Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A display apparatus includes a substrate, an element layer, a protective film, a mechanical member, a first adhesive layer and a second adhesive layer. An opening of the protective film is located between a first portion of the protective film and a second portion of the protective film. The first portion of the protective film, the second portion of the protective film and the opening of the protective film are respectively overlapped with a first portion of the substrate, a second portion of the substrate and a third portion of the substrate. The first adhesive layer and the second adhesive layer are respectively disposed on a first surface and a second surface of the mechanical member. The third portion of the substrate is connected between the first portion of the substrate and the second portion of the substrate, and the third portion of the substrate is bent.

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: A curved display integrates in a portable information handling system housing to present visual images to an end user about an arc for improved viewing angle. The portable information handling system rotates the housing from an open position that exposes the display in a curved configuration to a closed position that brings the display against a main housing portion with the display transitioned from the curved to a planar configuration for a low profile storage position. Display curve is managed with a curved support frame that bends to a planar form, a pair of perpendicular-axis hinges that rotate opposing housings about a horizontal axis and manage display curve about a vertical axis, and a dual axis hinge with a sliding bracket that adjusts for greater housing spacing in the curved configuration.

Abstract: A curved display integrates in a portable information handling system housing to present visual images to an end user about an arc for improved viewing angle. The portable information handling system rotates the housing from an open position that exposes the display in a curved configuration to a closed position that brings the display against a main housing portion with the display transitioned from the curved to a planar configuration for a low profile storage position. Display curve is managed with a curved support frame that bends to a planar form, a pair of perpendicular-axis hinges that rotate opposing housings about a horizontal axis and manage display curve about a vertical axis, and a dual axis hinge with a sliding bracket that adjusts for greater housing spacing in the curved configuration.

Abstract: A data protection system is disclosed. The data protection system comprises a cloud management platform and at least one data storage device. The cloud management platform includes a database stored with at least one key. The data storage device includes a data storage unit, a microprocessor, and a network communication component. The microprocessor is communicated with the cloud management platform by the network communication component. The data storage unit comprises a controller and a plurality of flash memories. The flash memories store a plurality of encrypted data. The microprocessor sends a key extraction request including a unique code to the cloud management platform. The cloud management platform selects the key matching to the unique code in the key extraction request from the database, and transmits the selected key to the data storage device. The controller of the data storage device decrypts the encrypted data by the key.

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

Abstract: A recombinant microorganism for producing 2,3-butanediol consisting of selecting at least three groups from uridine diphosphate glucose phosphate uroglycan transferase gene (galU), acetyl alcohol dehydrogenase gene (acoA), acetyl phosphate transferase gene (pta), adenosine glucosylphosphate transferase gene (glgC), lactose dehydrogenase gene (ldhA), and phosphodiesterase gene (pdeC) which were modified.

Abstract: A method of fabricating a grinding tool includes providing an abrasive particle, and cutting the abrasive particle with a laser beam so that the cut abrasive particle has four tips adjacent to one another, a cavity of a generally cross shape extending between the four tips, and a material discharge surface at an end of the cavity. The laser beam is applied along a plurality of parallel first cutting lines and a plurality of parallel second cutting lines, the second cutting lines intersecting the first cutting lines, at least the first cutting lines being grouped into a first, a second and a third region, the second region being located between the first and third regions, a number of cutting passes repeated along each of the first cutting lines in each of the first and third regions increasing as the first cutting line is nearer to the second region, and the laser beam repeating a plurality of cutting passes along each of the first cutting lines in the second region.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: A grinding tool includes a substrate, and at least an abrasive particle affixed to the substrate. The abrasive particle has a base, and four tips adjacent to one another protruding from the base, the base having a cavity of a generally cross shape extending between the four tips, the cavity including a material discharge surface disposed between two adjacent ones of the four tips, the material discharge surface being located at an end of the cavity and adjacent to a side surface of the base, an inner material angle between the material discharge surface and the side surface being between about 120 degrees and about 160 degrees. Moreover, embodiments described herein include a method of manufacturing the grinding tool.

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

Abstract: A stereoscopic marker device includes: a polyhedral cube, including at least four flat surfaces, wherein the at least four flat surfaces are used as one primary marker and at least three secondary markers respectively, the primary marker includes a primary graphic code, the three secondary markers individually include a first secondary graphic code, a second secondary graphic code, and a third secondary graphic code, and the primary graphic code is used for providing spatial coordinate information, which is used for calculating six degrees of freedom (DOF) attitude data; and a spike-shaped body, combined with the polyhedral cube and configured to be fixed on a surgery site.

Abstract: A start-and-stop detecting apparatus for an I3C bus is provided. The start-and-stop detecting apparatus is connected with a serial data line and a serial clock line. The start-and-stop detecting apparatus includes a first start detecting circuit, a second start detecting circuit and a first OR gate. The first start detecting circuit receives a data signal, a clock signal and a reset signal, and generates a first control signal and a first output signal. The second start detecting circuit receives the data signal, the clock signal, the reset signal and the first control signal, and generates a second output signal. A first input terminal of the first OR gate receives the first output signal. A second input terminal of the first OR gate receives the second output signal. An output terminal of the first OR gate generates a start signal.

Abstract: Examples of methods for updating power delivery controllers are described herein. In some examples, a method may include updating a power delivery controller. In some examples, the power delivery controller may be updated using power delivery controller instructions from interface memory. In some examples, the power delivery controller may be updated in response to an apparatus shutdown.

Abstract: Methods for forming semiconductor structures are disclosed herein. An exemplary method includes forming a gate structure having a dummy gate stack over a substrate, performing a gate replacement process, such that the dummy gate stack is replaced with a metal gate stack, and forming a non-silane based oxide capping layer over the gate structure. The gate replacement process includes removing a portion of the dummy gate stack from the gate structure, thereby forming a gate trench. A work function layer is formed in the gate trench, a blocking layer is formed in the gate trench over the work function layer, and a metal layer (including, for example, aluminum) is formed in the gate trench over the blocking layer. The blocking layer includes titanium and nitrogen with a titanium to nitrogen ratio that is greater than one. In some implementations, the work function layer is formed over a dielectric layer.

Abstract: A moisture absorbent product prepared according to the present invention is characterized by adjusting a composition ratio of a metal chloride, a metal oxide, a cellulose derivative, and a lipid to a specific range, thereby suppressing corrosion, rust, external leakage of a product due to moisture release in an environment such as high temperature while maintaining a high moisture absorption rate, and minimizing a volume change due to moisture absorption. Thus, the moisture absorbent product can be usefully used as a moisture absorption product embedded in a vehicle lamp.