Patents by Inventor Chin Chung

Chin Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210108965
    Abstract: The application provides an ear thermometer with a probe cover ejection device. The ear thermometer comprises a holding body and a measuring assembly disposed at one end of the holding body, which comprises a probe, a rotating member, and a socket. The rotating member includes a ring cover with an opening formed in a middle of the ring cover, at least one first abutting portion axially extended from a lateral side of the ring cover, and a lever portion radially extended from the lateral side of the ring cover. The socket includes a circular bottom surface and a closed section and an open section defined on a periphery of the circular bottom surface, a side wall surface vertically provided on the closed section, an accommodating space sandwiched between the side wall surface and the circular bottom surface, and at least one second abutting portion formed on the circular bottom surface.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 15, 2021
    Inventors: Yi-Shun WANG, Chin-Chung YU
  • Publication number: 20210100860
    Abstract: The present invention relates a use of Antrodia cinnamomea composition, consisting of 50-99% (W/W) of Antrodia cinnamomea solid-state cultivated mycelium water/alcohol extracts and 1-50% (W/W) of cut-log wood cultivated fruiting body water/alcohol extracts, in the preparation of auxiliary agents for chemotherapy. The Antrodia cinnamomea composition of the present invention has proven effects on improving the anti-cancer effects when combined with chemotherapy drugs, and reducing the toxicity and side effects caused by chemotherapy treatments. The composition of present invention can be applied to use as an auxiliary for anti-cancer agents.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 8, 2021
    Inventors: Chin-Chung LIN, Chiu-Ping LO, Yun-Yu CHEN, Tzung-Hsien LAI, Li-Chuan HSU
  • Patent number: 10972839
    Abstract: A head band structure of headset includes a retractable adjusting block and a head band group. The retractable adjusting block includes an upper cover, a sliding slice, an elastic piece and a lower cover. The sliding slice has at least one blocking portion. A substantial middle of the elastic piece is arched upward to form a convex surface. The head band group is connected with the retractable adjusting block. The head band group has a head band, and two end covers disposed to two opposite ends of the head band. A surface of each end cover has a waveform locking portion, and at least one stopping frame disposed at one end of the waveform locking portion. The convex surface keeps contacting with the waveform locking portion.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: April 6, 2021
    Assignee: Cheng Uei Precision Industry Co., Ltd.
    Inventors: Chi Ming Tseng, Chin Chung Lin
  • Publication number: 20210098301
    Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: Chung-Chiang Wu, Hsin-Han Tsai, Wei-Chin Lee, Chia-Ching Lee, Hung-Chin Chung, Cheng-Lung Hung, Da-Yuan Lee
  • Publication number: 20210082768
    Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 18, 2021
    Inventors: Shao-Jyun Wu, Hung-Chi Wu, Chia-Ching Lee, Pin-Hsuan Yeh, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Sheng-Liang Pan, Huan-Just Lin
  • Publication number: 20210083118
    Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen
  • Publication number: 20210057280
    Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: Chung-Chiang Wu, Hung-Chin Chung, Hsien-Ming Lee, Chien-Hao Chen, Ching-Hwanq Su
  • Publication number: 20210048861
    Abstract: A start-and-stop detecting apparatus for an I3C bus is provided. The start-and-stop detecting apparatus is connected with a serial data line and a serial clock line. The start-and-stop detecting apparatus includes a first start detecting circuit, a second start detecting circuit and a first OR gate. The first start detecting circuit receives a data signal, a clock signal and a reset signal, and generates a first control signal and a first output signal. The second start detecting circuit receives the data signal, the clock signal, the reset signal and the first control signal, and generates a second output signal. A first input terminal of the first OR gate receives the first output signal. A second input terminal of the first OR gate receives the second output signal. An output terminal of the first OR gate generates a start signal.
    Type: Application
    Filed: December 10, 2019
    Publication date: February 18, 2021
    Inventors: Kun-Hua Huang, Chang-Chin CHUNG, Kun-Chih CHEN
  • Publication number: 20210051408
    Abstract: A head band structure of headset includes a retractable adjusting block and a head band group. The retractable adjusting block includes an upper cover, a sliding slice, an elastic piece and a lower cover. The sliding slice has at least one blocking portion. A substantial middle of the elastic piece is arched upward to form a convex surface. The head band group is connected with the retractable adjusting block. The head band group has a head band, and two end covers disposed to two opposite ends of the head band. A surface of each end cover has a waveform locking portion, and at least one stopping frame disposed at one end of the waveform locking portion. The convex surface keeps contacting with the waveform locking portion.
    Type: Application
    Filed: December 9, 2019
    Publication date: February 18, 2021
    Inventors: Chi Ming Tseng, Chin Chung Lin
  • Patent number: 10920168
    Abstract: A coffee lubricant having nanoparticles is provided. It consists of 36 to 40 wt % of glycerin, 1 to 7 wt % of gum arabic, 0.3 to 1.3 wt % of nanoparticles, and remaining part of coffee biofuel. In which, the nanoparticles are CuO. The coffee biofuel is extracted from coffee dregs and has a viscosity of 60 to 70 cSt at a temperature of 40 degrees Celsius. It can reduce the friction coefficient and operating temperature. In addition, it can replace the mineral oil.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: February 16, 2021
    Assignee: NATIONAL FORMOSA UNIVERSITY
    Inventors: Jeng-Haur Horng, Chin-Chung Wei, Shin-Yuh Chern, Kuang-Hsuan Peng, Yang-Yuan Chen, Chia-Chun Yu
  • Publication number: 20210036145
    Abstract: A semiconductor device includes a first fin, a second fin, and a third fin protruding above a substrate, where the third fin is between the first fin and the second fin; a gate dielectric layer over the first fin, the second fin, and the third fin; a first work function layer over and contacting the gate dielectric layer, where the first work function layer extends along first sidewalls and a first upper surface of the first fin; a second work function layer over and contacting the gate dielectric layer, where the second work function layer extends along second sidewalls and a second upper surface of the second fin, where the first work function layer and the second work function layer comprise different materials; and a first gate electrode over the first fin, a second gate electrode over the second fin, and a third gate electrode over the third fin.
    Type: Application
    Filed: July 31, 2019
    Publication date: February 4, 2021
    Inventors: Chun-Neng Lin, Ming-Hsi Yeh, Hung-Chin Chung, Hsin-Yun Hsu
  • Publication number: 20210029838
    Abstract: A display, including a carrying main body, a flexible carrier film, a double-sided tape, and an adhesive layer, is provided. The flexible carrier film includes a first bonding section and a second bonding section respectively disposed on two opposite sides of the carrying main body, and a bending section connected between the first bonding section and the second bonding section. The flexible carrier film has an inner surface and an outer surface opposite to each other. The inner surface has at least one first groove at the bending section. The flexible carrier film has a display layer thereon. At least a part of the display layer is connected to the outer surface at the second bonding section. The double-sided tape is disposed between the first bonding section and the carrying main body. The adhesive layer is disposed between the inner surface and the carrying main body at the bending section.
    Type: Application
    Filed: July 1, 2020
    Publication date: January 28, 2021
    Applicant: Au Optronics Corporation
    Inventors: Chih-Tsung Lee, Chih-Chieh Lin, Yi-Wei Tsai, Ko-Chin Chung
  • Patent number: 10867864
    Abstract: Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chiang Wu, Hsin-Han Tsai, Wei-Chin Lee, Chia-Ching Lee, Hung-Chin Chung, Cheng-Lung Hung, Da-Yuan Lee
  • Publication number: 20200390012
    Abstract: An information handling system printed circuit board includes solder pads that accept footprint compatible integrated circuits, such as charger integrated circuits that provide power with different choke circuit supporting components. Solder pads for supporting components include first and second conductive areas sized to accept a first supporting component, each of the first and second conductive areas including an intervening non-conductive area that manages positioning of a smaller second supporting component at solder reflow.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 10, 2020
    Applicant: Dell Products L.P.
    Inventors: Yu-Lin Tsai, Chia-Hsien Lu, Chun-Min He, RungLung Lin, Chin-Chung Wu
  • Publication number: 20200377816
    Abstract: A coffee lubricant having nanoparticles is provided. It consists of 36 to 40 wt % of glycerin, 1 to 7 wt % of gum arabic, 0.3 to 1.3 wt % of nanoparticles, and remaining part of coffee biofuel. In which, the nanoparticles are CuO. The coffee biofuel is extracted from coffee dregs and has a viscosity of 60 to 70 cSt at a temperature of 40 degrees Celsius. It can reduce the friction coefficient and operating temperature. In addition, it can replace the mineral oil.
    Type: Application
    Filed: May 29, 2019
    Publication date: December 3, 2020
    Inventors: JENG-HAUR HORNG, CHIN-CHUNG WEI, SHIN-YUH CHERN, KUANG-HSUAN PENG, YANG-YUAN CHEN, CHIA-CHUN YU
  • Publication number: 20200352544
    Abstract: The present disclosure provides a positioning method for head and neck assessment comprising positioning a probe to the head and neck structures of a subject according to reference planes defined by light beams.
    Type: Application
    Filed: July 23, 2020
    Publication date: November 12, 2020
    Applicant: AmCad Biomed Corporation
    Inventors: Argon CHEN, Hao-Chien WANG, Chiung-Nien CHEN, Pei-Lin LEE, Chin-Chung SHU, Edward Chia-Hao LIU, Shu-Ning YU
  • Publication number: 20200335404
    Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 22, 2020
    Inventors: Da-Yuan LEE, Hung-Chin CHUNG, Hsien-Ming LEE, Kuan-Ting LIU, Syun-Ming JANG, Weng CHANG, Wei-Jen LO
  • Patent number: 10732679
    Abstract: A portable information handling system rotationally couples housing portions with a mono barrel hinge having sequential axle rotation about 360 degrees. A dual eccentric shaft hinge element rotates each axle about a cable routed between the axles so that a full 360 degrees of rotation is achieve with a thin height profile. Each axle shaft has a flat face that is maintained adjacent the cable rotating with an eccentric pattern relative to the cable.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: August 4, 2020
    Assignee: Dell Products L.P.
    Inventors: Chin-Chung Wu, Hsien-Wei Chen, Chih-Ping Chang, Te-Sen Chin, An-Chung Hsieh, Jihun Yeom, Anthony J. Sanchez
  • Publication number: 20200235334
    Abstract: A display apparatus includes a substrate, an element layer, a protective film, a mechanical member, a first adhesive layer and a second adhesive layer. An opening of the protective film is located between a first portion of the protective film and a second portion of the protective film. The first portion of the protective film, the second portion of the protective film and the opening of the protective film are respectively overlapped with a first portion of the substrate, a second portion of the substrate and a third portion of the substrate. The first adhesive layer and the second adhesive layer are respectively disposed on a first surface and a second surface of the mechanical member. The third portion of the substrate is connected between the first portion of the substrate and the second portion of the substrate, and the third portion of the substrate is bent.
    Type: Application
    Filed: October 4, 2019
    Publication date: July 23, 2020
    Applicant: Au Optronics Corporation
    Inventors: Chih-Tsung Lee, Zih-Shuo Huang, Yi-Wei Tsai, Ko-Chin Chung, Ming-Chang Hsu, Heng-Chia Hsu
  • Patent number: 10699966
    Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Da-Yuan Lee, Hung-Chin Chung, Hsien-Ming Lee, Kuan-Ting Liu, Syun-Ming Jang, Weng Chang, Wei-Jen Lo