Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.

Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.

Abstract: A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).

Abstract: A mask for reflecting an electromagnetic radiation includes a substrate, a reflective multi-layered stack over a surface of the substrate, a metal capping layer over the reflective multi-layered stack, a metal silicide buffer layer over the metal capping layer, and an optical absorber pattern over the metal silicide buffer layer.

Abstract: A method of fabricating a mask blank includes depositing a reflective multilayer over a substrate, depositing a capping layer over the reflective multilayer, depositing an absorber layer over the capping layer, and depositing an anti-reflective coating (ARC) layer over the absorber layer. The ARC layer is a single material film.

Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.

Abstract: A phase shift mask (PSM) includes a light transmitting substrate. The PSM further includes a phase shifter over the light transmitting substrate, wherein the phase shifter includes a plurality of semiconductor layers and a plurality of dielectric layers stacked in an alternating fashion.

Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

Abstract: A method of fabricating a photomask includes depositing a phase shifter over a light transmitting substrate, depositing a shading layer over the light transmitting substrate, and removing a portion of the shading layer and a portion of the phase shifter to expose a portion of the light transmitting substrate. The phase shifter having at least two semiconductor layers and at least two dielectric layers.

Abstract: An apparatus includes a developing tank and a fluid manifold in the bottom of the developing tank. The fluid manifold includes a plurality of holes through which developer flows and a plurality of valves corresponding to the plurality of holes. The valves allow developer to flow through the holes when open and prevent developer from flowing through the holes when closed. A trench surrounds the fluid manifold through which developer is drained from the developing tank. A controller is configured to control opening and closing of the valves. In an embodiment, the apparatus includes a clamping mechanism configured to insert the substrate into and remove the substrate from the developing tank.

Abstract: Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.

Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

Abstract: A method of fabricating a mask blank includes depositing a reflective multilayer over a substrate, depositing a capping layer over the reflective multilayer, depositing an absorber layer over the capping layer, and depositing an anti-reflective coating (ARC) layer over the absorber layer. The ARC layer is a single material film.

Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.

Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.

Abstract: An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.

Abstract: In some embodiments, a patterned photomask has a plurality of shielding layers. In some embodiments, a photomask for mask patterning is described. The photomask includes a phase shift layer overlying a transparent layer. The photomask also includes a first shielding layer overlying the phase shift layer. The first shielding layer has a first thickness and a first optical density. The photomask further includes a second shielding layer overlying the first shielding layer. The second shielding layer has a second thickness and a second optical density. The second thickness is less that than the first thickness and the second optical density is less than the first optical density.

Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.

Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.

Abstract: A method includes depositing a first material layer over a substrate; and depositing a graphene layer over the first material layer, thereby forming a first assembly. The method further includes attaching a carrier to the graphene layer; removing the substrate from the first assembly; and removing the first material layer from the first assembly.