Abstract: A structure of supporting frame for heater lamp in evaporator is disclosed. The supporting frame contains a lower supporting frame and an upper supporting female, respectively, by means of a non-circle section on the male portion and a complementary section on the female portion to conjoin together and to restrain them to rotate. Consequently, the proposed supporting frame provides directly locating during the female joint step of male portion and female portion. The time consuming steps for e-beam evaporator maintain are thus omitted.

Abstract: A method of removaling photoresistance is disclosed: first, unqualified pattern on the substrate is taken away by a plasma process under a mixture of oxygen and fluorocarbon gases. Thereafter, the polymer, which is produced by reaction between the plasma and photoresist, is removed by organic solvent (ACT690/NMP). When the plasma process is applied, the plasma process also could over-etch in the silicon-oxy-nitride layer and the polymer is entirely taken off in the plasma process. Silicon-oxy-nitride is then deposited to complement the loss part in the plasma process. After that, lithography process repeats again to form a new pattern. Finally, ADI is performed to make sure if the new pattern is in the acceptable range of the process. Next, metal layer and silicon-oxy-nitride layer are patterned by the new pattern to form the interconnect.

Abstract: The present invention discloses a carrier for cell attachment or fixation and its preparation. The carrier of the present invention is formed by the following steps: forming a fiber by extruding a melted polymer from a nozzle: extending the fiber and shaping the extended fiber on the shaping net to form a three-dimensional branch-like non-woven structure; activating the surface of the non-woven structure to have cell affinity and facilitate the attaching and growing of the cell. Moreover, the surface of the carrier is wrinkled or rough to improve the stiffness of the carrier and keep enough space between the carriers.

Abstract: A wafer load/unload apparatus used to load/unload the wafer into/from the clamp ring for performing the E-Gun evaporation process is disclosed. The apparatus comprises a base, a central cylinder and a plurality of peripheral cylinders. The base has an even upper surface, and the central cylinder and the plurality of the peripheral cylinders are connected to the upper surface of the base respectively, wherein the plurality of the peripheral cylinders are located around the central cylinders. A recessed trench penetrating through sidewalls of the central cylinder is formed on a top surface of the central cylinder. The central cylinder can penetrate through a clamp ring, wherein the clamp ring is used to load a wafer for performing the E-Gun evaporating process. The spacing distances between the plurality of peripheral cylinders and the central cylinder are bigger than the width of the clamp ring.

Abstract: A plate-tilting apparatus adapted to be used in a semiconductor-manufacturing process is disclosed. The plate-tilting apparatus is used for preventing thin wafers from being collected in a cassette contacted with each other after the thin wafers are taken out of a solution. It includes a plate having the container locked thereon and having a first edge pivotally connected to a basal plane of a tank used in the semiconductor-manufacturing process, and a plate-lifting device connected to a second edge of the plate opposite to the first edge for lifting the second edge of the plate, so that the plate can be tilted at a specific angle.

Abstract: Ion implantation equipment is modified so as to provide a support ring between the filament and the cathode where it can continue its function of insulating the filament, thereby greatly extending the lifetime and reducing downtime of the equipment. According to the present invention, apparatus for preventing the short circuit of a filament of a source head to a cathode, comprising: an arc chamber, having an opening; a cathode tube, through the opening of the arc chamber extending in the arc chamber, one end of the cathode tube having a hollow, the hollow facing outside of the arc chamber; an isolated support ring, locating in the hollow's sidewall of the cathode tube; and a filament, through the isolated support ring locating in the cathode tube.

Abstract: An inspection device for examining a piece of aperture graphite of an extraction electrode, and the aperture graphite includes a to-be-examined curve and a to-be-examined engagement portion. The inspection device includes a sidewall surface having a standard curve marked thereon, and an examination engagement portion having a predetermined positional relationship with the sidewall surface. After the to-be-examined engagement portion is engaged with the examination engagement portion, and after the to-be-examined curve is projected onto the sidewall surface, the suitability of the aperture graphite can be determined according to the amount of differences between the projected to-be-examined curve and the standard curve.

Abstract: A cell-cultivating device includes a plurality of culture tanks and a driving device. The culture tanks communicate with each other and have culture medium inside. The driving device forces the culture medium to flow between the culture tanks so as to vertically oscillate medium levels in the culture tanks.

Abstract: In a memory controller system, a method for granting a system memory by a memory request arbitrator to a request among a plurality of pending memory access requests is provided. The plurality of the memory access requests includes Rfrsh_Hreq, Crt_Hreq, Group AB, Crt_Lreq and Rfrsh_Lreq and are respectively asserted by a host control circuitry and/or a graphical control circuitry which are implemented and integrated on a single monolithic semiconductor chip. The host control circuitry and the graphical control circuitry shares the system memory and the memory request arbitrator includes a refresh queue and the graphics control circuitry includes a CRT FIFO. The method prioritizes the plurality of the memory access requests in order of Rfrsh_Hreq>Crt_Hreq>Group AB>Crt_Lreq>Rfrsh_Lreq.

Abstract: A structure for connecting fluid channel of fluid delivery system is disclosed. This connecting structure limits the length of the flow-guiding pipe extending into the delivery channel, to reduce particle contaminates and the probability of crack. The present pipe union connecting structure comprises a first pipe, a second pipe mounted to the first pipe, and an inner pipe extending from the first pipe into the second pipe with a certain extending length. The extending length of the inner pipe is less than the proportion of the minimum distance between the inner wall of the second pipe and the outlet of the inner pipe when standstill, to the tangent value of a certain angle &thgr;, which is the maximum inclined angle between the second pipe and the inner pipe.

Abstract: A series of phloroglucide derivatives are synthesized, which possess potent antibacterial activities. They include unsymmetrical phloroglucide analogs, phloroglucides attached to cephalosporins at the C-3′ position, and 7-(phloroglucidamido)cephalosporins.

Abstract: A simplified cleaning method for the removal of particulates and adherent residues resulting from the incorporation of laser identification marks onto silicon wafers is described. The cleaning method consists of first immersing the wafers in a heated ammoniacal/hydrogen peroxide RCA-SC-1 cleaning solution in the presence of megasonic agitation. This is followed by a immersion rinse in de-ionized water heated to at least 50° C. Finally the wafers are subjected to at least three quick-dump rinses in room temperature de-ionized water and dried. It is found that the hot de-ionized water rinse provides adequate removal of chemical residues remaining after the particle dislodging action of the megasonically agitated RCA SC-1 solution to eliminate the need for application of the acidic/hydrogen peroxide RCA SC-2 treatment.

Abstract: The present invention relates to a fabrication method for integrated passive component, comprising the steps of providing an insulator substrate and then planarizing the insulator substrate; forming integrated passive components on the insulator substrate; and packaging the integrated passive components by a thick film packaging method. The advantages of the method of the invention are that the fabricated components are miniaturized, the yield is high, and cost of production is low.

Abstract: A slurry nozzle for supplying slurry in chemical mechanical polishing (CMP) including at least one slurry line, a slurry nozzle enclosure for accommodating the slurry line, and a baffle ring mounted at one end of the slurry nozzle enclosure. A plurality of apertures is formed on the sidewall of the slurry line for the slurry to spray out. The slurry spraying out from the slurry line flows down along the inner sidewall of the slurry baffle ring after the slurry impinges onto the slurry baffle ring.

Abstract: A phloroglucide derivative having the following formula: ##STR1## wherein Q is halogen; X is CH.sub.2 or C.dbd.O; Y is cephalosporin having a formula of ##STR2## wherein Ph is phenyl, Ac is acetoxy, or pharmaceutically acceptable salts thereof, and an antibacterial pharmaceutical composition derived thereof.

Abstract: A height gauge device for wafer, which is mounted under a cooling water pipe of a back-grinding machine; the device comprises a height gauge box, a measuring rod, a L-shaped linking rod and a resilient member; a signal sensor is mounted inside the height gauge box for measuring the height of a wafer; both ends of the measuring rod are connected with the signal sensor and the L-shaped linking rod respectively; the L-shaped linking rod is mounted with a probing needle; the resilient member is mounted between the L-shaped linking and the cooling water pipe; in height gauging operation, the probing needle on the L-shaped linking needle should be raised first so as to put a wafer under the probing needle, and to have the probing needle pressed against the wafer by means of the resilient force of the resilient member; consequently, the resilient member is subject to elastic fatigue or break; the resilient member of the height gauge device can be replaced directly without opening the height box so as to save time an

Abstract: Crystalline lithiated transition metal oxide materials having a rhombohedral R-3m crystal structure includes divalent cations selected and added in amounts so that all or a portion of the divalent cations occupy sites in transition metal atom layers within the materials' crystal lattice. The lithiated transition metal oxides are useful as cathode materials in lithium-ion secondary cells. The materials include, but are not limited to, Li.sub.1+x Ni.sub.1-y M.sub.y N.sub.x O.sub.2(1+x) and Li.sub.1 Ni.sub.1-y M.sub.y N.sub.x O.sub.p, wherein M is a transition metal selected from titanium, vanadium, chromium, manganese, iron, cobalt, and aluminum, and N is a group II element selected from magnesium, calcium, strontium, barium, and zinc. The materials provide improved cyclability and high voltage capacity as cathodes in lithium-ion secondary cells. Processes for producing the divalent cation-containing lithium transition metal oxide materials of the invention are also disclosed.