Abstract: A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)?1.

Abstract: A key is provided. The key includes a substrate, a keycap member, a first balance rod and a second balance rod. The keycap member is movably disposed on the substrate and includes two short lateral sides and two long lateral sides. The first balance rod is disposed between the keycap member and the substrate. An extended direction of the first balance rod is parallel to profile lines of the long lateral sides, and the first balance rod is connected to one of the two long lateral sides and the substrate. The second balance rod is disposed between the keycap member and the substrate. An extended direction of the second balance rod is parallel to profile lines of the short lateral sides, and the second balance rod is connected to the short lateral sides and the substrate.

Abstract: According to one exemplary embodiment, a method for analyzing root causes applies an application-level dependency discovery and anomaly detection to find application-level dependencies in one or more virtual machines (VMs), and generate an application-level topology with anomaly, and then transfers the application-level topology with anomaly to a VM-level dependency, and transfers the VM-level dependency to a physical machine level (PM-level) dependency via a physical and virtual resource mapping, and eventually generates a group of event sets. A prioritized event list is generated by prioritizing the group of event sets.

Abstract: The signal line structure is disposed between a gate driver and a display area of a display. The signal line structure includes a substrate, first metal layers, a first insulation layer, second metal layers, a second insulation layer and third metal layers. The first metal layers are arranged in parallel and toward a first direction in the substrate. The first insulation layer is disposed in the substrate and covers the first metal layers. The second metal layers are disposed on the positions of the first insulation layer corresponding to the first metal layers. The second insulation layer is disposed on the second metal layers and the first insulation layer. The third metal layers are disposed on the positions corresponding to the second metal layers in the second insulation layer. The distance between two adjacent second metal layers is less than that between two adjacent first metal layers.

Abstract: Systems, methods, and computer storage media having computer-executable instructions embodied thereon that maintain a targetable user inventory for digital advertising. In embodiments, a request is made for user data associated with a user identification. If the user data or user identification is not available, a list of alternative user identifications is ranked according to various criteria based on identification signals. A match is selected from the list of alternative user identifications and user data associated with the alternative user identification is communicated in response to the request.

Abstract: Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.

Abstract: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.

Abstract: Virus-like particles (VLPs) of mammalian-hosted viruses, such as SARS-CoV and influenza viruses, have been recombinantly produced from Vero cells. The VLPs closely emulate the exterior of authentic virus particles and are highly immunogenic. They can elicit not only humoral but also cellular immune responses in a mammal. Compositions and methods related to the VLPs are also described.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Abstract: A flexible display and a controlling method thereof are provided. The flexible display includes a plurality of pressure sensors, a display unit and a processing unit, wherein the processing unit is connected to the pressure sensors and the display unit. The processing unit obtains pressure values from each of the pressure sensors within a time unit and generates a pressure area and a pressure variance according to the pressure values from each of the pressure sensors. The processing unit further determines a display mode of the display unit according to the pressure area and the pressure variance. Therefore, the flexible display is capable of providing several kinds of display mode only based on the equipped pressure sensors.

Abstract: An exemplary driving substrate includes a substrate, a plurality of first and second signal transmission lines, a first insulation layer and a plurality of switch devices. The first signal transmission lines are disposed on the substrate, and each includes a first line segment(s) and a first connecting segment(s). The first insulation layer is disposed between each first line segment and each first connecting segment, and each first connecting segment is electrically connected to the adjacent first line segment(s) through an opening(s) of the first insulation layer. The second signal transmission lines are disposed on the substrate and electrically insulated and intersected with the first signal transmission lines thereby defining a plurality of pixel regions on the substrate. The switch devices are respectively disposed in the pixel regions, and each is electrically connected to corresponding first and second signal transmission lines. The driving substrate has better reliability.

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protru

Abstract: A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Abstract: A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

Abstract: A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.

Abstract: A device for generating depth information includes a plurality of light sources, an image capture unit, a control unit, and a processing unit. Each light source of the plurality of light sources emits a corresponding intensity light. The control unit controls the each light source of the plurality of light sources to emit the corresponding intensity light in turn, and controls the image capture unit to capture a plurality of images corresponding to the plurality of light sources. The processing unit generates a plurality of depth information corresponding to the plurality of light sources according to the plurality of images corresponding to the plurality of light sources and a background image after the image capture unit captures the plurality of images corresponding to the plurality of light sources and the background image.

Abstract: A planar-part-based toy assembly set includes planar parts that have different shapes and are made by stamping a planar material board. The planar parts include a body piece and a limb piece. The body piece has a slotted ring for coupling with the limb piece. The slotted ring has a cutting slot, a narrow section and, a wide section. The limb piece has a closed ring, or a slotted ring as stated above. The closed ring of the limb piece can pass through the cutting slot of the slotted ring of the body piece and be mounted around the narrow or wide section of the slotted ring. When the closed ring is around the narrow section, the limb piece can freely swing, and when the closed ring is around the wide section, the limb piece is fixed at a specific angle, which can be later adjusted by the player.