Patents by Inventor Ching Chu

Ching Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200006517
    Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.
    Type: Application
    Filed: August 2, 2018
    Publication date: January 2, 2020
    Applicant: United Microelectronics Corp.
    Inventors: Yi-Fan Li, Po-Ching Su, Cheng-Chia Liu, Yen-Tsai Yi, Wei-Chuan Tsai, Chih-Chiang Wu, Ti-Bin Chen, Ching-Chu Tseng
  • Patent number: 10522680
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a first fin structure over the base. The semiconductor device structure includes an isolation layer over the base. The first fin structure is partially in the isolation layer. The semiconductor device structure includes a first gate structure over and across the first fin structure. The semiconductor device structure includes a first source structure and a first drain structure on the first fin structure and on two opposite sides of the first gate structure. The first source structure and the first drain structure are made of an N-type conductivity material. The semiconductor device structure includes a cap layer covering the first source structure and the first drain structure. The cap layer is doped with a Group IIIA element.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 10522420
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first device region and a second device region, a first fin over the substrate in the first device region, a second fin over the substrate in the second device region, a first epitaxial feature over the first fin in the source/drain region of the first fin, a second epitaxial feature over the second fin in the source/drain region of the second fin, and a dielectric layer on the first and second epitaxial features. The first epitaxial feature is doped with a first dopant of a first conductivity and the second epitaxial feature is doped with a second dopant of a second conductivity different from the first conductivity. The dielectric layer is doped with the first dopant.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 10509275
    Abstract: A first substrate of a display panel includes scan lines disposed above a first base and extending along a first direction, and data lines disposed above the first base and extending along a second direction. An electrode between two data lines has two extending portions substantially parallel to the second direction and one bending portion, and the bending portion is positioned between and connects two extending portions. When a light passes the electrode, an extending direction of a dark pattern corresponding to the bending portion is substantially parallel to the first direction, the dark pattern has a first width in a first gray level and a second width in a second gray level, the first width is larger than the second width, the second gray level is a maximum gray level of the display panel and the first gray level is equal to half of all gray levels.
    Type: Grant
    Filed: January 2, 2019
    Date of Patent: December 17, 2019
    Assignee: Innolux Corporation
    Inventors: Bo-Chin Tsuei, Hsia-Ching Chu, Kuei-Ling Liu
  • Patent number: 10497628
    Abstract: A method of fabricating a fin-like field effect transistor (FinFET) device includes providing a semiconductor substrate having a region for forming p-type metal-oxide-semiconductor (PMOS) devices and a region for forming n-type metal-oxide-semiconductor (PMOS) devices, forming fin structures in both regions of the substrate separated by isolation features, first forming source/drain (S/D) features in the PMOS region, and subsequently forming S/D features in the NMOS region. First forming the PMOS S/D features and then forming the NMOS S/D features results in a greater extent of loss of isolation features in the PMOS region than in the NMOS region.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: December 3, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 10459144
    Abstract: A display module including a display panel and a backlight module disposed on a side of the display panel is provided. The backlight module includes a light guide, a light emitting diode, and a first optical film. The light emitting diode has a light emitting surface adjacent to the light guide. The first optical film is located between the light guide and the display panel. The first optical film includes a first prisms extending along a first direction. The first prisms has a first unit area and a second unit area. A first part of the first prism in the first unit area has a first average height larger than a second average height of a second part of the first prism in the second unit area.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: October 29, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Bo-Tsuen Chen, Hsia-Ching Chu, Kuei-Ling Liu, Kuo-Chang Su
  • Publication number: 20190311957
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first device region and a second device region, a first fin over the substrate in the first device region, a second fin over the substrate in the second device region, a first epitaxial feature over the first fin in the source/drain region of the first fin, a second epitaxial feature over the second fin in the source/drain region of the second fin, and a dielectric layer on the first and second epitaxial features. The first epitaxial feature is doped with a first dopant of a first conductivity and the second epitaxial feature is doped with a second dopant of a second conductivity different from the first conductivity. The dielectric layer is doped with the first dopant.
    Type: Application
    Filed: June 24, 2019
    Publication date: October 10, 2019
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20190294013
    Abstract: A display device is disclosed, which includes: a first substrate; a plurality of scan lines and a plurality of data lines, wherein the plurality of scan lines intersects with the plurality of data lines, the plurality of scan lines and the plurality of data lines are disposed above the first substrate, and the plurality of scan lines extend along a first direction; a common electrode disposed above the first substrate, wherein the common electrode has a first part extending along the first direction, a second part substantially parallels to the one of the plurality of data lines, and the first part connects to the second part.
    Type: Application
    Filed: June 14, 2019
    Publication date: September 26, 2019
    Inventors: Chien-Hung CHEN, Bo-Chin TSUEI, Hsia-Ching CHU, Mei-Chun SHIH
  • Patent number: 10423040
    Abstract: A liquid crystal display apparatus includes an array substrate, a liquid crystal layer, and an opposite substrate. The array substrate includes a first pixel and a second pixel. The first pixel includes a first active device and a first pixel electrode. The first pixel electrode is electrically connected to the first active device via a first through-hole. The first pixel electrode includes a plurality of first electrode strips extended along a first direction. The first through-hole is located at a first corner of the first pixel electrode. The second pixel includes a second active device and a second pixel electrode. The second pixel electrode is connected to the second active device via a second through-hole. The second pixel electrode includes a plurality of second electrode strips extended along a second direction. The second through-hole is located at a second corner of the second pixel electrode.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: September 24, 2019
    Assignee: Au Optronics Corporation
    Inventors: Peng-Bo Xi, Sung-Yu Su, Kung-Ching Chu
  • Patent number: 10424625
    Abstract: An organic light emitting diode display panel is disclosed, which includes: a first substrate, having a display region and a non-display region; an organic light emitting layer disposed above the first substrate; and a plurality of spacers disposed above the first substrate, the spacers including a first spacer, a second spacer, a third spacer and a fourth spacer, the first spacer and the second spacer being adjacently located in the display region, and the third spacer and the fourth spacer being adjacently located in the non-display region, wherein a first minimum distance is between the first spacer and the second spacer, a second minimum distance is between the third spacer and the fourth spacer, and the first minimum distance is different from the second minimum distance. In addition, the present invention also disclosed an organic light emitting diode display device including the same.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: September 24, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Jeng-Nan Lin, Kuang-Pin Chao, Ming-Chien Sun, Hsia-Ching Chu, Jia-Ren Lin
  • Patent number: 10415078
    Abstract: A method for monitoring resistance to a Bacillus thuringiensis pesticidal crystal protein is provided, which involves the measurement of protease activity or protease expression in the gut of adult insects.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: September 17, 2019
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Manfredo Jose Seufferheld, Chia-Ching Chu
  • Patent number: 10411412
    Abstract: An electrical receptacle connector includes an insulator, a first contact set, a second contact set, a U-shaped shielding structure, and a first plate member. The insulator includes a tongue and a base connected to the tongue. The first contact set and the second contact set are disposed inside the insulator and exposed out of a first side and a second side of the tongue opposite to each other. The U-shaped shielding structure is disposed on the base and at least partially exposed out of the base. The first plate member extends from an end portion of the U-shaped shielding structure along a third side adjacent to the first side and the second side of the tongue and toward a front end of the tongue. The first plate member includes a first step structure. Therefore, it effectively prevents the tongue from being worn or deformed by insertion and withdrawal forces.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: September 10, 2019
    Assignee: VITECK CO., LTD.
    Inventor: Yu-Ching Chu
  • Patent number: 10403551
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first device region and a second device region, a first fin over the substrate in the first device region, a second fin over the substrate in the second device region, a first epitaxial feature over the first fin in the source/drain region of the first fin, a second epitaxial feature over the second fin in the source/drain region of the second fin, and a dielectric layer on the first and second epitaxial features. The first epitaxial feature is doped with a first dopant of a first conductivity and the second epitaxial feature is doped with a second dopant of a second conductivity different from the first conductivity. The dielectric layer is doped with the first dopant.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: September 3, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20190263083
    Abstract: A display device is disclosed, which includes: a support layer including a first surface, a second surface and a first side wall, wherein the first surface and the second surface locate at two opposite sides of the support layer, and the first side wall connects the first surface and the second surface; an adhesion layer disposed on the second surface of the support layer; a base layer disposed on the adhesion layer; and at least one transistor disposed on the base layer, wherein the adhesion layer adheres to a partial portion of the first side wall of the support layer.
    Type: Application
    Filed: May 9, 2019
    Publication date: August 29, 2019
    Inventors: Hsia-Ching CHU, Ming-Chien SUN, Yuan-Lin WU
  • Publication number: 20190265568
    Abstract: A display substrate is provided. The display substrate includes a first insulating layer disposed on a substrate, a second insulating layer disposed on the first insulating layer. In particular, the first insulating layer has a first opening and the second insulating layer has a second opening, wherein the first opening and the second opening are partially overlapped. Further, in a cross-sectional view, the first insulating layer corresponding to the first opening has two first bottom ends, and the second insulating layer corresponding to the second opening has two second bottom ends, a location of a first vertical central line between the two first bottom ends is different from a location of a second vertical central line between the two second bottom ends, and the first vertical central line and the second vertical central line are substantially parallel to a normal direction of the surface.
    Type: Application
    Filed: May 2, 2019
    Publication date: August 29, 2019
    Inventors: Hung-Kun CHEN, Yi-Chin LEE, Hong-Kang CHANG, Yu-Chien KAO, Jui-Ching CHU, Li-Wei SUNG, Hui-Min HUANG
  • Publication number: 20190259781
    Abstract: A display device is disclosed, which includes: a substrate; a first metal conductive layer disposed on the substrate; a semiconductor layer disposed on the first metal conductive layer; and a second metal conductive layer disposed on the semiconductor layer and including a data line, a first part and a second part separated from the first part, the data line with a data extending direction connected to the second part. A first extending direction is a direction that the first part extends toward the second part, a first region is a region that the first part overlaps the first metal conductive layer, the first part has a first maximum breadth outside the first region along the data extending direction and a second maximum breadth inside the first region along a direction substantially perpendicular to the first extending direction, and the first maximum breadth is greater than the second maximum breadth.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 22, 2019
    Inventors: An-Chang WANG, Bo-Chin TSUEI, Hsia-Ching CHU, Ming-Chien SUN
  • Publication number: 20190252476
    Abstract: The disclosure provides a display device, including a substrate, a pixel define layer, a conductive line and a spacer. The pixel define layer is disposed on the substrate, wherein the pixel define layer includes a first opening region and a second opening region, wherein the second opening region is adjacent to the first opening region. The conductive line is disposed on the substrate, wherein in a top view of the display device, the conductive line is located between the first opening region and the second opening region. The spacer is disposed on the substrate, wherein the spacer at least partially overlaps the conductive line.
    Type: Application
    Filed: April 28, 2019
    Publication date: August 15, 2019
    Inventors: Hsia-Ching Chu, Pai-Chiao Cheng
  • Patent number: 10380972
    Abstract: A display device is disclosed, which comprises: a substrate; a semiconductor layer disposed on the substrate; a second electrode layer disposed over the semiconductor layer and comprising first data lines extending along a second direction; and plural pixel regions disposed between two adjacent first data lines. Herein, one pixel region has a first section and a second section substantially parallel to the second direction, respectively. The first section overlaps with the semiconductor layer, but the second section does not overlap therewith. When light passes through the display device, a ratio of a first brightness integral value obtained by measuring the first section to a second brightness integral value obtained by measuring the second section is greater than 0.4 and smaller than 1.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: August 13, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Bo-Chin Tsuei, Hsia-Ching Chu, Ming-Chien Sun
  • Publication number: 20190237491
    Abstract: The disclosed display device includes: a substrate; a gate electrode disposed on the substrate, wherein a first projection is defined by projecting the gate electrode on the substrate; and a connecting member disposed on the gate electrode and electrically connecting to the gate electrode, wherein a second projection is defined by projecting the connecting member on the substrate, an overlapping region is defined as a region of the second projection overlapping the first projection, and an area of the first projection is greater than an area of the overlapping region.
    Type: Application
    Filed: April 9, 2019
    Publication date: August 1, 2019
    Inventors: Yun-Sheng CHEN, Hsia-Ching CHU, Ming-Chien SUN
  • Patent number: 10365525
    Abstract: A display device is disclosed, which includes: a first substrate; a plurality of scan lines and a plurality of data lines, wherein the scan lines intersects with the data lines, the scan and the data lines are disposed above the first substrate, and the scan lines extend along a first direction; a common electrode disposed above the first substrate; a second substrate; a display medium layer disposed between the first substrate and the second substrate, wherein the common electrode has a first part extending along the first direction, a second part corresponding to the data lines, and an end part, wherein the first part connects to the second part, the end part connects to the second part, a first angle included between the end part and the second part greater than 0 degree and less than 180 degrees. The end part overlaps partially with the data line adjacent thereto.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: July 30, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Chien-Hung Chen, Bo-Chin Tsuei, Hsia-Ching Chu, Mei-Chun Shih