Abstract: A device for adjusting the degree of tightness is provided. The device is for a first strap element and a second strap element. The device includes an outer adjustment element, an inner adjustment element, and an intermediate adjustment element. The inner adjustment element is disposed inside the outer adjustment element. The intermediate adjustment element is disposed between the inner adjustment element and the outer adjustment element. The first strap element includes a first hollow region, and the second strap element includes a second hollow region. The inner adjustment element passes through the first hollow region and the second hollow region to adjust the degree of overlapping of the first hollow region and the second hollow region.

Abstract: An article (100) for a display device includes a diffraction grating film (102), a first optically clear adhesive layer (120), and a second optically clear adhesive layer (130). The diffraction grating film includes a base layer (104) and a plurality of microstructures (106) projecting from the base layer. The base layer defines a non-structured surface of the diffraction grating film and the plurality of microstructures define a structured surface of the diffraction grating film opposite to the non-structured surface. The first optically clear adhesive layer is disposed on the structured surface of the diffraction grating film. The second optically clear adhesive layer is disposed on the non-structured surface of the diffraction grating film.

Abstract: A hinge is provided. The hinge includes a first connection element, a second connection element, a first elastic element, and a second elastic element. The second connection element is connected to the first connection element. The first elastic element is connected to the first connection element. The second elastic element is connected to the first elastic element. The first elastic element drives the second elastic element to rotate relative to the second connection element. The first elastic element is rotatable between a first limit position and a second limit position. When the first elastic element is in the first limit position, the second elastic element is compressed.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A headband adjustment structure includes a base, a wearing unit, a rotary adjusting assembly, a linkage member and an elastic element. The wearing unit includes a first end portion and a second end portion that overlap with each other. The first end portion and the second end portion are movably located in the base to define an adjustable accommodation space. The rotary adjusting assembly is pivotally located within the base, and provided with a gear body meshed with a first toothed rack of the first end portion and a second toothed rack of the second end portion so as to simultaneously move the first end portion and the second end portion in opposite directions for adjusting the adjustable accommodation space. The linkage member is connected to the rotary adjusting assembly. The elastic element abutting against the linkage member and the base, respectively.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD layer on the stop layer; performing a first etching process to remove the second IMD layer and the stop layer; performing a second etching process to remove part of the top electrode; and forming a metal interconnection to connect to the top electrode.

Abstract: A method for adjusting accompaniment music is disclosed. The method transposes the musical key of at least one section of the accompaniment music such that a song will have different musical key transpositions for different sections of the accompaniment music, so that singers whose vocal ranges are narrow can sing songs after the adjustment.

Abstract: A method for a clean procedure during manufacturing a semiconductor device, includes: providing a patterned sacrificial gate structure including a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed; performing a first etching process to remove the sacrificial layer; and performing a hydrophilic treatment and a hydrophobic treatment to remove a residue of the sacrificial layer.

Abstract: A head-mounted display includes a face-abutting frame, a first adjustable structure, a second adjustable structure and a display module. The face-abutting frame has a first side and a second side opposite to each other. The first side abuts against a face of a user. The face-abutting frame defines a space corresponding to eyes of the user. The first adjustable structure connects with the second side. The second adjustable structure connects with the second side and defines the space with the first adjustable structure. The second adjustable structure movably and mechanically connects with the first adjustable structure. The display module corresponds to the space and movably and mechanically connects with the first adjustable structure. The first and the second adjustable structures can move close to or away from each other. The display module and the first adjustable structure can move close to or away from each other.

Abstract: A head-mounted display includes a display device, a connecting structure and a head abutting portion. The connecting structure is in a shape of strip. The connecting structure has two opposite ends. The ends are respectively connected with the display device. The connecting structure and the display device define an accommodation space. The accommodation space is configured to accommodate a head of a user. The head abutting portion is pivotally connected with the connecting structure. The head abutting portion is at least partially located between the connecting structure and the display device. The head abutting portion is configured to abut against the head of the user.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate and a top electrode on the MTJ; forming a first inter-metal dielectric (IMD) layer around the MTJ and the top electrode; forming a stop layer on the first IMD layer; forming a second IMD layer on the stop layer; performing a first etching process to remove the second IMD layer and the stop layer; performing a second etching process to remove part of the top electrode; and forming a metal interconnection to connect to the top electrode.

Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Abstract: A manufacturing method of a semiconductor device includes the following steps. First patterned structures are formed on a substrate. Each of the first patterned structures includes a first semiconductor pattern and a first bottom protection pattern disposed between the first semiconductor pattern and the substrate. A first protection layer is formed on the first patterned structures and the substrate. A part of the first protection layer is located between the first patterned structures. A first opening is formed in the first protection layer between the first patterned structures. The first opening penetrates the first protection layer and exposes a part of the substrate. A first etching process is performed after forming the first opening. A part of the substrate under the first patterned structures is removed by the first etching process for suspending at least a part of each of the first patterned structures above the substrate.

Abstract: A hinge is provided. The hinge includes a first plate, a second plate, a third plate, a shaft, a first elastic element, and a second elastic element. The second plate is connected to the first plate. The third plate is disposed on the second plate. The shaft is connected to the first plate and the second plate. The first elastic element surrounds the shaft. The second elastic element is connected to the second plate and the third plate. The second plate is rotatable around the shaft via the first elastic element. The second plate is movable relative to the third plate via the second elastic element.

Abstract: A device for adjusting interpupillary distance is provided. The device for adjusting interpupillary distance includes an adjustment bottom, a housing, and an adjustment support. The housing is disposed on the adjustment bottom. The housing includes a base, a holder, and a deformation part disposed between the base and the holder. The holder moves relative to the base via the deformation part. The adjustment support is connected to the holder and the adjustment bottom.

Abstract: A hinge is provided. The hinge includes a first connection element, a second connection element, a first elastic element, and a second elastic element. The second connection element is connected to the first connection element. The first elastic element is connected to the first connection element. The second elastic element is connected to the first elastic element. The first elastic element drives the second elastic element to rotate relative to the second connection element. The first elastic element is rotatable between a first limit position and a second limit position. When the first elastic element is in the first limit position, the second elastic element is compressed.

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Abstract: A wearable device includes a frame, two feet, and two pivoting modules. Each of the pivoting modules includes a first bracket fixedly connected to the frame, and a second bracket fixedly connected to one of the feet and pivotally coupled to the first bracket. The second bracket includes a positioning member and an inserting member. The positioning member is located in the first bracket, and the positioning member includes a plurality of slots. The inserting member is switchably inserted into one of the slots for adjusting a maximum outreaching volume from the frame to the feet.

Abstract: A hinge is provided. The hinge includes a first plate, a second plate, a third plate, a shaft, a first elastic element, and a second elastic element. The second plate is connected to the first plate. The third plate is disposed on the second plate. The shaft is connected to the first plate and the second plate. The first elastic element surrounds the shaft. The second elastic element is connected to the second plate and the third plate. The second plate is rotatable around the shaft via the first elastic element. The second plate is movable relative to the third plate via the second elastic element.