Abstract: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.

Abstract: A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough.

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract: A photovoltaic cell texturization method is disclosed. The method includes providing a photovoltaic cell substrate; and texturizing a surface of the photovoltaic cell substrate. The texturizing implements a nanoimprint lithography process to expose a portion of the surface of the photovoltaic cell substrate. An etching process is performed on the exposed portion of the exposed portion of the surface of the photovoltaic cell substrate.

Abstract: A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.

Abstract: A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit.

Abstract: A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.

Abstract: An illuminating device includes a substrate, an illuminating element, at least one barricade and at least one cover layer. The illuminating element is disposed on the substrate. The barricade is protruded from a surface of the substrate and disposed around the illuminating element continuously or discontinuously to form a first accommodating area. The cover layer is disposed in the first accommodating area for covering the illuminating element.

Abstract: A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.

Abstract: A novel composite layer structure method which is suitable for reducing post-exposure delay (PED) effects associated with fabricating a photolithography reticle or mask and eliminating or at least minimizing variations between intended and realized critical dimension values for a circuit pattern fabricated on the reticle or mask. The method includes providing a mask blank having a metal layer, providing a photoresist layer on the metal layer of the mask blank, providing a protective layer on the photoresist layer and photo-cracking the photoresist layer in the desired circuit pattern typically by electron beam exposure. During subsequent post-exposure delay periods, the protective layer prevents or minimizes Q-time narrowing of the photo-cracked photoresist, and consequently, prevents or minimizes narrowing of the critical dimension of a circuit pattern etched in the metal layer according to the width of the photo-cracked photoresist.

Abstract: A lithographic apparatus for forming a patterned resist layer and a method for forming a microelectronic product both employ a lithographic exposure tool controller designed to: (1) receive input data for at least one non-environmental variable that influences an exposure dose when forming a patterned resist layer from a blanket resist layer while employing a lithographic exposure tool; and (2) determine the exposure dose for forming the patterned resist layer from the blanket resist layer while employing the input data. The apparatus and method provide for forming the microelectronic product with enhanced dimensional control.

Abstract: A novel composite layer structure method which is suitable for reducing post-exposure delay (PED) effects associated with fabricating a photolithography reticle or mask and eliminating or at least minimizing variations between intended and realized critical dimension values for a circuit pattern fabricated on the reticle or mask. The method includes providing a mask blank having a metal layer, providing a photoresist layer on the metal layer of the mask blank, providing a protective layer on the photoresist layer and photo-cracking the photoresist layer in the desired circuit pattern typically by electron beam exposure. During subsequent post-exposure delay periods, the protective layer prevents or minimizes Q-time narrowing of the photo-cracked photoresist, and consequently, prevents or minimizes narrowing of the critical dimension of a circuit pattern etched in the metal layer according to the width of the photo-cracked photoresist.

Abstract: A lithographic apparatus for forming a patterned resist layer and a method for forming a microelectronic product both employ a lithographic exposure tool controller designed to: (1) receive input data for at least one non-environmental variable that influences an exposure dose when forming a patterned resist layer from a blanket resist layer while employing a lithographic exposure tool; and (2) determine the exposure dose for forming the patterned resist layer from the blanket resist layer while employing the input data. The apparatus and method provide for forming the microelectronic product with enhanced dimensional control.

Abstract: A light-effect producing candle for illuminating and generating altering light-effect includes a light-generating means located inside a transparent candle. The light-generating means includes a plurality of light-generating devices of different colors. An optical fiber is provided to receive and transmit photo signal generated by a lighted wick, and to activate the light-generating devices to produce flickering light which may emanate through the candle for producing flickering and altering light effect around the candle.

Abstract: An auxiliary handlebar is mounted at one end of a bicycle handlebar and is composed of a main body, a sleeve fitted over the main body, and a cap fastened with the top end of the main body. The main body is fastened at the bottom end thereof with a fastening mount which is engaged with the one end of the bicycle handlebar. The main body is provided at the top end thereof with an outer threaded portion and a recessed portion. The sleeve is provided at the top end thereof with a protrusion and is rotatably fitted over the main body such that the protrusion is movably received in the recessed portion of the main body. The cap is provided with an inner threaded portion and fastened with the top end of the main body such that the inner threaded portion of the cap is engaged with the outer threaded of the top end of the main body.