Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a redistribution layer over the substrate. The chip structure includes a bonding pad over the redistribution layer. The chip structure includes a shielding pad over the redistribution layer and surrounding the bonding pad. The chip structure includes an insulating layer over the redistribution layer and the shielding pad. The chip structure includes a bump over the bonding pad and the insulating layer. A sidewall of the bump is over the shielding pad.

Abstract: A flushing switch device with automatic pressing stroke detection is provided, which is applied to the flushing switches of a toilet. The flushing switch device with automatic pressing stroke detection includes a capacitive sensor, an actuator, and a protector. The capacitive sensor senses a user's hand movements to generate a sensing signal. The actuator includes a driver and a pressing mechanism; the driver drives the pressing mechanism to press one of the flushing switches. The protector includes a detector and a controller; the detector detects a load variation during an operation of the actuator to generate a detection signal; the controller receives the sensing signal and correspondingly generates a control signal to control the actuator according to the sensing signal and the detection signal.

Abstract: A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.

Abstract: Provided are devices with conductive contacts and methods for forming such devices. A method includes forming a lower conductive contact in a dielectric material and over a structure, wherein the lower conductive contact has opposite sidewalls that extend to and terminate at a top surface. The method also includes separating an upper portion of each sidewall from the dielectric material and locating a barrier material between the upper portion of each sidewall and the dielectric material. Further, the method includes forming an upper conductive contact over the lower conductive contact.

Abstract: A system for manufacturing an integrated circuit includes a non-transitory computer readable medium configured to store executable instructions, and a processor coupled to the non-transitory computer readable medium. The processor is configured to execute the executable instructions for placing a set of gate layout patterns on a first layout level, and generating a cut feature layout pattern extending in the first direction. The set of gate layout patterns correspond to fabricating a set of gate structures of the integrated circuit. The cut feature layout pattern is on the first layout level, and overlap each of the layout patterns of the set of gate layout patterns at a same position in the second direction. The cut feature layout pattern identifies a location of a removed portion of a gate structure of the set of gate structures.

Abstract: A method for implementing requests from an app by a SIM in a mobile phone comprises the steps of: binding an app to a BIP server by a mobile phone; delivering a request command to the BIP server from the mobile phone; converting the request command to an APDU format, packing the converted request command in the APDU format in a request packet, and delivering the request packet to an IP of a SIM by the BIP server; receiving and unpacking the request packet to have the converted request command, and providing the converted request command to the SIM; executing the request command to have a result by the SIM; delivering the result in a response packet to the BIP server via the mobile network relayed; unpacking the response packet to fetch the result, and delivering the result to the mobile phone for the app by the BIP server.

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Abstract: An electrical connection structure includes a dielectric layer stack of a plurality of dielectric layers including a first dielectric layer as an uppermost layer, and a second dielectric layer under the first dielectric layer, a plurality of metal layers in the plurality of dielectric layers, a via stack in the plurality of dielectric layers that connects the plurality of metal layers, an upper metal layer on the dielectric layer stack over the via stack, and an upper dielectric layer on the dielectric layer stack and including an upper dielectric layer opening over the upper metal layer and the via stack. A number of first vias in the first dielectric layer, may be less than or equal to a number of second vias in the second dielectric layer, and the number of second vias in the second dielectric layer may be less than or equal to 3.

Abstract: The present invention relates to an optical stack and an organic light emitting diode display including the optical stack, wherein the optical stack has an adhesive layer. The adhesive layer is disposed between a cover plate and a circular polarizer component, between the circular polarizer component and a touch component, or between the touch component and a display component. Wherein, a storage modulus at 60° C. of the adhesive layer is between 15 kPa and 30 kPa, and a ratio of a storage modulus at ?30° C. to the storage modulus at 60° C. of the adhesive layer is between 6 and 16.

Abstract: A microbial carrier and a device for treating wastewater are provided. The microbial carrier includes a bacteriophilic material and a plurality of foam cells, wherein the foam cells are disposed in the bacteriophilic material. The bactericidal material is a reaction product of a composite, wherein the composition includes a hydrophobic polyvinyl alcohol and a cross-linking agent, wherein the surface energy of the hydrophobic polyvinyl alcohol is 30 mJ/m2 to 58 mJ/m2.

Abstract: A system for compliant interaction between parties may include a computing device hosting a compliance and insight platform executing on the computing device. The platform may include a secure room hosted on the platform. The secure room may include a restricted environment that hosts interaction data between users based on one or more interactions rules of the secure room. The secure room may be configured to receive interaction data from a first user in the secure room, provide at least a portion of the interaction data to a second user in the secure room, and blind and restrict the first user and the second user from each other's identity. The platform may further include a moderator of the secure room. The moderator may be configured to moderate the interaction data in the first secure room.

Abstract: Provided is a curable composition having superior weather resistance which is obtained from a cured product containing a polyoxyalkylene polymer comprising a reactive silicon group. The curable composition contains (A) a reactive-silicon-group-containing polyoxyalkylene polymer having a number-average molecular weight of 2,000 to 50,000 and containing 1.1 to 5 reactive silicon groups within a single molecule, and (B) from 0.01 to 100 parts by weight of a powdered-glass-based filler based on 100 parts of the component (A).

Abstract: A semiconductor die includes semiconductor devices located on a semiconductor substrate, metal-insulator-metal corner structures overlying the semiconductor devices and located in corner regions of the semiconductor die. Metal-insulator-metal corner structures are located in the corner regions of the semiconductor die. Each of the metal-insulator-metal corner structures has a horizontal cross-sectional shape selected from a triangular shape and a polygonal shape including a pair of laterally-extending strips extending along two horizontal directions that are perpendicular to each other and connected to each other by a connecting shape.

Abstract: An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.

Abstract: An airtight device includes a container and an airtight cover on the container, and the airtight cover includes a fixing bracket, a door, and a pressuring handle. The fixing bracket has a through hole and a guiding slot, and the through hole communicates with internal space of the container. The guiding slot has adjacent first and second top surfaces, and the second top surface is higher than the first top surface. The door selectively covers the through hole. The pressuring handle pivoted on the door has a first section, a second section, and a rotating axis between the first and second sections, and the first section rotates relative to the second section. The second section receives a force to drive the first section to move from below the second top surface to below the first top surface such that the rotating axis pressures the door.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

Abstract: A computer device and a multi-computer system are provided. The computer device includes a central processing unit (CPU), a wireless connection circuit, and a switch circuit. The CPU is coupled to a display to provide an enabling display signal to the display according to a hot plug detection signal provided from the display. The wireless connection circuit receives one of a wireless connection signal and a wireless disconnection signal from a wireless input device. The switch circuit is coupled between the display and the CPU and coupled to the wireless connection circuit. The switch circuit provides the hot plug detection signal to the CPU when the wireless connection circuit receives the wireless connection signal, and masks the hot plug detection signal from the CPU when the wireless connection circuit receives the wireless disconnection signal.

Abstract: An electronic device and a performance optimization method thereof are provided. The electronic device includes a battery module, a processor, and a controller. The battery module is configured to supply power to the electronic device. The processor has a power limit. The controller is configured to monitor a charging and discharging current of the battery module. In a power connection mode, the controller analyzes a status of the battery module and adjusts the power limit of the processor according to the charging and discharging current.

Abstract: A method for reducing carbon dioxide to manufacture a multi-carbon hydrocarbon compound includes steps as follows. A reduction reaction with separation and purification system is provided, which includes a carbon dioxide absorption tower, a reactor, a gas-liquid separation device, a liquid-phase purification device and a gas-phase purification device. An absorption step is performed, wherein a carbon dioxide gas is absorbed to form a mixed solution. A photocatalysis step is performed, wherein the mixed solution is reacted with a photocatalyst to form a carbon-based compound. A separation step is performed, wherein the carbon-based compound is separated to form a liquid-phase mixture and a gas-phase mixture. A liquid-phase purification step is performed, wherein the liquid-phase mixture is purified. A gas-phase purification step is performed, wherein the gas-phase mixture is separated and purified to form a multi-carbon hydrocarbon compound.

Abstract: An example apparatus to retain a computer power brick in a power brick holder includes a plate and a positioning mechanism removably attached at any of a plurality of positions on the plate. The positioning mechanism is attached at a preset position on the plate based on a size of the power brick.