Abstract: A light-emitting diode device comprising: a substrate; a contact light-emitting diode unit formed on the substrate, wherein the contact light-emitting diode unit having a first area; a plurality of light-emitting diode units formed on the substrate wherein one of the plurality of the light-emitting diode units is adjacent to the contact light-emitting diode unit and has a second area and wherein the first area is larger than the second area; a plurality of conductive connecting structures connected to the plurality of the light-emitting diode units and the contact light-emitting diode unit; and a first electrode pad formed on the contact light-emitting diode unit.

Abstract: A display and a gate driver are disclosed herein, in which the gate driver includes a number of gate driving units, and each of the gate driving units includes a control circuit, a boost circuit, a driver output circuit and a voltage stabilized circuit. The control circuit is electrically connected to a previous gate driving unit and a next gate driving unit. The boost circuit is electrically connected to the control circuit for driving the next gate driving unit. The driver output circuit is electrically connected to the boost circuit and a pixel array for driving at least one scan line in the pixel array. The voltage stabilizing circuit is electrically connected to the boost circuit and the driver output circuit.

Abstract: Disclosed herein is an electrostatic discharge protection structure which includes a signal line, a thin-film transistor and a shunt wire. The thin-film transistor includes a gate electrode, a metal-oxide semiconductor layer, a source electrode and a drain electrode. The first metal-oxide semiconductor layer is disposed above the first gate electrode. The metal-oxide semiconductor layer has a channel region characterized in having a width/length ratio of less than 1. The source electrode is equipotentially connected to the gate electrode. The shunt wire is electrically connected to the drain electrode. When the signal line receives a voltage surge of greater than a predetermined magnitude, the voltage surge is shunted through the thin-film transistor to the shunt wire.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: A touch panel including a substrate, at least one touch-sensing unit, at least one connecting pad, at least a testing line, at least one ESD protection circuit, and a first isolation layer is provided. The touch-sensing unit is disposed on the substrate. The connecting pad is disposed on the substrate and electrically connected to the touch-sensing unit. The testing line is disposed on the substrate, electrically connected to the connecting pad, and extends to at least an edge of the substrate. The ESD protection circuit is disposed in the edge of the substrate and electrically connected to a ground voltage, wherein a vertical projection of the testing line to the substrate and that of the ESD protection circuit to the substrate is at least partially overlapped. The first isolation layer is disposed between the testing line and the ESD protection circuit.

Abstract: A thin film transistor (TFT) is provided, which includes a gate, a semiconductor layer, an insulation layer, a source and a drain. The semiconductor layer has a first end and a second end opposite to the first end. The insulation layer is disposed between the gate and the semiconductor layer. The source clamps the first end of the semiconductor layer and the drain clamps the second end of the semiconductor layer.

Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.

Abstract: A display device includes a transparent active element array substrate and a color display layer. The transparent active element array substrate has a first surface and a second surface opposite to the first surface. The color display layer disposed on the first surface of the transparent active element array substrate.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: A driving circuit for driving a fan with a plurality of operational modes includes an initiation module for generating a switch signal according to a feedback signal, a control module coupled to the initiation module for utilizing a pulse frequency modulation technique to generate a control signal according to the switch signal and a predetermined comparison signal, so as to drive the fan for a rotational operation, and a feedback module coupled to the fan for generating the feedback signal according to a conduction result of the fan. The rotational operation includes the plurality of operational modes, and the fan is switched between the plurality of operational modes according to different conduction results of the fan.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Abstract: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: An optical substrate having a structured light output surface that comprises rows of laterally arranged snaking, wavy or meandering longitudinal prism structures. The prism structures at the light output surface may be viewed as comprising rows of laterally meandering longitudinal prisms and/or sections of curved segments coupled end-to-end to form the overall meandering longitudinal prism structures. The laterally meandering rows of longitudinal prism structures are arranged in parallel laterally (side-by-side), defining parallel peaks and valleys (a facet is defined between each adjacent peak and valley). In one embodiment, the lateral waviness is regular with a constant or variable wavelength and/or wave amplitude (or extent of lateral deformation). The lateral waviness may generally follow a sinusoidal profile, or other curved profile.

Abstract: A thin film transistor (TFT) includes a gate, a semiconductor layer, an insulating layer, a source, a drain, and a current reduction layer. The insulating layer is disposed between the gate and the semiconductor layer. The source is connected to the semiconductor layer. The drain is connected to the semiconductor layer, and the source and the drain are separated from each other. The current reduction layer has a first part and a second part. The first part is disposed between the semiconductor layer and at least a part of the source, and the second part is disposed between the semiconductor layer and at least a part of the drain.

Abstract: The present invention provides for a system for converting CO2 and H2 to one or more biologically derived compounds. In some embodiments, the system comprises a host cell comprising one or more nucleic acids encoding genes for a recombinant surface display protein which is capable of tethering an electrocatalyst molecule, such as a cobalt(II) complex supported by tetradentate polypyridyl ligand 2-bis(2-pyridyl)(methoxy)methyl-6-pyridylpyridine (PY4), and enzymes for synthesizing a biologically derived compound, such as an alkane, alcohol, fatty acid, ester, or isoprenoid.

Abstract: To provide contextual user assistance for cloud services, an assistance panel is presented as part of the cloud service portal and is available in the user interface of the portal. The assistance panel can provide contextual assistance based on current user information, including task or error messages, as well as product name and user role. The assistance panel provides assistance functions including a search function, a browse syndicated community content function, and a post to a community forum function within the cloud service portal and can transform to accommodate the functions. For the browse function, the assistance panel uses the current user information to dynamically update a list of syndicated community content that can potentially match the user's needs as the user navigates to different pages presented in the portal. A content curator tool can be used to control and prioritize the content surfaced by the browse function.