Abstract: Certain aspects of the present disclosure provide methods and apparatus for amplifying an input signal. One example apparatus is a differential amplifier that includes a positive input node, a negative input node, a positive output node, a negative output node, a positive input transistor having a gate coupled to the positive input node and having a drain coupled to the negative output node, a negative input transistor having a gate coupled to the negative input node and having a drain coupled to the positive output node, a first common-gate amplifier having an output coupled to the negative output node, a second common-gate amplifier having an output coupled to the positive output node, a first capacitive element coupled between the negative input node and an input of the first common-gate amplifier, and a second capacitive element coupled between the positive input node and an input of the second common-gate amplifier.

Abstract: An electronic device having a peripheral area and a non-peripheral area adjacent to the peripheral area is provided. The electronic device includes a flexible substrate, a first conductive layer disposed on the flexible substrate and disposed in the peripheral area and the non-peripheral area, an organic layer disposed in the non-peripheral area and on the first conductive layer, a second conductive layer disposed on the first conductive layer, and an organic structure disposed between the first conductive layer and the second conductive layer in the peripheral area. The organic layer and the organic structure are the same material layer.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Abstract: The present invention relates to a method and a kit, a computer-implemented method and a system for in vitro predicting survival time of an individual with bladder cancer after surgery from an individual's biological sample. Expression levels of a target gene combination of in vitro aggressive bladder cancer specimen of a patient are detected, and the target gene combination includes at least two of PPT2, ARMH4, P4HB, SLC1A6 and ARID3A, a fragment, a homologue, a variant and a derivative thereof. Next, the expression levels are respectively compared with the reference expression levels of a reference database, and converted to a risk score sum, thereby predicting an averaged survival time of a patient having aggressive bladder cancer after surgery, and being beneficially applied to a kit and a computer-implemented method for in vitro predicting survival time of patient with most aggressive types of bladder cancer after surgery.

Abstract: A compound for measurement of thiopurine pathway directed systems imaging and therapy including a chelator and a thiopurine ligand is provided. A method of synthesizing the compound is also provided, and the compound may be further prepared in pharmaceutical formulations or kits for therapy or molecular imaging.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A method comprises conveying a downhole tool in a production tubing within a casing that is around a wall of a wellbore formed in a subsurface formation, wherein cement is placed in an annulus defined between the casing and the wall of the wellbore. The downhole tool includes at least one unipole receiver and a transmitter that comprises at least one of a unipole transmitter and a monopole transmitter. The transmitter and receiver are mounted on a rotatable portion of the downhole tool. The method includes performing the following operations at at least two azimuthal positions, emitting an acoustic transmission outward toward the cement and detecting an acoustic response that is in response to the acoustic transmission propagating through the production tubing and the casing and into the cement. The acoustic response includes casing extensional waves, casing non-extensional waves, and tubing waves. The method includes evaluating the cement based on the casing extensional waves.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate, and the fin structure includes first semiconductor material layers and second semiconductor material layers alternately stacked. The method also includes forming a dummy gate structure across the fin structure and forming a gate spacer on a sidewall of the dummy gate structure. The method also includes partially oxidizing the gate spacer to form an oxide layer and removing the oxide layer to form a modified gate spacer. The method also includes removing the first semiconductor material layers to form gaps and forming a gate structure in the gaps to wrap around the second semiconductor material layers and over the second semiconductor material layers to cover the modified gate spacer.

Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a fixed part, a movable part, a driving assembly, and a sensing assembly. The movable part moves relative to the fixed part. The driving assembly drives the movable part to move relative to the fixed part. The sensing assembly senses the movement of the movable part.

Abstract: The disclosure presents processes to determine the direction and magnitude of tubing eccentricity along the length of a tube inserted within a borehole. The tubing can be a wireline, a drill string, a drill pipe, or tubing capable of allowing fluid or other material to flow through it. As borehole operations proceed, the tubing can move toward the side of the borehole. This eccentricity can cause excess wear and tear on the tubing, on the casing of the borehole, or on the inner surface of the subterranean formation. The eccentricity can be measured using acoustic signals that are collected downhole covering the azimuthal angles 0° to 360° at a location in the borehole. The collected signals can be filtered, transformed, and analyzed to estimate the tubing eccentricity. Other processes and systems can use the results to obtain cement bond evaluations through tubing and to determine preventative or restorative actions.

Abstract: The package structure having packaged components within includes a circuit board, multiple packaged light detecting components mounted on the circuit board, a sealing cap being light transmittable, multiple light filtering films mounted on the sealing cap, and a supporting annular wall. The two opposite ends of the supporting annular wall are adhesively bonded to the surfaces of the circuit board and the sealing cap, such that the projection on the circuit board of the light filtering films corresponds the packaged light detecting components. Since the light filtering films have different filtering frequency bands, each packaged light detecting component detects light of different frequency bands in one incident light beam. The package method is simple and stable, effectively lowering the manufacture cost of the light detecting module.

Abstract: An electrocardiogram converting device includes a casing, a first connector, a chest lead connection module, and a limb lead connection module. The casing includes a first surface, a second surface, and a third surface. The first connector is installed on the first surface of the casing, the chest lead connection module is installed on the second surface of the casing, and the limb lead connection module is installed on the third surface of the casing. In addition, the second surface is perpendicular to the third surface, and the first surface is parallel to the third surface, so as to reduce a length and a volume of the electrocardiogram converting device and improve the convenience of electrocardiogram measurement.

Abstract: Methods, systems, and program products are disclosed for implementing acoustic logging and determining wellbore material characteristics. In some embodiments, a method may include determining a polar differential signal for each of one or more pairs of azimuthally offset acoustic measurements within a wellbore. A reference azimuth is identified based, at least in part, on comparing the polar differential signals to a modeled bonding differential signal within a target response window. The method further includes determining differences between an acoustic measurement at the reference azimuth and acoustic measurements at one or more other azimuths and determining a wellbore material condition based, at least in part, on the determined differences.

Abstract: An optical mechanism is provided, including a base module, an optical element, and a ball element. The base module has a frame, a substrate movably disposed in the frame, and an image sensor disposed on the substrate. The optical element is movably connected to the base module, and light propagates through the optical element to the image sensor to generate a digital image. The ball element is disposed between the frame and the substrate, whereby the image sensor and the substrate are movable relative to the frame along a first axis that is perpendicular to an optical axis of the optical element.

Abstract: An electronic device is provided. The electronic device includes a supporting substrate, a flexible substrate disposed on the supporting substrate, a first conductive layer disposed on the flexible substrate, a second conductive layer disposed on the first conductive layer, a plurality of organic elements disposed between the first conductive layer and the second conductive layer, and an opening passing through the supporting substrate and exposing a portion of the flexible substrate. The first conductive layer alternately contacts the second conductive layer and the plurality of organic elements.

Abstract: An acoustic logging tool may comprise a center load carrying pipe, a receiver module connected to the center load carrying pipe, one or more transmitter modules connected to the center load carrying pipe, and one or more mass modules connected to the center load carrying pipe.

Abstract: An acoustic isolator and methods to the same. The acoustic isolator may comprise a body, one or more annular chambers formed inside the body of the acoustic isolator and positioned along a longitudinal axis of the acoustic isolator, an annular groove formed on an outer surface of the body of the acoustic isolator, and a passage disposed between the one or more annular chambers and the annular groove. The method may comprise transmitting an acoustic wave from a transmitter disposed on an acoustic logging tool into a subterranean formation, receiving an acoustic signal from the subterranean formation with a receiver disposed on the acoustic logging tool, and attenuating a second acoustic wave that moves between the transmitter and the receiver and through an acoustic isolator.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.