Patents by Inventor Chin-An Chang

Chin-An Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220344486
    Abstract: A semiconductor device and methods of fabricating the same are disclosed. The method can include forming a fin structure on a substrate, forming a source/drain (S/D) region on the fin structure, forming a gate structure on the fin structure adjacent to the S/D region, and forming a capping structure on the gate structure. The forming the capping structure includes forming a conductive cap on the gate structure, forming a cap liner on the conductive cap, and forming a carbon-based cap on the cap liner. The method further includes forming a first contact structure on the S/D region, forming an insulating cap on the first contact structure, and forming a second contact structure on the conductive cap.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 27, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chin CHANG, Ming-Huan Tsai, Li-Te Lin, Pinyen Lin
  • Publication number: 20220328440
    Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 13, 2022
    Inventors: Chih-Fan Huang, Hui-Chi Chen, Kuo-Chin Chang, Chien-Huang Yeh, Hong-Seng Shue, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 11469143
    Abstract: A semiconductor device includes a semiconductor substrate, a source/drain region, a source/drain contact, a conductive via and a first polymer layer. The source/drain region is in the semiconductor substrate. The source/drain contact is over the source/drain region. The source/drain via is over the source/drain contact. The first polymer layer extends along a first sidewall of the conductive via and is separated from a second sidewall of the conductive via substantially perpendicular to the first sidewall of the conductive via.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: October 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Chin Chang, Li-Te Lin, Pinyen Lin
  • Publication number: 20220319917
    Abstract: A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.
    Type: Application
    Filed: June 21, 2022
    Publication date: October 6, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang SUN, Po-Chin CHANG, Akira MINEJI, Zi-Wei FANG, Pinyen LIN
  • Patent number: 11450588
    Abstract: A method for forming a chip package structure is provided. The method includes disposing a chip over a substrate. The method includes forming a heat-spreading wall structure over the substrate. The heat-spreading wall structure is adjacent to the chip, and there is a first gap between the chip and the heat-spreading wall structure. The method includes forming a first heat conductive layer in the first gap. The method includes forming a second heat conductive layer over the chip. The method includes disposing a heat-spreading lid over the substrate to cover the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shin Chi, Chien-Hao Hsu, Kuo-Chin Chang, Cheng-Nan Lin, Mirng-Ji Lii
  • Publication number: 20220265058
    Abstract: Provided are an air cell device and an air mattress system thereof. The air cell device includes an air cell which has therein an upper connection segment and a lower connection segment. The upper connection segment and the lower connection segment each have a curved portion whereby the air cell is partitioned to become a multilayered air cell so as to mitigate air cell bending or air cell inversion, thereby improving the lying human being's comfort.
    Type: Application
    Filed: February 15, 2022
    Publication date: August 25, 2022
    Inventors: CHIH-KUANG CHANG, SHENG-WEI LIN, CHIN-CHANG LIN, YUE-YIN CHAO, YU-HAO CHEN
  • Publication number: 20220252078
    Abstract: The present disclosure relates to a fan system and a fan driving method. The fan system includes a first fan and a second fan, which are used to operate according to a first driving signal and a second driving signal, respectively, and to generate a first rotating speed signal and a second rotating speed signal. The first rotating signal has a first phase, and the second rotating signal has a second phase. The second fan is electrically connected to the first fan to receive the first rotating speed signal, and obtain a detected phase difference between the first phase and the second phase. The second fan is further configured to selectively increase or decrease the duty cycle of the second driving signal according to the detected phase difference, so that the second phase is adjusted to maintain a preset phase difference with the first phase.
    Type: Application
    Filed: March 29, 2021
    Publication date: August 11, 2022
    Inventors: Yu-Chung TSAO, Chin-Chang LEE
  • Publication number: 20220241759
    Abstract: A regeneration method of a nitrogen-containing carbon catalyst includes the following steps: roasting the nitrogen-containing carbon catalyst in a nitrogen-containing atmosphere to obtain a regenerated nitrogen-containing carbon catalyst. The method is a universal method, which is suitable for nitrogen-doped carbon catalysts and can be used to regenerate a nitrogen-containing carbon catalyst for producing vinyl chloride (VC) through 1,2-dichloroethane cracking. The method can greatly reduce the production cost of the catalyst and increase the service life of the catalyst, and a regeneration process thereof is fast, simple, and controllable, and does not require high temperatures.
    Type: Application
    Filed: November 26, 2020
    Publication date: August 4, 2022
    Applicants: DALIAN INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES, FORMOSA PLASTICS CORPORATION
    Inventors: Sisi FAN, Jinming XU, Yanqiang HUANG, Hongmin DUAN, Tao ZHANG, MING-HUNG CHENG, Wan-tun HUNG, Yu-Cheng CHEN, Chien-Hui WU, Ya-Wen CHENG, Ming-Hsien WEN, Chao-Chin CHANG, Tsao-Cheng HUANG, Lu-Chen YEH
  • Patent number: 11399520
    Abstract: A smart aquaculture method is provided for an aquaculture system including a breeding pool, a feeding machine and a camera disposed in the breeding pool. The method includes: taking an underwater image by the camera; calculating a feed remaining amount according to the underwater image; and controlling the feeding machine according to the feed remaining amount to dispense feed to the breeding pool.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: August 2, 2022
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: Ing-Jer Huang, Chin-Chang Hung, Yun-Nan Chang
  • Patent number: 11381036
    Abstract: In an example, a power plug may include a connector to engage with a power receptacle of an electronic device, and a removable lock ring disposed around the connector. The lock ring may include a lock tab disposed on the lock ring and extending in a direction away from a longitudinal axis of the power plug. The lock tab may insert into a lock notch of the power receptacle.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: July 5, 2022
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chin-Chang Ho, Jen-Hsun Hsieh, Po Cheng Liao, Chen Ee Eunice Goh
  • Patent number: 11380639
    Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: July 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Fan Huang, Hui-Chi Chen, Kuo-Chin Chang, Chien-Huang Yeh, Hong-Seng Shue, Dian-Hau Chen, Yen-Ming Chen
  • Patent number: 11373902
    Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, an etch stop layer, a dielectric structure, and a conductive material. The gate structure is on the semiconductor substrate. The etch stop layer is over the gate structure. The dielectric structure is over the etch stop layer, in which the dielectric structure has a ratio of silicon to nitrogen varying from a middle layer of the dielectric structure to a bottom layer of the dielectric structure. The conductive material extends through the dielectric structure.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Chang Sun, Po-Chin Chang, Akira Mineji, Zi-Wei Fang, Pinyen Lin
  • Patent number: 11366604
    Abstract: A physically unclonable function includes a flash memory, a current comparator and a controller. The flash memory includes a plurality of memory cells. A method of operating the physically unclonable function circuit includes the controller setting the plurality of memory cells to an initial data state, the controller setting the plurality of memory cells between the initial data state and an adjacent data state of the initial data state, the current comparator reading a first current from a memory cell in a first section of the plurality of the memory cells, the current comparator reading a second current from a memory cell in a second section of the plurality of the memory cells, and the current comparator outputting a random bit according to the first current and the second current.
    Type: Grant
    Filed: March 24, 2021
    Date of Patent: June 21, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Chin Chang, Ming-Jen Chang, Cheng-Hsiao Lai, Yu-Syuan Lin, Chi-Fa Lien, Ying-Ting Lin, Yung-Tsai Hsu
  • Publication number: 20220176510
    Abstract: A base assembly includes a first horizontal brace, a second horizontal brace, a first horizontal interconnection interconnecting front ends of the first and second horizontal braces, a second horizontal interconnection interconnecting rear ends of the first and second horizontal braces, and first, second, third and fourth vertical posts each releasably secured to the underside of the worktable and the rear ends of the first and second horizontal braces; a control switch secured to the front ends of the first and second horizontal braces, and the first interconnection; and a detachable worktable including first and second sliding rods, an opening, first and second bifurcations, a housing; a chute; first and second bossed holes, two opposite third bossed holes, two opposite fourth bossed holes, first and second C-shaped clamps, a transverse second threaded hole, and screws.
    Type: Application
    Filed: December 9, 2020
    Publication date: June 9, 2022
    Inventor: Chin-Chin Chang
  • Publication number: 20220179464
    Abstract: An example apparatus to retain a computer power brick in a power brick holder includes a plate and a positioning mechanism removably attached at any of a plurality of positions on the plate. The positioning mechanism is attached at a preset position on the plate based on a size of the power brick.
    Type: Application
    Filed: July 24, 2019
    Publication date: June 9, 2022
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Chin-Chang Ho, Hung-Ming Lin, Hong-Tao Hsieh, Che-An Yao
  • Patent number: 11356614
    Abstract: An electronic device includes a body and an image capturing assembly mounted on the body. The image capturing assembly comprising an imaging device and a device control assembly coupled to the imaging device to control a movement of the imaging device along a central axis of the image capturing assembly to allow the imaging device to be positioned at multiple positions along the central axis of the image capturing assembly. The device control assembly includes a first guide member, a second guide member rotatably disposed within the first guide member, and an inner body movably disposed within the second guide member. In response to a rotational motion of the second guide member with respect to the first guide member, the inner body is to move in axial direction with respect to the second guide member to move the imaging device along the central axis of the image capturing assembly.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: June 7, 2022
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chin-Chang Ho, Jen-Hsun Hsieh, Po Cheng Liao, Chen Ee Eunice Goh
  • Patent number: 11338276
    Abstract: A catalyst for preparing chloroethylene by cracking 1,2-dichloroethane and a preparation and regeneration method thereof are disclosed in the present application. A catalyst for preparing chloroethylene by cracking 1,2-dichloroethane includes a carrier and a nitrogen-containing carbon as an active component of the catalyst with the nitrogen-containing carbon being loaded on the carrier. The method for preparing the catalyst includes: supporting an organic matter on an inorganic porous carrier and then performing a carbonization-nitridation process by pyrolysis in an atmosphere containing the nitrogen-containing compound. The method for regenerating the catalyst includes: calcinating the catalyst with deactivated carbon deposit in an oxidizing atmosphere to remove all the carbonaceous portions on the surface, and repeating the above preparation process of the catalyst.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: May 24, 2022
    Assignees: DALIAN INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES, FORMOSA PLASTICS CORPORATION
    Inventors: Jinming Xu, Sisi Fan, Yanqiang Huang, Fao Zhang, Chin Lien Huang, Wan Tun Hung, Tu Cheng Chen, Chien Hui Wu, Ya Wen Cheng, Ming Hsien Wen, Chao Chin Chang, Tsao Cheng Huang
  • Publication number: 20220157605
    Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.
    Type: Application
    Filed: January 31, 2022
    Publication date: May 19, 2022
    Inventors: Shih-Chun HUANG, Chiu-Hsiang CHEN, Ya-Wen YEH, Yu-Tien SHEN, Po-Chin CHANG, Chien-Wen LAI, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Li-Te LIN, Pinyen LIN, Ru-Gun LIU, Chin-Hsiang LIN
  • Publication number: 20220149552
    Abstract: A board to board connector includes a first male connector and a second male connector. The first male connector includes a first number of pins. The second male connector is aligned with the first male connector and includes a second number of pins. The first male connector is configured to be removably electrically coupled to a first female connector including a third number of pins equal to the first number and the second male connector is configured to be removably electrically coupled to a second female connector including a fourth number of pins equal to the second number. The first male connector and the second male connector are also configured to be removably electrically coupled to a single third female connector including a fifth number of pins equal to the first number plus the second number.
    Type: Application
    Filed: July 31, 2019
    Publication date: May 12, 2022
    Applicant: Hewlett-Packard Development Company, L.P.
    Inventors: Hung-Ming Lin, Chin-Chang Ho, Jui-Hsuan Chang, Shaheen Saroor
  • Patent number: D960572
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: August 16, 2022
    Inventor: Ju-Chin Chang