Abstract: A display apparatus includes a first base plate, a second base plate and a liquid crystal layer. A first scan line and a second scan line are disposed above the first base plate and extend along a first direction. A first data line and a second data line are disposed above the first base plate, wherein the first scan line, the second scan line, the first data line and the second data line define a first region. A first thin-film transistor is electrically connected to the first scan line. A first common electrode is disposed above the first base plate and disposed in the first region, wherein the first common electrode comprises a first part, the first part is adjacent to the first scan line and extends along the first direction, and the first part overlaps the first thin-film transistor.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin structure, and a second fin structure. The method includes forming a gate structure over the first fin structure and the second fin structure. The method includes forming a first source structure and a first drain structure on the first fin structure and on two opposite sides of the gate structure. The first source structure and the first drain structure are made of an N-type conductivity material. The method includes forming a cap layer over the first source structure and the first drain structure. The cap layer is doped with a Group IIIA element, and the cap layer adjacent to a top surface of the first source structure is thicker than the cap layer adjacent to a bottom surface of the first source structure.

Abstract: A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin adjacent to the gate structure; and forming a source/drain region in the recess, the source/drain region including a first layer, a second layer, and a third layer, where forming the source/drain region includes performing a first epitaxy process under first process conditions to form the first layer in the recess, the first layer extending along surfaces of the fin exposed by the recess; performing a second epitaxy process under second process conditions to form the second layer over the first layer; and performing a third epitaxy process under third process conditions to form the third layer over the second layer, the third layer filling the recess, where the first processing conditions, the second process conditions and the third process conditions are different.

Abstract: Various examples of an integrated circuit device and a method for forming the device are disclosed herein. In an example, a method includes receiving a workpiece that includes a substrate, and a device fin extending above the substrate. The device fin includes a channel region. A portion of the device fin adjacent the channel region is etched, and the etching creates a source/drain recess and forms a dielectric barrier within the source/drain recess. The workpiece is cleaned such that a bottommost portion of the dielectric barrier remains within a bottommost portion of the source/drain recess. A source/drain feature is formed within the source/drain recess such that the bottommost portion of the dielectric barrier is disposed between the source/drain feature and a remainder of the device fin.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first device region and a second device region, a first fin over the substrate in the first device region, a second fin over the substrate in the second device region, a first epitaxial feature over the first fin in the source/drain region of the first fin, a second epitaxial feature over the second fin in the source/drain region of the second fin, and a dielectric layer on the first and second epitaxial features. The first epitaxial feature is doped with a first dopant of a first conductivity and the second epitaxial feature is doped with a second dopant of a second conductivity different from the first conductivity. The dielectric layer is doped with the first dopant.

Abstract: A display device includes: a substrate; a data line disposed on the substrate; an another data line disposed on the substrate and adjacent to the data line; a first light emitting diode including a first electrode; and a second light emitting diode including an another first electrode, wherein the first electrode partially overlaps the data line and the another first electrode partially overlaps the another data line.

Abstract: A display device is disclosed, which includes: a substrate; a scan line disposed on the substrate; a drain electrode, disposed on the substrate and including an arc edge; a first transparent conductive layer disposed on the substrate; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer, wherein the arc edge is located outside the scan line, and the arc edge is not overlapped with the second transparent conductive layer.

Abstract: Disclosed is a topical composition comprising an antimicrobial lipid found in the sebum or stratum corneum of human beings, other than saturated C8 to 18 fatty acids, wherein said composition further comprises a biphenol obtainable from Magnolia spp.

Abstract: A display device includes: a substrate; a scan line disposed on the substrate; a common electrode disposed on the substrate and including a through hole having a curved edge, wherein the through hole and at least a portion of the scan line are overlapped; a pixel electrode disposed on the substrate and including a slit; and an active layer disposed on the substrate, wherein the active layer and at least a portion of the slit are overlapped.

Abstract: A display device is disclosed, which includes: a substrate; a scan line having an extension direction, disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the gate electrode; source and drain electrodes disposed on the semiconductor layer; an insulating layer including a via hole and disposed on the drain electrode; a first transparent conductive layer disposed on the insulating layer, wherein a part of the first transparent conductive layer electrically connects to the drain electrode through the via hole; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer and not overlapping the via hole. Herein, the second transparent conductive layer has a first edge, the drain has a second edge, a minimum distance between the first edge and the second edge along a direction substantially perpendicular to the extension direction ranges from 0 ?m to 4 ?m.

Abstract: The disclosure provides a display device, including a substrate, a plurality of power lines and a pixel define layer. The plurality of power lines disposed on the substrate. The pixel define layer is disposed on the substrate, wherein the pixel define layer includes a first opening region and a second opening region. In a top view, the first opening region is adjacent to the second opening region, the first opening region overlaps a first power line of the plurality of power lines to define a first overlapping area, the second opening region overlaps a second power line of the plurality of power lines to define a second overlapping area, and the first overlapping area is different from the second overlapping area.

Abstract: A display device is disclosed, which includes: a first substrate; a first data line disposed on the first substrate; a first electrode disposed on the first substrate; and a first pixel defining layer disposed on the first electrode, wherein the first pixel defining layer exposes a part of the first electrode to define a first light emitting region, wherein, in a normal direction view of the first substrate, the first light emitting region partially overlaps the first data line.

Abstract: A display panel and a display device including the same are disclosed. The display panel includes: a substrate; plural scan lines disposed on the substrate, wherein the plural scan lines extend along a first direction; and a common electrode disposed on the substrate, wherein the common electrode includes a through hole having a curved edge, wherein the through hole overlaps at least a portion of one of the plural scan lines along a direction perpendicular to a surface of the substrate.

Abstract: A display panel is disclosed. The display panel includes a first substrate, a light shielding layer and a color block. The first substrate has a first surface with a first edge and a second edge, and the second edge is connected to the first edge. The second edge substantially extends along a first direction. The light shielding layer is disposed on the first surface and includes a plurality of openings. The color block closest to the second edge is disposed on the light shielding layer and extending along the first direction. The color block does not overlap the plurality of openings. Wherein the color block has a third edge which is closest to the second edge, and the third edge is not aligned evenly.

Abstract: Various examples of an integrated circuit device and a method for forming the device are disclosed herein. In an example, a method includes receiving a workpiece that includes a substrate, and a device fin extending above the substrate. The device fin includes a channel region. A portion of the device fin adjacent the channel region is etched, and the etching creates a source/drain recess and forms a dielectric barrier within the source/drain recess. The workpiece is cleaned such that a bottommost portion of the dielectric barrier remains within a bottommost portion of the source/drain recess. A source/drain feature is formed within the source/drain recess such that the bottommost portion of the dielectric barrier is disposed between the source/drain feature and a remainder of the device fin.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first device region and a second device region, a first fin over the substrate in the first device region, a second fin over the substrate in the second device region, a first epitaxial feature over the first fin in the source/drain region of the first fin, a second epitaxial feature over the second fin in the source/drain region of the second fin, and a dielectric layer on the first and second epitaxial features. The first epitaxial feature is doped with a first dopant of a first conductivity and the second epitaxial feature is doped with a second dopant of a second conductivity different from the first conductivity. The dielectric layer is doped with the first dopant.

Abstract: A display device including a substrate, first and second reference voltage lines, a first insulation layer is provided. The first and second reference voltage lines are disposed in a peripheral area of the substrate. The first insulation layer having a groove is disposed on the first reference voltage line. The groove extends along a first direction and exposes a contact portion of the first reference voltage line. The first insulation layer covers a first covered portion of the first reference voltage line. The second reference voltage line contacts the contact portion at the groove and has a contact surface. In a second direction, a first width W1 of the contact surface, a second width W2 of the first reference voltage line and a third width W3 of the first covered portion are complied with 1 ?m?W1?(W2?W3), wherein than 0 and smaller than W2.

Abstract: The disclosure provides a display device, including a substrate, a pixel define layer, a conductive line and a spacer. The pixel define layer is disposed on the substrate, wherein the pixel define layer includes a first opening region and a second opening region, wherein the second opening region is adjacent to the first opening region. The conductive line is disposed on the substrate, wherein in a top view of the display device, the conductive line is located between the first opening region and the second opening region. The spacer is disposed on the substrate, wherein the spacer at least partially overlaps the conductive line.

Abstract: Methods and apparatuses are disclosed to help the elderly or physically impaired individual standing up from a chair, a bench, a wheel chair, a toilet seat, a commode, a rollator seat, a walker seat, or a car seat. The disclosed apparatus to generate lifting thrust for individual to stand up from a chair has a base, a slidable seat pivoted mounted on the base and a lifting spring to reserve the energy on sitting down and release the saved energy on standing up.

Abstract: The invention discloses a lifting seat, which has an upper cushion assembly, a lower cushion assembly, an elastic member and an adjustment structure. One end of the upper cushion assembly is rotatably connected with one end of the lower cushion assembly, and the elastic member is arranged between the upper cushion assembly and the lower cushion assembly; wherein, the upper cushion assembly and the lower cushion assembly rotate relatively to have an open state and a closed state. The elastic member is in compression state when it is closed, and the adjustment structure is used to change the torque of the upper cushion assembly to the elastic member when it is open and closed. The technical solution provided by the invention can solve the problem that the existing lifting seat cannot fully satisfy the user's sit-to-stand requirements.