Patents by Inventor Chun-Lang Chen
Chun-Lang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240053668Abstract: The present disclosure provides a method of manufacturing a photomask. The method includes: forming a multilayer structure on a substrate; forming a capping layer on the multilayer structure, the capping layer including a ruthenium oxide (RuO) layer; forming a light-absorbing structure on the capping layer; forming a hard mask on the light-absorbing structure; etching the light-absorbing structure to form a recess by using the hard mask as an etch mask, wherein the recess exposes a top portion of the capping layer; and performing a treatment to convert the top portion into a ruthenium nitride (RuN) layer.Type: ApplicationFiled: August 9, 2022Publication date: February 15, 2024Inventors: CHUN-LANG CHEN, CHUNG-YANG HUANG, SHIH-HAO YANG, CHEN-HUI LEE
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Publication number: 20240053674Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A substrate is provided, received or formed. A multilayer structure is formed over the substrate, wherein the multilayer structure includes a plurality of silicon layers and a plurality of molybdenum layers alternately arranged with the plurality of silicon layers. A nitride layer and an oxide layer are formed over the multilayer structure, wherein a total thickness of the nitride layer and a topmost silicon layer is substantially equal to a thickness of each of all other silicon layers of the plurality of silicon layers. A patterned layer is formed over the nitride layer. A semiconductor structure thereof is also provided.Type: ApplicationFiled: August 9, 2022Publication date: February 15, 2024Inventors: CHUN-LANG CHEN, SHIH-HAO YANG, CHIH-CHIANG TU
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Patent number: 11854861Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.Type: GrantFiled: April 26, 2019Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Publication number: 20230360914Abstract: A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.Type: ApplicationFiled: July 21, 2023Publication date: November 9, 2023Inventors: Chun-Lang CHEN, Chih-Chiang TU
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Patent number: 11735421Abstract: A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.Type: GrantFiled: February 8, 2022Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Lang Chen, Chih-Chiang Tu
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Publication number: 20230259014Abstract: A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.Type: ApplicationFiled: April 27, 2023Publication date: August 17, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
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Patent number: 11662656Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.Type: GrantFiled: November 23, 2020Date of Patent: May 30, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
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Patent number: 11531263Abstract: Some embodiments relate to photomask for mask patterning. The photomask includes a transparent layer comprising quartz, and a molybdenum silicide (MoSi) layer overlying the transparent layer. A first shielding layer overlies the MoSi layer and has a first thickness and a first optical density. A second shielding layer overlies the first shielding layer and has a second thickness and a second optical density. The second thickness is less than one third of the first thickness, and the second optical density is less than one fourth of the first optical density. An overall optical density of the first and second shielding layers is at least 1.8.Type: GrantFiled: August 18, 2021Date of Patent: December 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Publication number: 20220165572Abstract: A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Inventors: Chun-Lang CHEN, Chih-Chiang TU
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Patent number: 11270884Abstract: A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).Type: GrantFiled: January 27, 2020Date of Patent: March 8, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Lang Chen, Chih-Chiang Tu
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Publication number: 20210373433Abstract: Some embodiments relate to photomask for mask patterning. The photomask includes a transparent layer comprising quartz, and a molybdenum silicide (MoSi) layer overlying the transparent layer. A first shielding layer overlies the MoSi layer and has a first thickness and a first optical density. A second shielding layer overlies the first shielding layer and has a second thickness and a second optical density. The second thickness is less than one third of the first thickness, and the second optical density is less than one fourth of the first optical density. An overall optical density of the first and second shielding layers is at least 1.8.Type: ApplicationFiled: August 18, 2021Publication date: December 2, 2021Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Patent number: 11099476Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.Type: GrantFiled: May 21, 2020Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Patent number: 11086211Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.Type: GrantFiled: March 30, 2018Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Hao Yang, Chih-Chiang Tu, Chun-Lang Chen
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Publication number: 20210103210Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.Type: ApplicationFiled: November 23, 2020Publication date: April 8, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
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Patent number: 10969682Abstract: An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.Type: GrantFiled: June 26, 2020Date of Patent: April 6, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzung-Shiun Liu, Chun-Lang Chen, Ching-Yueh Chen
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Patent number: 10852634Abstract: A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.Type: GrantFiled: July 8, 2019Date of Patent: December 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Lang Chen, Chih-Chiang Tu, Shih-Hao Yang
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Patent number: 10845698Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.Type: GrantFiled: May 30, 2018Date of Patent: November 24, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
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Publication number: 20200326622Abstract: An apparatus includes a developing tank, and the developing tank has a sidewall and a bottom. A fluid manifold is adjacent the bottom of the developing tank. The fluid manifold includes a plurality of holes and a plurality of valves. Developer and rinsing fluid flow through the plurality of holes. Each of the plurality of the valves corresponds to a different hole of the plurality of holes, and the plurality of valves allow the developer and the rinsing fluid to flow through the holes when open and prevent the developer and the flowing liquid from flowing through the holes when closed. The developer flows through a developer inlet to the fluid manifold. The rinsing fluid flows through a rinsing fluid inlet to the fluid manifold. A controller is configured to individually control opening and closing of each of the plurality of valves.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Inventors: Tzung-Shiun LIU, Chun-Lang CHEN, Ching-Yueh CHEN
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Publication number: 20200285143Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.Type: ApplicationFiled: May 21, 2020Publication date: September 10, 2020Inventors: Chih-Chiang Tu, Chun-Lang Chen
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Patent number: 10698313Abstract: An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.Type: GrantFiled: November 2, 2018Date of Patent: June 30, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzung-Shiun Liu, Chun-Lang Chen, Ching-Yueh Chen