Abstract: The present disclosure provides various molecular constructs having a targeting element and an effector element. Methods for treating various diseases using such molecular constructs are also disclosed.

Abstract: A diode includes a substrate, a first insulating layer, a second insulating layer, a well, a deep doped region, a first doped region, and a second doped region. The first insulating layer is disposed on the substrate. The second insulating layer is disposed on the substrate, and defines a cell region with the first insulating layer. The well is disposed on the substrate and beneath the cell region. The deep doped region is disposed in the well and beneath the cell region. The first doped region is disposed in the cell region and on the deep doped region. The second doped region is disposed adjacent to the first doped region. The second doped region is disposed on the deep doped region, and is electrically isolated from the well through the deep doped region and the first doped region.

Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

Abstract: An electroluminescent (EL) device is disclosed. An optically reflective concave structure includes a first surface and a second surface that lies at an angle relative to the first surface, wherein at least the first and second surfaces are optically reflective. One or more functional layers include a light emitting layer, disposed over the surfaces of the optically reflective concave structure, wherein at least one electroluminescent area of the light emitting layer is defined on the first surface. Especially, the ratio between the width of the first surface and the thickness of the one or more functional layers in the optically reflective concave structure is smaller than a constant value.

Abstract: An electronic device with a fold mode and an unfold mode includes a display module and an input module. The display module includes a first connecting component, a second connecting component and a flexible displaying panel. The second connecting component rotates relative to the first connecting component via a first direction to form as the fold mode or the unfold mode. The flexible displaying panel is disposed on the first connecting component and the second connecting component. The flexible displaying panel is bent to be U-shaped when the display module is formed as the fold mode. The flexible displaying panel is flat when the display module is formed as the unfold mode, and a planar normal vector points toward a second direction. The input module is rotatably connected to the display module via a third direction.

Abstract: The present invention is related to a three-dimensional graphene oxide microstructure and making method of thereof. First, a photoreactive agent is added into a graphene oxide solution, wherein the photoreactive agent is a photoreactivator in a nonlinear optical method. Then, the photoreactivator in the graphene oxide solution is activated by a beam emitted from an excitation module to produce singlet oxygen with high activity. Finally, the graphene oxide is activated by the singlet oxygen for an unpaired electron of the graphene oxide covalently bonding with another graphene oxide to form a three-dimensional graphene oxide microstructure. Therefore, two-dimensional graphene oxides are efficiently cross-linked with each other to form a three-dimensional graphene oxide microstructure by a nonlinear optical technique of an ultrafast laser system so as to apply to the development of all electronic and optical components.

Abstract: The present disclosure provides various molecular constructs having a targeting element and an effector element. Methods for treating various diseases using such molecular constructs are also disclosed.

Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.

Abstract: An ESD protection circuit is cooperated with a high-frequency circuit and includes a silicon-controlled rectifier element and an inductive element. The silicon-controlled rectifier element is formed by the sequential connection of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material. The silicon-controlled rectifier element has a first end and a second end, and the first end is electrically coupled with the first P-type semiconductor material while the second end is electrically coupled with the second N-type semiconductor material. One end of the inductive element is electrically coupled with the first end and the other end thereof is electrically coupled with the first N-type semiconductor material, or one end of the inductive element is electrically coupled with the second end and the other end thereof is electrically coupled with the second P-type semiconductor material.

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bondi

Abstract: Provided is the pixel circuit for active matrix display apparatus and the driving method thereof, which is controlled by digital signal. The pre-charge pixel voltage is controlled and discharged by controlling the resistor and transistors, so that the desired grey scale is generated. The pixel circuit includes: a first switch, a second switch, a third switch, an energy storage device and resistor. By controlling the third switch, the first end of the energy storage device is charged to the voltage of the second source. The first switch and the second switch are controlled to switch on, so that the first end of the energy storage device discharging to the first source. The second switch switches off when the first end of the energy storage device reaches the desired pixel voltage.

Abstract: A silicon controlled rectifier includes a substrate, a well, a deep doped region, a first doped region, a second doped region, a third doped region, and a fourth doped region. The well is disposed on the substrate and underneath a cell region. The deep doped region is disposed in the well. The first doped region has a first conductivity type, and is disposed in the well. The second doped region and third doped region have the first conductivity type and are disposed on the deep doped region. The fourth doped region has a second conductivity type, and is disposed between the second doped region and the third doped region. The fourth doped region is disposed on the deep doped region, and is electrically isolated from the well through the deep doped region, the second doped region, and the third doped region.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract: An optical element includes a lens and a light diffusion layer formed on the lens. The lens includes a light incident face and a light emerging face. The light emerging face includes a concave face opposite to the light incident face and a convex face surrounding the concave face. The convex face is covered by the light diffusion layer. The concave face is exposed outside the light diffusion layer. A method for manufacturing the optical element is also disclosed.

Abstract: A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: A photomask and method for fabricating an integrated circuit is provided. The photomask includes a plurality of main features, enclosed in at least one first region and at least one second region, wherein the first region comprises single the main feature and the second region comprises multiple the main features; and a plurality of assistant features disposed between the first region and the second region, or between the second regions. The photomask enhances the accuracy of the critical dimension and facilitate fabricating an integrated circuit.