having a window frame assembly, a pair of linkage assemblies, a panel assembly, a first electrical connector and a second electrical connector. The window frame assembly has a pair of rails. The linkage assemblies are disposed on the rails respectively. The panel assembly is disposed on the pair of linkage assemblies. The first electrical connector on the window frame assembly has a plugging slot and an opening, the opening is located at a side of the first electrical connector and extended to a top of the first electrical connector. The second electrical connector on the panel assembly has a conductive terminal. When the panel assembly rotates, the conductive terminal is plugged in the plugging slot through the opening and movable with the panel assembly in the opening.