Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a dielectric stack disposed on a substrate. The integrated chip structure further includes one or more piezoelectric ultrasonic transducers (PMUTs) and one or more capacitive ultrasonic transducers (CMUTs). The one or more PMUTs include a piezoelectric stack disposed within the dielectric stack over one or more PMUT cavities. The one or more CMUTs include electrodes disposed within the dielectric stack and separated by one or more CMUT cavities. An isolation chamber is arranged within the dielectric stack laterally between the one or more PMUTs and the one or more CMUTs. The isolation chamber vertically extends past at least a part of both the one or more PMUTs and the one or more CMUTs.

Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.

Abstract: An electronic device including a panel, a Chip on Film and a flexible circuit board is disclosed. The panel includes a first gate driver, a switch transistor and a driving transistor. An output terminal of the switch transistor is coupled to a control terminal of the driving transistor. The first gate driver is used for receiving an AC signal and a DC signal and outputting a control signal to a control terminal of the switch transistor. The Chip on Film is electrically connected to the panel and used for transmitting a data signal to an input terminal of the switch transistor and transmitting the AC signal to the first gate driver. The flexible circuit board is electrically connected to the panel and used for transmitting a power signal to an input terminal of the driving transistor and transmitting the DC signal to the first gate driver.

Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.

Abstract: An electronic device is provided in this disclosure. In some embodiments, the electronic device includes a first substrate and a second substrate adjacent to the first substrate. In some embodiments, the electronic device includes a plurality of organic light emitting diodes, a filter layer, and a third substrate. At least a part of the plurality of organic light emitting diodes are disposed on the first substrate. The filter layer is disposed at least on the second substrate. The third substrate is disposed corresponding to the first substrate and the second substrate. The plurality of organic light emitting diodes and the filter layer are disposed under the third substrate.

Abstract: Abstract of Disclosure An electronic device includes a diode, a driving circuit, a first signal line, a second signal line, a first electrostatic protection circuit and a second electrostatic protection circuit. The diode has a first end and a second end. The first signal line is coupled between the first end and the driving circuit. The second signal line is coupled between the second end and the driving circuit. The first electrostatic protection circuit is coupled to the first signal line. The second electrostatic protection circuit is coupled to the second signal line.

Abstract: An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of first grooves and a plurality of second grooves, the first grooves and the second grooves have different sizes, at least one first electronic component of the plurality of first electronic components is disposed in one of the plurality of first grooves, at least one second electronic component of the plurality of second electronic components is disposed in one of the plurality of second grooves, a maximum length passing through a center of a bottom surface of the at least one first electronic component is defined as L1, a bottom length of one side of at least one second groove among the second grooves is defined as L2, and the at least one first electronic component and the at least one second groove satisfy the condition of L1>L2.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: An image processing system and an image processing device are provided. The image processing system includes an electronic device and the image processing device. The image processing device is connected to the electronic device. The image processing device displays a floating three-dimensional input device image information. The image processing device interacts with an object through the three-dimensional input device image information to generate a plurality of control signals, and transmits the plurality of control signals to the electronic device.

Abstract: An electronic device includes a conductive structure, a first insulation layer and a second insulation layer. The first insulation layer is disposed on the conductive structure. The second insulation layer is disposed on the first insulation layer. The first insulation layer includes a first hole, and the first hole overlaps a part of the conductive structure. The second insulation layer includes a second hole, and the first hole and the second hole at least partially overlap. A width of the second hole is less than a width of the first hole.

Abstract: An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second pulse introduces a second precursor material, which is turned into a plasma and then directed towards the semiconductor fin and gate stack in an anisotropic deposition process. As such, a thickness of the etch stop layer along a bottom surface is larger than a thickness of the etch stop layer along sidewalls.

Abstract: A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

Abstract: The disclosure provides an electronic device including a substrate, an electronic element, a driving element, a first trace, a second trace, a conductive pattern, and an electrostatic discharge protection element. The substrate includes a first surface, a second surface, and a third surface. The third surface connects to the first surface and the second surface. The electronic element is disposed on the first surface. The driving element is disposed on the second surface. The first traces are disposed on the first surface. The second traces are disposed on the second surface and are electrically connected to the driving element, and the corresponding first traces are electrically connected to the corresponding second traces. The conductive pattern is electrically connected to the driving element and receives a grounding voltage or is floating. The electrostatic discharge protection element is disposed on the first surface and is electrically connected to the driving element.

Abstract: An electronic device is provided in this disclosure. In some embodiments, the electronic device includes two display panels, a first filling element, and a second filling element. The two display panels adjoin each other. The first filling element and the second filling element are disposed between the two display panels, and a material of the first filling element is different from a material of the second filling element. In some embodiments, the electronic device includes a protection substrate, two light emitting plates, and a filling element. The two light emitting plates adjoin each other. The protection substrate is disposed corresponding to the two light emitting plates, and the two light emitting plates emit light towards the protection substrate. The filling element is disposed between the two light emitting plates.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer on a substrate, forming a first trench and a second trench in the first IMD layer, forming a bottom electrode in the first trench and the second trench, forming a ferroelectric (FE) layer on the bottom electrode, and then forming a top electrode on the FE layer to form a ferroelectric random access memory (FeRAM).

Abstract: An electronic device with an active region comprising a substrate; a first conducting layer, disposed on the substrate, comprising a first pad in the active region; a second conducting layer, disposed on the first conducting layer, comprising a second pad in the active region; a first electronic component, disposed on the first pad, and electronically connected to the first pad; and a second electronic component, disposed on the second pad, and electronically connected to the second pad.

Abstract: A semiconductor device for internet of things (IoT) device includes a substrate having an array region defined thereon and a ring of dummy pattern surrounding the array region. Preferably, the ring of dummy pattern includes a plurality of magnetic tunneling junctions (MTJs) and a ring of metal interconnect pattern overlapping the MTJs and surrounding the array region. The semiconductor device further includes a gap between the array region and the ring of dummy pattern.

Abstract: A manufacturing method includes providing a first substrate including a circuit layer and an electronic element disposed on the circuit layer, providing a second substrate, bonding the first substrate and the second substrate to form an electronic module, cutting the electronic module, forming a wire on a first surface exposed after cutting the electronic module and on a second surface of the electronic module, wherein the first surface is adjacent to the second surface and the wire is electrically connected to the circuit layer, and disposing a driving element on the second surface of the electronic module to be electrically connected to the wire.

Abstract: An electronic device is provided, the electronic device includes a driving substrate (13), the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, and a plurality of disc-shaped electronic components, at least one disc-shaped electronic component is disposed in at least one circular groove, an alignment element positioned on a top surface of the at least one disc-shaped electronic component, a diameter of the at least one disc-shaped electronic component is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the disc-shaped electronic component and the rectangular groove satisfy the condition of (R+r)/2>(w2+H2)1/2.