Abstract: A fastening net for use on a luggage rack of a car has a rope, several fixing elements, hooking elements and a central fixing element. The rope is firstly arranged to have a first “8”, the first “8” being formed diagonally across a predetermined square defining the dimension of the net. Then, a second, a third and a fourth “8”s are formed in a similar way, constituting the major part of the net. The rest of the rope is arranged across the intermediate portions of the “8”s, approaching the center of the net. The fixing elements are each coupled to a respective one of the intersections of all parts of the rope. The hooking elements are fixed to the part of the rope constituting the edge of the net. The central fixing element is connected to the middle portions of all the “8”s for locating the sections of the rope from the center.

Abstract: A docking station for a notebook computer includes a housing and an ejector device. The housing has a front wall disposed adjacent to and parallel to a rear wall of the notebook computer. The front wall is formed with an ejector opening and an access opening. The ejector device includes an elongate linking arm, an ejecting member, and a biasing member. The linking arm, which is disposed in the housing and parallel to the front wall, is movable in the housing in a longitudinal direction between operated and non-operated positions. The linking arm has a connecting end and an operating end accessible via the access opening to permit movement of the linking arm from the non-operated position to the operated position.

Abstract: A method for forming an opening in a semiconductor device is provided. A silicon-oxy-nitride layer is formed on a dielectric layer and then a photoresist layer with a first opening is formed on the silicon-oxy-nitride layer. A polymer film is formed on sidewalls of the first opening. A second opening narrower than the first opening is formed in the dielectric layer with the photoresist layer and the polymer film.

Abstract: A compressor includes a housing having an upward extending tube coupled to a pressure gage. A piston is slidably received in the housing and has an annular groove for loosely receiving a sealing ring and has one or more notches communicating with the annular groove of the piston. A gear is driven by a motor and coupled to the piston with an eccentric pin for moving the piston along the housing in a reciprocating action. The gear has one half of greater teeth than that of the other half for increasing the driving effect of the compressor.

Abstract: A packaging box includes at least two opposite side walls and a foldable handle member. The side walls have upper edges, and inner and outer cover plates connected hingeably and respectively to the upper edges. The outer cover plate overlies the inner cover plate, and has a slot formed therein. The foldable handle member is connected to the inner cover plate. The foldable handle member projects from a plane parallel to the inner cover plate when the foldable handle member is folded to an upright position. The foldable handle member is located in the plane parallel to the inner cover plate when the foldable handle member is unfolded. The foldable handle member projects through the slot in the outer cover plate when the foldable handle member is folded to the upright position.

Abstract: A process for forming a shallow source/drain region, for a sub-micron MOSFET device, has been developed. The process features a process sequence comprised of a series of ion implantation procedures, followed by a low temperature, rapid thermal anneal procedure. Each ion implantation procedure, uses a specific energy and a specific dose, resulting in a series of ion implant regions, each located at a specific depth in the semiconductor substrate. A rapid thermal anneal is used to activate the implanted ions, forming the shallow source/drain region. The creation of several ion implant regions, reduced the risk of crystal damage which can result with the use of a single, more concentrated, ion implant region. The risk of crystal damage is also reduced via the use of a rapid thermal anneal procedure, which can be employed at lower temperatures than counterpart anneal procedures, that are used to distribute ions from a single, ion implanted region.

Abstract: A method for fabricating a metal-oxide semiconductor (MOS) transistor. A substrate having a gate structure is provided. The method of the invention includes forming a liner spacer on each side of the gate structure and a low dopant density region deep inside the substrate. The low dopant density region has a lower dopant density than that of a lightly doped region of the MOS transistor. Then a interchangeable source/drain region with a lightly doped drain (LDD) structure and an anti-punch-through region is formed on each side of the gate structure in the low dopant density region. The depth of the interchangeable source/drain region is not necessary to be shallow.

Abstract: Disclosed are methods and compositions for copying a target nucleic acid using a self-priming primer. Single and different target nucleic acids can be copied using the disclosed methods and compositions.

Abstract: This invention provides a process for preparing the hypocholesterolemic compound comprising: (a) reacting p-fluorobenzoylbutyric acid with pivaloyl chloride and acylating the product with a chiral auxiliary to obtain a ketone of formula IV: (b) reducing the ketone of formula IV in the presence of a chiral catalyst to an alcohol: (c) reacting the chiral alcohol of step (b), an imine and a silyl protecting agent, then condensing the protected compounds to obtain a &bgr;-(substituted-amino)amide of formula VII: (d) cyclizing the &bgr;-(substituted-amino)amide of formula VII with a silylating agent and a fluoride ion catalyst to obtain a protected lactam of the formula VIII: and removing the protecting groups. The intermediates of formulas VII and VIII are also claimed.

Abstract: A device for the integrated micromanipulation, amplification, and analysis of polyelectrolytes such as DNA comprises a microchip which contains electrodes for dielectrophoresis powered by an AC signal generator, and a trapping electrode attached to a direct current source that can be heated to specific temperatures. Nucleic acids can be heated and cooled to allow for denaturation, the annealing of complementary primers and enzymatic reactions, as in a thermocycling reaction. After such a reaction has been completed on the trapping electrode, the dielectrophoretic field can be switched to a direct current to release the product and direct it through a matrix for fractionation and/or analysis. The device includes data analysis equipment for the control of these operations, and imaging equipment for the analysis of the products. The invention permits the efficient handling of minute samples in large numbers, since reactions occur while sample material is positioned on an electrode in a microfluidic channel.

Abstract: Glass microspheres and rear projection screens containing glass microspheres, which combine a desirable index of refraction (preferably, no greater than about 1.70) and low levels of defects (e.g., bubbles, visible haziness, frostiness, or opacity, substantially nonspherical shapes) upon formation are provided. Also provided is a coating method of placing microspheres on a film for use in a rear projection screen.

Abstract: A system and method are set forth for photoacoustical analysis of isotope and other compounds having telltale absorption wavelengths between 1700-2500 nm. The system and method includes a Co:Mg F2, an optical parametric oscillator (OPO), or a diode laser tunable between 1700-2500 nm which is directed into a sample at energies sufficient to generate detectable acoustical emissions. A microphone detects the emissions for processing and analysis. The system and method is adapted to detect stable isotope compounds such as 13CO2 as well as other chemical compounds. For non-gaseous compounds, a CO2 or diode laser is used to photoablate the gaseous sample containing the suspected compound.

Abstract: A high-voltage switch circuit is disclosed, which includes at least one voltage source input terminal for providing at least one voltage source (HV1), and a passing circuit (T0) for controllably passing the voltage source. The present invention also includes a pumping circuit (202) for raising voltage level of one output terminal (C) thereof. At least one switch circuit (T6 or T7) under control of a switch signal is used so that the voltage source controllably propagates to one output terminal (OUT1, OUT2) of the switch circuit through the passing circuit. Finally, a circuit (T4) is used for forcing the output terminal of the pumping circuit and one internal node (A) of the pumping circuit to an equal potential, so that the voltage source propagates to the output terminal of the switch circuit through the forcing circuit when the output terminal of the switch circuit is coupled to a ground.

Abstract: A magnetic recording medium, and methods of making and reading the same, including on at least a portion of a substrate an irreversible recording layer which contains an irreversible recording material undergoing an irreversible change of saturation magnetization upon heating. The invention involves the steps of previously heating the irreversible recording layer to form an initial heated region in which a plurality of heated bars whose saturation magnetization has been irreversibly changed are arrayed in a bar code pattern, and converting unheated bars disposed between the heated bars into a heated state for changing the array pattern of heated bars, thereby recording the information.

Abstract: An office chair armrest device includes two armrests and two L-shaped armrest supporters. Each armrest has a second connect member with a lateral pivot hole formed in a rear end, and each armrest supporter has a first connect member with a lateral pivot hole formed in an upper end of a vertical portion. A pivot extends in the lateral pivot holes of both the first and the second connect members to pivotally connect the armrest with the armrest supporter fixed with a side of a seat and a vertical side of a backrest. The armrest can be easily swung to a horizontal condition for the arm of a user to rest thereon or to a vertical condition if the armrest is not used.

Abstract: The present invention provides convergent processes for preparing epothilone A and B, desoxyepothilones A and B, and analogues thereof, useful in the treatment of cancer and cancer which has developed a multidrug-resistant phenotype. Also provided are intermediates useful for preparing said epothilones.

Abstract: A method for preventing boron segregation and out diffusion to form PMOS devices is disclosed. The method includes a semiconductor substrate which is provided and forms a gate oxide layer as well as a gate layer on top of the semiconductor substrate. Next, a photoresist layer is formed on a top surface of the gate layer, moreover, pattern transfers onto the photoresist layer after going through an exposure and a development. Furthermore, the gate layer and the gate oxide layer are then etched by using the photoresist layer as a mask, and the photoresist layer is removed afterward. In succession, a thin nitride oxide (NO, N2O) layer is grown by utilizing rapid thermal oxidation (RTO) and rapid thermal nitridation (RTN). Hereafter, high doped drain regions of boron ion shallow junctions are formed by carrying out ion implantation. A TEOS layer and a silicon nitride layer are deposited by using LPCVD, and forming spacers by etching the silicon nitride layer and the TEOS layer.

Abstract: A method for forming a gate that improves the quality of the gate includes sequentially forming a gate oxide layer, a polysilicon layer, a conductive layer and a masking layer on a substrate. Thereafter, the masking layer, the conductive layer, the polysilicon layer and the gate oxide layer are patterned to form the gate. Then, a passivation layer, for increasing the thermal stability and the chemical stability of the gate, is formed on the sidewall of the conductive layer by ion implantation with nitrogen cations. The nitrogen cations are doped into the substrate, under the gate oxide layer, by ion implantation, which can improve the penetration of the phosphorus ions.

Abstract: The present invention provides an active pixel sensor read-out channel that includes an active pixel. The active pixel drives an active pixel output to a signal voltage having an amplitude proportional to an intensity of light received by the active pixel. The active pixel drives the active pixel output to a reference voltage when the active pixel is not exposed to light. The active pixel output is connected to a sample and hold circuit. The sample and hold circuit samples and stores the signal voltage and samples and stores the reference voltage. A buffer amplifier generates a difference voltage between the sampled and stored signal voltage and the sampled and stored reference voltage.

Abstract: The invention provides a mechanism and process for changing a color of an image. In this process, a source frame that includes the image is received. An alpha matte that covers an object in the source frame is created. An original color of a pixel in the source frame is changed when the pixel is covered by the alpha matte, and when a color distance between the original color of the pixel and a target color is below a predetermined threshold.