Abstract: A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well.

Abstract: In some embodiments, the present disclosure relates to an image sensor device. The image sensor device includes an image sensing element disposed within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element. The plurality of protrusions respectively include a sidewall having a first segment oriented at a first angle and a second segment over the first segment. The second segment is oriented at a second angle that is larger than the first angle. One or more absorption enhancement layers are arranged over and between the plurality of protrusions. The first angle and the second angle are acute angles measured through the substrate with respect to a horizontal plane that is parallel to a second side of the substrate opposite the first side.

Abstract: A method for electrochemically selectively removing ions using a composite electrode is provided. The composite electrode includes a composite having a carbon support and an inorganic material immobilized on the carbon support.

Abstract: A metal-oxide semiconductor transistor includes a substrate, a gate insulating layer disposed on a surface of the substrate, and a metal gate disposed on the gate insulating layer, wherein at least one of the length or the width of the metal gate is greater than or equal to approximately 320 nanometers, and the metal gate has at least one plug hole. The metal-oxide semiconductor transistor further includes at least one insulating plug disposed in the plug hole and two diffusion regions disposed respectively at two sides of the metal gate in the substrate.

Abstract: A system for providing location awareness in a building automation system includes a mesh network of lighting devices on a first floor of a building and a second mesh network of lighting devices on a second floor of the building each aggregating a tracking tag signals at a floor level gateway of the building automation system.

Abstract: A light guide plate, a backlight module and a display device are provided. The light guide plate includes a main body and plural prism portions. The main body has a first extending direction and a second extending direction. The main body includes a light-incident surface extending along the first extending direction and an optical surface connected to the light-incident surface. The optical surface has a first region, a second region and a third region which are arranged along the second extending direction. The prism portions are disposed on the optical surface and extend along the second extending direction. An occupied area ratio of the prism portions located in the first region is greater than an occupied area ratio of the prism portions located in the second region and is smaller than an occupied area ratio of the prism portions located in the third region.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: A photographing lens includes a first lens, a second lens, a third lens, a fourth lens, and a fifth lens in order from an object side to an image side along an optical axis. The first lens is a meniscus lens with negative refractive power. The second lens is a lens with negative refractive power, in which an image-side surface of the second lens is concave. The third lens is a lens with positive refractive power, in which an image-side surface of the third lens is convex. The fourth lens is a lens with positive refractive power. The fifth lens is a lens with negative refractive power, in which an object-side surface of the fifth lens is concave. The photographing lens has an excellent image resolving ability.

Abstract: The present disclosure provides a semiconductor structure having an ultra thick metal (UTM). The semiconductor structure includes a substrate, a metal layer over the substrate, and an UTM over the metal layer. An area density of the UTM is greater than 40% and a thickness of the UTM is equal to or greater than 6 micrometer. The present disclosure provides a method for manufacturing a semiconductor structure having a UTM. The method includes patterning a dielectric layer with a plurality of trenches by a first mask, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, and selectively plating conductive materials in the plurality of trenches.

Abstract: A transistor structure includes a source region and a drain region disposed in a substrate, extending along a first direction. A polysilicon layer is disposed over the substrate, extending along a second direction perpendicular to the first direction, wherein the polysilicon layer includes a first edge region, a channel region and a second edge region formed as a gate region between the source region and the drain region in a plane view. The polysilicon layer has at least a first opening pattern at the first edge region having a first portion overlapping with the gate region; and at least a second opening pattern at the second edge region having a second portion overlapping with the gate region.

Abstract: A binder for capacitive deionization electrode is provided, which is formed by reacting a polyether polyol, a diisocyanate, and a diol having a hydrophobic side chain. The binder may bind an electrode material and to form a capacitive deionization electrode. The electrode material and the binder may have a weight ratio of 90:5 to 90:25.

Abstract: In some embodiments, the present disclosure relates to an image sensor device. The image sensor device includes an image sensing element disposed within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element. The plurality of protrusions respectively include a sidewall having a first segment oriented at a first angle and a second segment over the first segment. The second segment is oriented at a second angle that is larger than the first angle. One or more absorption enhancement layers are arranged over and between the plurality of protrusions. The first angle and the second angle are acute angles measured through the substrate with respect to a horizontal plane that is parallel to a second side of the substrate opposite the first side.

Abstract: A method of manufacturing a composite material is provided. First, graphene oxide and activated carbon are provided individually. Graphene oxide and activated carbon are added into an alcohol to form a mixture. Then, the mixture is heated by microwave in a single step, so that graphene oxide is chemically reduced to form graphene at the active sites of the surface of the activated carbon uniformly, thereby forming a composite material. The embodied composite material is suitable for being the electrodes of the capacitive deionization (CDI) and supercapacitor application.

Abstract: A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.

Abstract: A method of forming a gate layout includes providing a gate layout design diagram comprising at least one gate pattern, disposing at least one insulating plug pattern in the gate pattern for producing a modified gate layout in a case where any one of a length and a width of the gate pattern is greater than or equal to a predetermined size, and outputting and manufacturing the modified gate layout onto a photomask. The predetermined size is determined by a process ability limit, and the process ability limit is a smallest gate size causing gate dishing when a chemical mechanical polishing process is performed to a gate.

Abstract: This disclosure provides a system of intelligent lights together with control devices and sensors communicating over a wireless network, with methods to allow the lights to take actions based on logical combinations of events generated by other devices. The lights can function autonomously as they have built-in functions of logic processing, storage and wireless communications which allow them to receive events and take actions according to the stored logic configuration data. Complete freedom in the grouping of lights as well as association of control devices and sensors to each individual lights is enabled by this system architecture. Seamless communication coverage is enabled by a wireless protocol that allows the light to form a mesh network.

Abstract: A tag signal from a tracking tag is received at a mesh node. Tag data is forwarded from a mesh node to a gateway, and from the gateway to an application layer in a server. Tag information is calculated by the application layer in the server. The tag information is transmitted back to the gateway, and from the gateway to the node.

Abstract: A linear gear shift mechanism includes a support rotator; transmission balls movably disposed at the support rotator and each provided with a cylindrical recess along radial direction thereof; driving posts with inward ends movably disposed in the cylindrical recesses along the radial direction of the support rotator; a gear shift unit movably connected to outward ends of the driving posts to drive the driving posts to rotate from the radial direction of the support rotator to but not reach the axial direction of the support rotator; an axial power input rotator having an inward-tilted power input annular surface; and an axial power output rotator having an inward-tilted power output annular surface, wherein the axial power input rotator and axial power output rotator flank and movably clamp the transmission balls between the inward-tilted power input annular surface, inward-tilted power output annular surface and outer circumferential surface of the support rotator.

Abstract: A method for storing large amounts of data on a wireless device, said method comprising the steps of placing a wireless device on a wireless transmission unit; initializing the wireless device for transmission of data; authenticating the wireless device with an associated account or profile; verifying the storage capacity of the wireless device; determining what wireless standard is implemented by the device; and transmitting data to the wireless device; whereby the transmitted information may be later viewed and or accessed locally from the wireless device.

Abstract: The present invention proposes a system for facilitating transmission of software files from the originating node to at least one target node by short range wireless communication link. The system comprises plurality of nodes, a bridge, an originating node and a target node wherein each node is enabled to trans-receive the data using short range communication link.