Abstract: A fan including a frame and an impeller is disclosed. The frame has an air inlet and an air outlet. The impeller is disposed in the frame and includes a hub and multiple blades. Each blade has a negative pressure surface facing the air inlet, a positive pressure surface facing the air outlet, a blade root, and a blade tip opposite to the blade root. In a first region extending from the blade root to the blade tip by a first length, the negative pressure surface and the positive pressure surface are respectively a convex arc surface and a plane. In a second region extending from the blade tip to the blade root by a second length smaller than the first length, the negative pressure surface and the positive pressure surface are respectively a convex arc surface and a concave arc surface or both are convex arc surfaces.

Abstract: A virtual reality device is provided. The virtual reality device includes a main body portion, a plurality of first-type antennas, and a plurality of second-type antennas. The main body portion has a first side eyeglass frame, a second side eyeglass frame, and a connection part. The connection part is connected to the first side eyeglass frame and the second side eyeglass frame. The second-type antennas and the corresponding first-type antennas are respectively disposed on a first side of the first side eyeglass frame, on a second side of the second side eyeglass frame, and on the connection part. The first side of the first side eyeglass frame is opposite to the second side of the second side eyeglass frame.

Abstract: An antenna structure includes a first signal source, a second signal source, a first radiator, a second radiator, a third radiator, a first circuit, and a second circuit. The first signal source is used to generate a first wireless signal, and the second signal source is used to generate a second wireless signal. The first radiator is coupled to the first signal source to receive the first wireless signal, and the second radiator is coupled to the second signal source to receive the second wireless signal. The first circuit has a first end coupled to the third radiator and a second end coupled to the first radiator or the first signal source. The second circuit has a first end coupled to the third radiator and a second end coupled to the second radiator or the second signal source.

Abstract: Provided is a memory device and a method of forming the same. The method includes: providing a substrate having multiple active regions; forming a first layer stack on the substrate; patterning the first layer stack to form multiple recesses in the first layer stack; forming a liner layer on the first layer stack to cover the recesses; performing an etching process to remove a portion of the liner layer and the first layer stack below the recesses, so as to extend the recesses downward to form multiple openings, wherein the openings respectively expose the active regions; respectively forming multiple conductive structures in the openings; forming a second layer stack on the conductive structures; and patterning the second layer stack and the conductive structures to form multiple bit-line structures and bit-line contacts, respectively.

Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.

Abstract: A neural network is used to place macros on a chip canvas in an integrated circuit (IC) design. The macros are first clustered into multiple macro clusters. Then the neural network generates a probability distribution over locations on a grid and aspect ratios of a macro cluster. The grid represents the chip canvas and is formed by rows and columns of grid cells. The macro cluster is described by at least an area size, aspect ratios, and wire connections. Action masks are generated for respective ones of the aspect ratios to block out a subset of unoccupied grid cells based on design rules that optimize macro placement. Then, by applying the action masks on the probability distribution, a masked probability distribution is generated. Based on the masked probability distribution, a location on the grid is selected for placing the macro cluster with a chosen aspect ratio.

Abstract: A neural network based method places flexible blocks on a chip canvas in an integrated circuit (IC) design. The neural network receives an input describing geometric features of a flexible block to be placed on the chip canvas. The geometric features includes an area size and multiple aspect ratios. The neural network generates a probability distribution over locations on the chip canvas and the aspect ratios of the flexible block. Based on the probability distribution, a location on the chip canvas is selected for placing the flexible block with a chosen aspect ratio.

Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.

Abstract: Some implementations described herein provide a nanostructure transistor including inner spacers between a gate structure and a source/drain region. The inner spacers, formed in cavities at end regions of sacrificial nanosheets during fabrication of the nanostructure transistor, include concave-regions that face the source/drain region. Formation techniques include forming the sacrificial nanosheets and inner spacers to include certain geometric and/or dimensional properties, such that a likelihood of defects and/or voids within the inner spacers and/or the gate structure are reduced.

Abstract: A heat dissipation system suitable for a portable electronic device with two heat sources is provided. The heat dissipation system includes a fan, two heat dissipation fin sets, a gate, a first heat pipe, a second heat pipe, and a control unit. The fan is a centrifugal fan and has a main outlet and a sub outlet. The heat dissipation fin sets are disposed respectively at the main outlet and the sub outlet, and the gate is disposed at the sub outlet. The first heat pipe thermally contacts the heat sources and the heat dissipation fin set located at the main outlet. The second heat pipe thermally contacts one of the heat sources and the two heat dissipation fin sets. The control unit is electrically connected to the gate to drive the gate to open or close the sub outlet according to a load of the two heat sources.

Abstract: In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode, a gate dielectric layer is formed in the gate space, conductive layers are formed on the gate dielectric layer to fully fill the gate space, the gate dielectric layer and the conducive layers are recessed to form a recessed gate electrode, and a contact metal layer is formed on the recessed gate electrode. The recessed gate electrode does not include tungsten, and the contact metal layer includes tungsten.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in the top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes the oxidized portion of the seed layer. A second etch process removes portions of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: Provided is a centrifugal heat dissipation fan including a housing and an impeller. The impeller is disposed in the housing. The impeller has a hub and multiple blades disposed surrounding the hub. Every two adjacent blades have different blade structures relative to the housing such that the blade structures pass by a fixed position of the housing and generate blade tones of varying frequencies when the impeller rotates.

Abstract: A communication device includes a nonconductive track, an antenna element, a first turning wheel, and a second turning wheel. The antenna element is disposed on the nonconductive track. The first turning wheel and the second turning wheel drive the nonconductive track according to a control signal, so as to adjust the position of the antenna element. The communication device provides an almost omnidirectional radiation pattern.

Abstract: An antenna structure includes a first signal source, a second signal source, a first radiator, a second radiator, a third radiator, a first circuit, and a second circuit. The first signal source is used to generate a first wireless signal, and the second signal source is used to generate a second wireless signal. The first radiator is coupled to the first signal source to receive the first wireless signal, and the second radiator is coupled to the second signal source to receive the second wireless signal. The first circuit has a first end coupled to the third radiator and a second end coupled to the first radiator or the first signal source. The second circuit has a first end coupled to the third radiator and a second end coupled to the second radiator or the second signal source.

Abstract: A heat dissipation system of a portable electronic device is provided. The heat dissipation system includes a body and at least one fan. A heat source of the portable electronic device is disposed in the body. The fan is a centrifugal fan disposed in the body. The fan has at least one flow inlet, at least one flow outlet, and at least one spacing portion. The flow outlet faces toward the heat source, and the spacing portion surrounds the flow inlet and abuts against the body, so as to isolate the flow inlet and the heat source in two spaces independent of each other in the body.

Abstract: In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode, a gate dielectric layer is formed in the gate space, conductive layers are formed on the gate dielectric layer to fully fill the gate space, the gate dielectric layer and the conducive layers are recessed to form a recessed gate electrode, and a contact metal layer is formed on the recessed gate electrode. The recessed gate electrode does not includes tungsten, and the contact metal layer includes tungsten.

Abstract: A thermal module includes a fan and a fin assembly. The fan has an air outlet. The fin assembly has multiple fins, and is disposed to the air outlet of the fan. The fins are disposed side by side to form multiple flow channels. Each of the flow channels has a first inlet, at least one second inlet, and an outlet. In each of the flow channels, a gas flow generated by the fan flows into the flow channel from the first inlet and flows out of the flow channel from the outlet, and a gas flow outside the fin assembly is drawn by the gas flow in the flow channel to flow into the flow channel from the at least one second inlet.