Abstract: A semiconductor die includes a semiconductor substrate, an interconnect structure, and a conductive bump. The interconnect structure is disposed on and electrically connected to the semiconductor substrate. The interconnect structure includes stacked interconnect layers. Each of the stacked interconnect layers includes a dielectric layer and an interconnect wiring embedded in the dielectric layer. The interconnect wiring of a first interconnect layer among the stacked interconnect layers further includes a first via and second vias. The first via electrically connected to the interconnect wiring. The second vias connected to the interconnect wiring, and the first via and the second vias are located on a same level height. The conductive bump is disposed on the interconnect structure. The conductive bump includes a base portion and a protruding portion connected to the base portion, and the base portion is between the protruding portion and the first via.

Abstract: The present application relates to a dispatch method for a production line in a semiconductor process, a storage medium and a semiconductor device. The dispatch method for a production line in a semiconductor process can acquire an overlay error reference curve of a product lot to be exposed in equipment and set an overlay error range according to the overlay error reference curve. At the end of exposure, an overlay error for the product lot to be exposed can be acquired, and it can be determined whether the overlay error falls into the overlay error range. If the overlay error for the product lot to be exposed does not fall into the overlay error range, the product lot to be exposed can be continuously machined by this equipment.

Abstract: The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

Abstract: A hanging device includes an accommodation main body, a sliding assembly, a hook, and the accommodation main body that includes two parallel sidewalls, in which a first vertical path is defined between the two sidewalls. The sliding assembly is movably connected between the two sidewalls to move relative to the main body along the first vertical path. The sliding assembly further includes a sliding rail which defines a second vertical path, and the hook is movably connected to the sliding rail to move relative to the sliding assembly along the second vertical path.

Abstract: An airtight device includes a container and an airtight cover on the container, and the airtight cover includes a fixing bracket, a door, and a pressuring handle. The fixing bracket has a through hole and a guiding slot, and the through hole communicates with internal space of the container. The guiding slot has adjacent first and second top surfaces, and the second top surface is higher than the first top surface. The door selectively covers the through hole. The pressuring handle pivoted on the door has a first section, a second section, and a rotating axis between the first and second sections, and the first section rotates relative to the second section. The second section receives a force to drive the first section to move from below the second top surface to below the first top surface such that the rotating axis pressures the door.

Abstract: A fixing device includes a main body, a sliding block, and a fixing rod. The main body has a sliding rail and a guiding hole, and the sliding rail which is disposed at a front side of the main body vertically extends. The guiding hole adjoins the sliding rail and horizontally extends through the main body. The sliding block is slidably connected to the sliding rail. The fixing rod is movably connected to the sliding block extending through the guiding hole, and the sliding block is configured to move along the sliding rail and enable the guiding hole to drive the fixing rod to horizontally move.

Abstract: A wire straightening tool contains: a press portion, an urging portion, and a rotation portion. The press portion includes a fixing orifice, the urging portion is an urging element mounted on a bottom of the press portion away from the receiving orifice and configured to urge the press portion to return back to an original position after pressing the press portion. The rotation portion is accommodated in the receiving orifice of the press portion, and the rotation portion includes a rotatable knob and a wire removal element. The rotatable knob has a coupling orifice passing through the rotatable knob, and the wire removal element is received in the coupling orifice. The wire removal element has multiple through orifices defined thereon.

Abstract: An immersion cooling system includes a tank, an isolation plate and a condenser. The tank includes a base plate and a sidewall connected with the base plate. The sidewall defines with the base plate a space configured to accommodate a cooling liquid. The isolation plate connects with the sidewall or the base plate and divides the space into a first subsidiary space and a second subsidiary space. The first subsidiary space is configured to accommodate electronic equipment which is immersed in the cooling liquid. The isolation plate and the base plate are separated from each other. The sidewall surrounds the condenser. A vertical projection of the condenser towards the base plate at least partially overlaps with the second subsidiary space. The electronic equipment evaporates a portion of the cooling liquid to form a vapor. The condenser is configured to condense the vapor into a liquid form.

Abstract: The present disclosure describes a semiconductor device with a nitrided capping layer and methods for forming the same. One method includes forming a first conductive structure in a first dielectric layer on a substrate, depositing a second dielectric layer on the first conductive structure and the first dielectric layer, and forming an opening in the second dielectric layer to expose the first conductive structure and a portion of the first dielectric layer. The method further includes forming a nitrided layer on a top portion of the first conductive structure, a top portion of the portion of the first dielectric layer, sidewalls of the opening, and a top portion of the second dielectric layer, and forming a second conductive structure in the opening, where the second conductive structure is in contact with the nitrided layer.

Abstract: An integrated touch module and a touch display device are provided. The integrated touch module has a touch sensing structure formed on a polymer film. The polymer film, a liquid crystal phase retardation layer, and a linear polarizing layer constitute a circular polarizing element. The average reflectance of the circular polarizing element in the visible light range is less than 5%, and the standard deviation of the reflectance is less than 0.2%. The touch display device includes the integrated touch module.

Abstract: A vapor chamber having an adhering configuration and a manufacturing method thereof are provided. The manufacturing method includes: a dispensing step implemented by forming a ring-shaped adhesive onto an inner surface of a first metallic sheet; a filling step implemented by filling a working liquid in a space jointly defined by the inner surface of the first metallic sheet and the ring-shaped adhesive; a bonding step implemented by bonding the first metallic sheet and a second metallic sheet together in a vacuum chamber through the ring-shaped adhesive, so as to form a semi-finished product that defines an enclosed thermal flow space therein, in which the working liquid is arranged in the thermal flow space; and a solidifying step implemented by placing the semi-finished product in a solidifying environment so as to solidify the ring-shaped adhesive to form a sealing frame.

Abstract: A method of forming a semiconductor structure is provided. A layout of a substrate is provided. The layout includes a surface having an inner region and an outer region surrounding the inner region. An under bump metallurgy (UBM) pad region within the outer region is defined. The UBM pad region is partitioned into a first zone and a second zone, wherein the first zone faces towards a center of the substrate, and the second zone faces away from the center of the substrate. The substrate is provided according to the layout, wherein the providing of the substrate includes forming a conductive via in the substrate. The conductive via is disposed outside the second zone and at least partially overlaps the first zone from a top view perspective. A UBM pad is formed over the conductive via and within the UBM pad region.

Abstract: An example ventilation system for a computing device includes: a cover slidably engageable with a housing of the computing device to a closed position defining an internal space of the computing device, the cover having first ventilation holes; a system mesh slidably engaged with the cover, the system mesh having second ventilation holes; and a stopper disposed in the internal space of the computing device, the stopper to stop the system mesh at a predefined position when the cover is engaged with the housing in the closed position, wherein the first ventilation holes and the second ventilation holes overlap to define system ventilation holes for the computing device.

Abstract: A memory device includes a first stack structure, a second stack structure, a channel pillar, a storage layer, and a conductive pillar. The first stack structure includes a first insulating layer and a first conductive layer located on the first insulating layer. The second stack structure is located on the first stack structure and includes a plurality of second conductive layers and a plurality of second insulating layers which alternate with each other. The channel pillar penetrates through the second stack structure and extends to the first stack structure. The storage layer is located between the channel pillar and the first stack structure and between the channel pillar and the second stack structure. The conductive pillar is located in the first conductive layer and electrically connected to the first conductive layer and the substrate.

Abstract: A computer device and a multi-computer system are provided. The computer device includes a central processing unit (CPU), a wireless connection circuit, and a switch circuit. The CPU is coupled to a display to provide an enabling display signal to the display according to a hot plug detection signal provided from the display. The wireless connection circuit receives one of a wireless connection signal and a wireless disconnection signal from a wireless input device. The switch circuit is coupled between the display and the CPU and coupled to the wireless connection circuit. The switch circuit provides the hot plug detection signal to the CPU when the wireless connection circuit receives the wireless connection signal, and masks the hot plug detection signal from the CPU when the wireless connection circuit receives the wireless disconnection signal.

Abstract: A wire straightening tool contains: a press portion, an urging portion, and a rotation portion. The press portion includes a fixing orifice, the urging portion is an urging element mounted on a bottom of the press portion away from the receiving orifice and configured to urge the press portion to return back to an original position after pressing the press portion. The rotation portion is accommodated in the receiving orifice of the press portion, and the rotation portion includes a rotatable knob and a wire removal element. The rotatable knob has a coupling orifice passing through the rotatable knob, and the wire removal element is received in the coupling orifice. The wire removal element has multiple through orifices defined thereon.

Abstract: A semiconductor structure includes a semiconductor chip, a substrate and a plurality of bump segments. The bump segments include a first group of bump segments and a second group of bump segments collectively extended from an active surface of the semiconductor chip toward the substrate. Each bump segment of the second group of bump segments has a cross-sectional area greater than a cross-sectional area of each bump segment of the first group of bump segments. The first group of bump segments includes a first bump segment and a second bump segment. Each of the first bump segment and the second bump segment includes a tapered side surface exposed to an environment outside the bump segments. A portion of a bottom surface of the second bump segment is stacked on the first bump segment, and another portion of the bottom surface of the second bump segment is exposed to the environment.

Abstract: A semiconductor device includes a semiconductor substrate, a source/drain region, a source/drain contact and a conductive via and a first polymer layer. The source/drain region is in the semiconductor substrate. The source/drain contact is over the source/drain region. The conductive via is over the source/drain contact. From a top view, the conductive via has two opposite long sides and two opposite short sides connecting the long sides, and the short sides are shorter than the long sides and more curved than the long sides.

Abstract: A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

Abstract: A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.