Abstract: A button switch connected to a cap and includes a base having a pillar, a flexible acoustic member having fixing and flexible rods, a sleeve, an upward-force-applying member abutting against the sleeve and the base, a resilient arm, and a cover disposed on the base. The sleeve rotatably jackets the pillar, passes through the cover to be connected to the cap, and has first and second convex portions, first and second concave portions, and a protruding edge located between the second convex portion and the second concave portion. The resilient arm selectively abuts against a first or second position on the first convex portion. When the resilient arm abuts against the first position and the protruding edge is located above the flexible rod, the flexible rod crosses the protruding edge and then collides with the cover to make a sound when the sleeve receives an external force to move downward.

Abstract: Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac)2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.

Abstract: A keyswitch with adjustable tactile feedback is adjusted by an adjusting method. The keyswitch includes a baseplate, an upper housing, an upper bushing component, a lower bushing component, a keycap and a recovering component. The baseplate has an electrode module, the upper housing is disposed on the baseplate, the upper bushing component is movably disposed on the upper housing, the lower bushing component is movably located between the baseplate and the upper housing, and the keycap is connected to a connecting portion of the upper bushing component. The lower bushing component can rotate relative to the baseplate to switch between a first position and a second position. The lower bushing component has a first lateral surface and a second lateral surface with different shapes. The recovering component is disposed between the baseplate and the lower bushing component to upwardly push the lower bushing component.

Abstract: A keyswitch with adjustable tactile feedback is adjusted by an adjusting method. The keyswitch includes a baseplate, an upper housing, an upper bushing component, a lower bushing component, a keycap and a recovering component. The baseplate has an electrode module, the upper housing is disposed on the baseplate, the upper bushing component is movably disposed on the upper housing, the lower bushing component is movably located between the baseplate and the upper housing, and the keycap is connected to a connecting portion of the upper bushing component. The lower bushing component can rotate relative to the baseplate to switch between a first position and a second position. The lower bushing component has a first lateral surface and a second lateral surface with different shapes. The recovering component is disposed between the baseplate and the lower bushing component to upwardly push the lower bushing component.

Abstract: A data recovery circuit includes: a first comparison circuit for comparing two analog data signals to output a first and a second comparison signals having opposite logic values when a positive clock signal stays at an active level, and for configuring the first and second comparison signals to have a same logic value when the positive clock signal stays at an inactive level; a second comparison circuit for comparing the two analog data signals to output a third and a fourth comparison signals having opposite logic values when a negative clock signal stays at the active level, and for configuring the third and fourth comparison signals to have the same logic value when the negative clock signal stays at the inactive level; and a data signal generating circuit for generating a digital data signal according to the first through fourth comparison signals.

Abstract: A straight-through structure of heat dissipation unit includes a first plate body and a second plate body correspondingly mated with each other to define a closed chamber. A hydrophilic layer is disposed on the surface of the closed chamber and a capillary structure is disposed in the closed chamber. The first plate body is formed with a first recess, a first perforation and a second recess. The first recess is connected with the capillary structure disposed on the third face of the second plate body. One end of the second recess abuts against the capillary structure. The capillary structure layer is not in contact with the first recess. The second plate body has a second perforation in alignment with the first perforation. When it is necessary to perforate the heat dissipation unit, the straight-through structure can keep the closed chamber in the vacuumed and airtight state.

Abstract: A non-volatile memory device and its manufacturing method are provided. The non-volatile memory device includes a tunneling oxide layer, a floating gate, a dielectric layer, and a control gate. The tunneling oxide layer is formed on a substrate. The floating gate is formed on the tunneling oxide layer, and includes a first polysilicon layer, a second polysilicon layer, and a nitrogen dopant. A grain of the first polysilicon layer has a first grain size, and a grain of the second polysilicon layer has a second grain size that is greater than the first grain size. The nitrogen dopant is formed in interstices between the grains of the first polysilicon layer. The dielectric layer includes a first nitride film, an oxide layer, a nitride layer, and an oxide layer conformally formed on the floating gate. The control gate is formed on the dielectric layer.

Abstract: A communication apparatus includes an input terminal, an output terminal, and an interference reduction circuit. The interference reduction circuit is coupled between the input terminal and the output terminal. The interference reduction circuit receives a time-varying data signal. The interference reduction circuit acquires first partial data from the data signal at a first time, and generates a first level-shifted result and a second level-shifted result according to the first partial data. The interference reduction circuit is further configured to acquire second partial data from the data signal at a second time. The interference reduction circuit selects one of the first level-shifted result and the second level-shifted result as a selected result according to the second partial data, and sends the selected result to the output terminal.

Abstract: An active device array substrate including a first scan line, a first data line, a second data line, a first active device, a first pixel electrode, a second active device, a second pixel electrode, and a first shielding pattern layer is provided. The first active device includes a first gate electrically connected to the first scan line, a first semiconductor pattern layer, a first source electrically connected to the first data line, and a first drain. The second active device includes a second gate electrically connected to the first scan line, a second semiconductor pattern layer, a second source electrically connected to the second data line, and a second drain. The first shielding pattern layer is overlapped with the first semiconductor pattern layer and the second semiconductor pattern layer. The first shielding pattern layer is overlapped with the second data line and not overlapped with the first data line.

Abstract: A floor faucet structure contains: a body, an adjustable fitting sleeve, a fixing seat, and a connection sleeve. The body includes a positioning disc having multiple orifices. The body further includes a cold-water inlet tube and a hot-water inlet, the two rotation members connect with two connectors individually, and the two connectors are perpendicular to the cold-water inlet tube and the hot-water inlet tube separately. The adjustable fitting sleeve includes a first coupling portion, the fixing seat includes a circular groove having multiple through holes, and the fixing seat includes multiple retaining ribs. The connection sleeve includes a second coupling portion configured to connect with the first coupling portion of the body, and the connection sleeve also includes a cylindrical fence on which two opposite cutouts are formed. The connection sleeve further includes multiple locking ribs configured to retain with the multiple retaining ribs of the fixing seat respectively.

Abstract: A data recovery circuit includes: a first comparison circuit for comparing two analog data signals to output a first and a second comparison signals having opposite logic values when a positive clock signal stays at an active level, and for configuring the first and second comparison signals to have a same logic value when the positive clock signal stays at an inactive level; a second comparison circuit for comparing the two analog data signals to output a third and a fourth comparison signals having opposite logic values when a negative clock signal stays at the active level, and for configuring the third and fourth comparison signals to have the same logic value when the negative clock signal stays at the inactive level; and a data signal generating circuit for generating a digital data signal according to the first through fourth comparison signals.

Abstract: Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac)2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Abstract: An active device array substrate including a first scan line, a first data line, a second data line, a first active device, a first pixel electrode, a second active device, a second pixel electrode, and a first shielding pattern layer is provided. The first active device includes a first gate electrically connected to the first scan line, a first semiconductor pattern layer, a first source electrically connected to the first data line, and a first drain. The second active device includes a second gate electrically connected to the first scan line, a second semiconductor pattern layer, a second source electrically connected to the second data line, and a second drain. The first shielding pattern layer is overlapped with the first semiconductor pattern layer and the second semiconductor pattern layer. The first shielding pattern layer is overlapped with the second data line and not overlapped with the first data line.

Abstract: Disclosed herein is a mobile plastic recycling system mounted in a vehicle. The system is configured to process a plastic article and make it into thermoplastic items. The mobile plastic recycling system includes a plastic recycling apparatus and a power supply apparatus that are electrically coupled with each other; the system also includes a vehicle configured to carry and transport the power supply apparatus and plastic recycling apparatus.

Abstract: Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.

Abstract: A pixel array substrate including a plurality of pixel units disposed on a substrate is provided. Each of the pixel units includes a scan line, a data line and an active element. The active element includes a semiconductor layer, a gate, a source electrode and a drain electrode. The semiconductor layer has a channel region, a source region, a drain region, a first connection region and a second connection region. The first connection region is connected between the channel region and the source region. The second connection region is connected between the channel region and the drain region. A normal projection of the first connection region on the substrate and a normal projection of the second connection region on the substrate are respectively located at two opposite sides of a normal projection of the data line on the substrate.

Abstract: A heat pipe structure includes a main body. The main body has a first board body, a second board body, a capillary structure and a working fluid. The first and second board bodies are overlapped and mated with each other to hold the capillary structure. The capillary structure is formed with at least one passage. One of the first and second board bodies is formed with a protrusion section protruding toward the capillary structure. The protrusion section is attached to the capillary structure in adjacency to the passage. Accordingly, the heat pipe structure has an extremely thin thickness.

Abstract: An intake/outlet pipe optimization method for a rotary engine, comprising the steps of: (A) providing a rotary engine; (B) providing a simulation software package, to perform a series of simulations for the rotary engine according to different combinations of a pipe length, a pipe diameter, a pipe shape and a pipe angle, to determine an optimal combination of the pipe length, the pipe diameter, the pipe shape, and pipe angle, to obtain an optimal power output for the rotary engine; and (C) performing tests for the rotary engine, by utilizing the optimal combination of the pipe length, the pipe diameter, the pipe shape, and pipe angle obtained in step (B), to obtain a test optimized power output for the rotary engine.

Abstract: The invention relates to an optical composite material composition, comprising: 0.1 wt % to 15 wt % of a luminescent material; 5 wt % to 30 wt % of a surfactant having at least two thiol groups; 30 wt % to 50 wt % of a first acrylate monomer; 15 wt % to 30 wt % of a second acrylate monomer; 5 wt % to 20 wt % of a cross-linker; and 1 wt % to 2 wt % of an initiator. The invention also provides an optical composite material prepared by the optical composite material composition.